BSC093N15NS5ATMA1
  • Share:

Infineon Technologies BSC093N15NS5ATMA1

Manufacturer No:
BSC093N15NS5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 87A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC093N15NS5ATMA1, part of the OptiMOS™ 5 series from Infineon Technologies, is a high-performance N-channel power MOSFET designed for various low-voltage drive applications. This MOSFET is particularly suited for use in forklifts, e-scooters, telecom systems, and solar applications. It offers significant improvements in key performance parameters, such as reduced on-resistance (RDS(on)) and ultra-low reverse recovery charge (Qrr), without compromising the figure of merit (FOM) for gate charge and output charge. This results in enhanced system efficiency and reduced design complexity.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 150 V
RDS(on), max (On-Resistance) 9.3 mΩ
ID (Continuous Drain Current) 87 A
Qrr (Reverse Recovery Charge) 58 nC
Tj (Operating Junction Temperature) -55 to 150 °C
VGS (Gate-Source Voltage) -20 to 20 V
Ptot (Power Dissipation) 139 W

Key Features

  • Lower RDS(on) without compromising FOMgd and FOMoss
  • Lower output charge
  • Ultra-low reverse recovery charge (Qrr)
  • Increased commutation ruggedness
  • Higher switching frequency possible
  • Pb-free lead plating; RoHS compliant
  • Ideal for high-frequency switching and synchronous rectification

Applications

  • Low voltage drives (e.g., forklifts, e-scooters)
  • Telecom systems
  • Solar applications
  • High-frequency switching and synchronous rectification

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSC093N15NS5ATMA1 MOSFET?

    The maximum drain-source voltage (VDS) is 150 V.

  2. What is the typical on-resistance (RDS(on)) of this MOSFET?

    The maximum on-resistance (RDS(on)) is 9.3 mΩ.

  3. What is the continuous drain current (ID) rating at 25°C?

    The continuous drain current (ID) is 87 A at 25°C.

  4. What is the reverse recovery charge (Qrr) of this MOSFET?

    The reverse recovery charge (Qrr) is 58 nC.

  5. What is the operating junction temperature range for this MOSFET?

    The operating junction temperature range is -55°C to 150°C.

  6. Is the BSC093N15NS5ATMA1 MOSFET RoHS compliant?
  7. What are some of the key applications for this MOSFET?
  8. How does the BSC093N15NS5ATMA1 improve system efficiency?
  9. What is the maximum power dissipation (Ptot) at 25°C? tot) is 139 W at 25°C.

  10. Is this MOSFET suitable for high-frequency switching?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:87A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:9.3mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4.6V @ 107µA
Gate Charge (Qg) (Max) @ Vgs:40.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3230 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$4.46
135

Please send RFQ , we will respond immediately.

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB

Related Product By Brand

BAS7005E6433HTMA1
BAS7005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAS4005WE6327BTSA1
BAS4005WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BC847PNH6727XTSA1
BC847PNH6727XTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BFS 17P E6433
BFS 17P E6433
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BC817K40WH6327XTSA1
BC817K40WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCP5416H6327XTSA1
BCP5416H6327XTSA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BC80725WE6327BTSA1
BC80725WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BC 857BT E6327
BC 857BT E6327
Infineon Technologies
TRANS PNP 45V 0.1A SC75
BCP 69-16 E6327
BCP 69-16 E6327
Infineon Technologies
TRANS PNP 20V 1A SOT223-4
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
TLE6250GXUMA1
TLE6250GXUMA1
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8