IXFH60N65X2
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IXYS IXFH60N65X2

Manufacturer No:
IXFH60N65X2
Manufacturer:
IXYS
Package:
Tube
Description:
MOSFET N-CH 650V 60A TO247
Delivery:
Payment:
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Product Introduction

Overview

The IXFH60N65X2 is a high-performance N-channel MOSFET from IXYS, belonging to the X2-Class of ultra-junction MOSFETs. This device is designed to offer superior efficiency, reliability, and thermal performance, making it suitable for a wide range of high-power applications. With its robust design and advanced semiconductor technology, the IXFH60N65X2 is ideal for use in power conversion systems, motor control, and other high-current applications.

Key Specifications

ParameterValue
VDSS (V)650
RDS(ON) max @ 25 °C (Ω)0.052
ID, cont @ 25 °C (A)60
IDM (A)120
Gate Charge (nC)108
Power Dissipation (W)780

Key Features

  • High voltage rating of 650V, ensuring robust performance in high-voltage applications.
  • Low on-resistance (RDS(ON)) of 0.052 Ω, minimizing power losses and enhancing efficiency.
  • Continuous drain current of 60A and peak drain current of 120A, suitable for high-current applications.
  • Advanced X2-Class ultra-junction technology for improved thermal performance and reliability.
  • Easy to mount and space-saving design, facilitating compact system designs.

Applications

  • Power conversion systems, including DC-DC converters and power supplies.
  • Motor control and drive systems.
  • High-power switching applications.
  • Industrial power systems and renewable energy systems.
  • Automotive and aerospace power electronics.

Q & A

  1. What is the maximum voltage rating of the IXFH60N65X2 MOSFET?
    The maximum voltage rating (VDSS) is 650V.
  2. What is the on-resistance (RDS(ON)) of the IXFH60N65X2 at 25 °C?
    The on-resistance (RDS(ON)) is 0.052 Ω.
  3. What is the continuous drain current (ID) of the IXFH60N65X2?
    The continuous drain current (ID) is 60A.
  4. What is the peak drain current (IDM) of the IXFH60N65X2?
    The peak drain current (IDM) is 120A.
  5. What is the gate charge of the IXFH60N65X2?
    The gate charge is 108 nC.
  6. In what type of applications is the IXFH60N65X2 typically used?
    The IXFH60N65X2 is typically used in power conversion systems, motor control, high-power switching, industrial power systems, and automotive/aerospace power electronics.
  7. What technology does the IXFH60N65X2 use?
    The IXFH60N65X2 uses advanced X2-Class ultra-junction technology.
  8. What are the benefits of the X2-Class ultra-junction technology?
    The benefits include improved thermal performance, reliability, and efficiency.
  9. Is the IXFH60N65X2 easy to mount and space-efficient?
    Yes, the IXFH60N65X2 is designed to be easy to mount and is space-efficient.
  10. Where can I find detailed specifications and datasheets for the IXFH60N65X2?
    Detailed specifications and datasheets can be found on the official IXYS website, as well as on distributor websites such as Mouser, Farnell, and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:52mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):780W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH60N65X2 IXFH80N65X2
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 10V 40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V 143 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6180 pF @ 25 V 8245 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 780W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3

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