STP8N120K5
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STMicroelectronics STP8N120K5

Manufacturer No:
STP8N120K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1200V 6A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP8N120K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using their innovative MDmesh™ K5 technology. This proprietary vertical structure enhances the device's performance and efficiency. The STP8N120K5 is part of the MDmesh K5 series, known for its super-junction technology, which offers superior power density and efficiency.

Key Specifications

Parameter Value
Voltage Rating (Vds) 1200 V
Continuous Drain Current (Id) 3.5 A
Pulse Drain Current (Idm) 12 A
On-Resistance (Rds(on)) 2 Ω @ 10 V
Gate Threshold Voltage (Vgs(th)) 5 V @ 100 μA
Power Dissipation (Pd) 130 W
Package TO-220

Key Features

  • Industry's lowest Rds(on) x area and best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected gate
  • MDmesh™ K5 technology for enhanced power density and efficiency

Applications

The STP8N120K5 is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • High-voltage DC-DC converters
  • Aerospace and defense systems

Q & A

  1. What is the voltage rating of the STP8N120K5?

    The voltage rating (Vds) of the STP8N120K5 is 1200 V.

  2. What is the continuous drain current of the STP8N120K5?

    The continuous drain current (Id) is 3.5 A.

  3. What is the pulse drain current of the STP8N120K5?

    The pulse drain current (Idm) is 12 A.

  4. What is the on-resistance (Rds(on)) of the STP8N120K5?

    The on-resistance (Rds(on)) is 2 Ω @ 10 V.

  5. What technology is used in the STP8N120K5?

    The STP8N120K5 uses MDmesh™ K5 technology.

  6. What are the key features of the STP8N120K5?

    The key features include industry's lowest Rds(on) x area, best FoM, ultra-low gate charge, 100% avalanche tested, and Zener-protected gate.

  7. What package type does the STP8N120K5 come in?

    The STP8N120K5 comes in a TO-220 package.

  8. What are some typical applications for the STP8N120K5?

    Typical applications include power supplies, motor control, industrial automation, high-voltage DC-DC converters, and aerospace and defense systems.

  9. Is the STP8N120K5 RoHS compliant?

    Yes, the STP8N120K5 is RoHS compliant.

  10. Where can I find detailed specifications for the STP8N120K5?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and LCSC).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13.7 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:505 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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