STF11N65M2
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STMicroelectronics STF11N65M2

Manufacturer No:
STF11N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 7A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF11N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its high voltage rating, low on-resistance, and extremely low gate charge, making it suitable for a variety of high-performance applications. The MDmesh M2 technology enhances the device's efficiency through its strip layout and improved vertical structure.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
RDS(on) (On-Resistance)0.60 Ω (typ), 0.68 Ω (max)
ID (Drain Current)7 A
PTOT (Total Power Dissipation)25 W
Gate ChargeExtremely low

Key Features

  • High voltage rating of 650 V, making it suitable for high-voltage applications.
  • Low on-resistance (RDS(on)) of 0.60 Ω (typ), which reduces power losses.
  • Extremely low gate charge, enhancing switching performance and efficiency.
  • MDmesh M2 technology with strip layout and improved vertical structure for better performance.
  • Excellent output characteristics and high reliability.

Applications

The STF11N65M2 MOSFET is designed for use in various high-performance applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial and automotive systems requiring high reliability and efficiency.
  • Switch-mode power supplies and other high-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage of the STF11N65M2 MOSFET?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical on-resistance of the STF11N65M2?
    The typical on-resistance (RDS(on)) is 0.60 Ω.
  3. What is the maximum drain current of the STF11N65M2?
    The maximum drain current (ID) is 7 A.
  4. What technology is used in the STF11N65M2 MOSFET?
    The STF11N65M2 uses the MDmesh M2 technology.
  5. What are the key benefits of the MDmesh M2 technology?
    The MDmesh M2 technology offers a strip layout and an improved vertical structure, resulting in low on-resistance and extremely low gate charge.
  6. What are some typical applications for the STF11N65M2?
    Typical applications include power supplies, DC-DC converters, motor control systems, and industrial and automotive systems.
  7. How does the STF11N65M2 enhance switching performance?
    The STF11N65M2 enhances switching performance due to its extremely low gate charge.
  8. What is the total power dissipation of the STF11N65M2?
    The total power dissipation (PTOT) is 25 W.
  9. Why is the STF11N65M2 suitable for high-frequency switching applications?
    The STF11N65M2 is suitable due to its low on-resistance and extremely low gate charge, which reduce power losses and enhance efficiency.
  10. Where can I find detailed specifications for the STF11N65M2?
    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through distributors like DigiKey and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STFI11N65M2
STFI11N65M2
MOSFET N-CH 650V 7A I2PAKFP

Similar Products

Part Number STF11N65M2 STF18N65M2 STF12N65M2 STF13N65M2 STF16N65M2 STF11N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 12A (Tc) 8A (Tc) 10A (Tc) 11A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V 330mOhm @ 6A, 10V 500mOhm @ 4A, 10V 430mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V 480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 20 nC @ 10 V 16.5 nC @ 10 V 17 nC @ 10 V 19.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 100 V 770 pF @ 100 V 535 pF @ 100 V 590 pF @ 100 V 718 pF @ 100 V 644 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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