IXFH60N65X2-4
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IXYS IXFH60N65X2-4

Manufacturer No:
IXFH60N65X2-4
Manufacturer:
IXYS
Package:
Tube
Description:
MOSFET N-CH 650V 60A TO247-4L
Delivery:
Payment:
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Product Introduction

Overview

The IXFH60N65X2-4 is a high-performance N-channel power MOSFET developed by IXYS, utilizing their advanced HiPerFET™ and X2-Class technology. This device is designed to offer exceptional power handling capabilities, making it suitable for a wide range of high-power applications. The MOSFET features a drain-source voltage rating of 650V and a drain current of 60A, with a low on-state resistance of 52mΩ. This combination of high voltage and current ratings along with low resistance makes it an ideal choice for applications requiring high power density and efficiency.

Key Specifications

Parameter Value
Manufacturer IXYS
Type of Transistor N-MOSFET
Technology HiPerFET™, X2-Class
Polarisation Unipolar
Drain-Source Voltage (VDS) 650V
Drain Current (ID) 60A
Power Dissipation (PD) 780W
Case TO247-4
Gate-Source Voltage (VGS) ±30V
On-State Resistance (RDS(on)) 52mΩ
Mounting Through Hole (THT)
Gate Charge (QG) 108nC
Kind of Package Tube
Kind of Channel Enhanced
Reverse Recovery Time 180ns

Key Features

  • Low on-state resistance (RDS(on)) of 52mΩ, reducing power losses and increasing efficiency.
  • Avalanche rated, providing robustness against voltage spikes and transient conditions.
  • Low gate charge (QG) of 108nC, facilitating faster switching times and lower gate drive requirements.
  • High power density due to its advanced HiPerFET™ and X2-Class technology.
  • International standard package (TO247-4) for easy mounting and space savings.
  • Fast intrinsic diode with low reverse recovery time, enhancing overall performance in switching applications.

Applications

  • Switch-mode and resonant-mode power supplies.
  • DC-DC converters.
  • PFC (Power Factor Correction) circuits.
  • AC and DC motor drives.
  • Robotics and servo controls.

Q & A

  1. What is the drain-source voltage rating of the IXFH60N65X2-4?

    The drain-source voltage rating is 650V.

  2. What is the maximum drain current for the IXFH60N65X2-4?

    The maximum drain current is 60A.

  3. What is the on-state resistance of the IXFH60N65X2-4?

    The on-state resistance is 52mΩ.

  4. What type of package does the IXFH60N65X2-4 come in?

    The device comes in a TO247-4 package.

  5. Is the IXFH60N65X2-4 avalanche rated?

    Yes, the device is avalanche rated.

  6. What are the typical applications for the IXFH60N65X2-4?

    Typical applications include switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.

  7. What is the gate-source voltage rating for the IXFH60N65X2-4?

    The gate-source voltage rating is ±30V.

  8. What is the reverse recovery time of the IXFH60N65X2-4?

    The reverse recovery time is 180ns.

  9. How much power can the IXFH60N65X2-4 dissipate?

    The device can dissipate up to 780W of power.

  10. What is the mounting type for the IXFH60N65X2-4?

    The mounting type is Through Hole (THT).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:52mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:108 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):780W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4L
Package / Case:TO-247-4
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Similar Products

Part Number IXFH60N65X2-4 IXFH80N65X2-4
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 10V 38mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V 140 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 25 V 8300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 780W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4L TO-247-4L
Package / Case TO-247-4 TO-247-4

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