STF16N65M2
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STMicroelectronics STF16N65M2

Manufacturer No:
STF16N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 11A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF16N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. The STF16N65M2 features a strip layout and an improved vertical structure, enhancing its electrical characteristics and thermal management.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
On-Resistance (Rds(on))0.32 Ohm (typ.)
Drain Current (Id)11 A
PackageTO-220FP
Thermal Resistance (Rth(j-case))Varies depending on the mounting conditions
Gate Threshold Voltage (Vth)2-4 V

Key Features

  • MDmesh M2 technology for improved performance and reliability
  • High voltage rating of 650 V
  • Low on-resistance of 0.32 Ohm (typ.)
  • High drain current of 11 A
  • TO-220FP package for good thermal dissipation
  • Low gate threshold voltage for easy switching

Applications

The STF16N65M2 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial automation and control systems
  • Automotive systems (non-automotive grade, but can be used in certain automotive applications with proper design considerations)
  • Renewable energy systems such as solar and wind power inverters

Q & A

  1. What is the voltage rating of the STF16N65M2?
    The voltage rating of the STF16N65M2 is 650 V.
  2. What is the typical on-resistance of the STF16N65M2?
    The typical on-resistance is 0.32 Ohm.
  3. What is the maximum drain current of the STF16N65M2?
    The maximum drain current is 11 A.
  4. In what package is the STF16N65M2 available?
    The STF16N65M2 is available in the TO-220FP package.
  5. What technology is used in the STF16N65M2?
    The STF16N65M2 uses MDmesh M2 technology.
  6. What are some common applications for the STF16N65M2?
    Common applications include power supplies, motor control, industrial automation, and renewable energy systems.
  7. What is the gate threshold voltage range of the STF16N65M2?
    The gate threshold voltage range is typically between 2-4 V.
  8. Is the STF16N65M2 suitable for automotive applications?
    While it is not automotive-grade, it can be used in certain automotive applications with proper design considerations.
  9. How does the MDmesh M2 technology benefit the STF16N65M2?
    The MDmesh M2 technology enhances the electrical characteristics and thermal management of the device.
  10. What is the thermal resistance of the STF16N65M2?
    The thermal resistance varies depending on the mounting conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:718 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF16N65M2 STF16N65M5 STF18N65M2 STF11N65M2 STF12N65M2 STF13N65M2 STF16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 12A (Tc) 12A (Tc) 7A (Tc) 8A (Tc) 10A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V 299mOhm @ 6A, 10V 330mOhm @ 6A, 10V 670mOhm @ 3.5A, 10V 500mOhm @ 4A, 10V 430mOhm @ 5A, 10V 320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V 45 nC @ 10 V 20 nC @ 10 V 12.5 nC @ 10 V 16.5 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 718 pF @ 100 V 1250 pF @ 100 V 770 pF @ 100 V 410 pF @ 100 V 535 pF @ 100 V 590 pF @ 100 V 700 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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