BSC093N15NS5ATMA1
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Infineon Technologies BSC093N15NS5ATMA1

Manufacturer No:
BSC093N15NS5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 87A TDSON
Delivery:
Payment:
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Product Introduction

Overview

The BSC093N15NS5ATMA1, part of the OptiMOS™ 5 series from Infineon Technologies, is a high-performance N-channel power MOSFET designed for various low-voltage drive applications. This MOSFET is particularly suited for use in forklifts, e-scooters, telecom systems, and solar applications. It offers significant improvements in key performance parameters, such as reduced on-resistance (RDS(on)) and ultra-low reverse recovery charge (Qrr), without compromising the figure of merit (FOM) for gate charge and output charge. This results in enhanced system efficiency and reduced design complexity.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 150 V
RDS(on), max (On-Resistance) 9.3 mΩ
ID (Continuous Drain Current) 87 A
Qrr (Reverse Recovery Charge) 58 nC
Tj (Operating Junction Temperature) -55 to 150 °C
VGS (Gate-Source Voltage) -20 to 20 V
Ptot (Power Dissipation) 139 W

Key Features

  • Lower RDS(on) without compromising FOMgd and FOMoss
  • Lower output charge
  • Ultra-low reverse recovery charge (Qrr)
  • Increased commutation ruggedness
  • Higher switching frequency possible
  • Pb-free lead plating; RoHS compliant
  • Ideal for high-frequency switching and synchronous rectification

Applications

  • Low voltage drives (e.g., forklifts, e-scooters)
  • Telecom systems
  • Solar applications
  • High-frequency switching and synchronous rectification

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSC093N15NS5ATMA1 MOSFET?

    The maximum drain-source voltage (VDS) is 150 V.

  2. What is the typical on-resistance (RDS(on)) of this MOSFET?

    The maximum on-resistance (RDS(on)) is 9.3 mΩ.

  3. What is the continuous drain current (ID) rating at 25°C?

    The continuous drain current (ID) is 87 A at 25°C.

  4. What is the reverse recovery charge (Qrr) of this MOSFET?

    The reverse recovery charge (Qrr) is 58 nC.

  5. What is the operating junction temperature range for this MOSFET?

    The operating junction temperature range is -55°C to 150°C.

  6. Is the BSC093N15NS5ATMA1 MOSFET RoHS compliant?
  7. What are some of the key applications for this MOSFET?
  8. How does the BSC093N15NS5ATMA1 improve system efficiency?
  9. What is the maximum power dissipation (Ptot) at 25°C? tot) is 139 W at 25°C.

  10. Is this MOSFET suitable for high-frequency switching?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:87A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:9.3mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4.6V @ 107µA
Gate Charge (Qg) (Max) @ Vgs:40.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3230 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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In Stock

$4.46
135

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