STF13N65M2
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STMicroelectronics STF13N65M2

Manufacturer No:
STF13N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 10A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF13N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters and demanding power applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
On-Resistance (Rds(on))370 mΩ (typ.) at 10 A, 10 V
Current Rating (Id)10 A
Gate Charge (Qg)Extremely low
Output Capacitance (Coss)Excellent profile
Avalanche Testing100% tested
PackageTO-220FP
Operating Temperature Range-55°C to 150°C
RoHS ComplianceEcopack2

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Strip layout and improved vertical structure for enhanced performance

Applications

The STF13N65M2 is ideal for various high-efficiency power conversion applications, including:

  • Switch-Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Other high-efficiency converters requiring low on-resistance and optimized switching characteristics.

Q & A

  1. What is the voltage rating of the STF13N65M2?
    The voltage rating of the STF13N65M2 is 650 V.
  2. What is the typical on-resistance of the STF13N65M2?
    The typical on-resistance is 370 mΩ at 10 A, 10 V.
  3. What is the current rating of the STF13N65M2?
    The current rating is 10 A.
  4. What technology is used in the STF13N65M2?
    The STF13N65M2 uses MDmesh™ M2 technology.
  5. Is the STF13N65M2 RoHS compliant?
    Yes, the STF13N65M2 is RoHS compliant with an Ecopack2 grade.
  6. What is the package type of the STF13N65M2?
    The package type is TO-220FP.
  7. What are the key features of the STF13N65M2?
    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.
  8. What are some typical applications of the STF13N65M2?
    Typical applications include SMPS, data centers, solar microinverters, and other high-efficiency converters.
  9. What is the operating temperature range of the STF13N65M2?
    The operating temperature range is -55°C to 150°C.
  10. Where can I find additional resources and documentation for the STF13N65M2?
    You can find additional resources, including datasheets, SPICE models, and EDA symbols, on the STMicroelectronics website and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STFI13N65M2
STFI13N65M2
MOSFET N-CH 650V 10A I2PAKFP

Similar Products

Part Number STF13N65M2 STF18N65M2 STF16N65M2 STF11N65M2 STF12N65M2 STF13N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 12A (Tc) 11A (Tc) 7A (Tc) 8A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 5A, 10V 330mOhm @ 6A, 10V 360mOhm @ 5.5A, 10V 670mOhm @ 3.5A, 10V 500mOhm @ 4A, 10V 380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 20 nC @ 10 V 19.5 nC @ 10 V 12.5 nC @ 10 V 16.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 100 V 770 pF @ 100 V 718 pF @ 100 V 410 pF @ 100 V 535 pF @ 100 V 580 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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