BC817K40E6359HTMA1
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Infineon Technologies BC817K40E6359HTMA1

Manufacturer No:
BC817K40E6359HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K40E6359HTMA1 is a Bipolar Junction Transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for a variety of electronic applications, offering a balance of high performance and compact packaging. It is housed in a PG-SOT23 surface mount package, making it suitable for modern electronic designs where space is a constraint.

Key Specifications

ParameterValue
TypeBipolar (BJT) Transistor NPN
Collector-Emitter Breakdown Voltage45 V
Collector Current500 mA
Transition Frequency170 MHz
Power Dissipation500 mW
Package TypePG-SOT23 (Surface Mount)

Key Features

  • High Collector-Emitter Breakdown Voltage of 45 V, ensuring robust operation in various applications.
  • Collector Current of 500 mA, suitable for a range of power requirements.
  • Transition Frequency of 170 MHz, making it suitable for high-frequency applications.
  • Compact PG-SOT23 surface mount package, ideal for space-constrained designs.
  • Low power dissipation of 500 mW, contributing to energy-efficient designs.

Applications

The BC817K40E6359HTMA1 is versatile and can be used in a variety of applications, including:

  • General-purpose switching and amplification.
  • High-frequency circuits due to its high transition frequency.
  • Automotive and industrial control systems where reliability and robustness are crucial.
  • Consumer electronics requiring compact and efficient components.

Q & A

  1. What is the type of the BC817K40E6359HTMA1 transistor?
    The BC817K40E6359HTMA1 is a Bipolar Junction Transistor (BJT) of the NPN type.
  2. What is the collector-emitter breakdown voltage of the BC817K40E6359HTMA1?
    The collector-emitter breakdown voltage is 45 V.
  3. What is the maximum collector current of the BC817K40E6359HTMA1?
    The maximum collector current is 500 mA.
  4. What is the transition frequency of the BC817K40E6359HTMA1?
    The transition frequency is 170 MHz.
  5. What is the power dissipation of the BC817K40E6359HTMA1?
    The power dissipation is 500 mW.
  6. What package type does the BC817K40E6359HTMA1 come in?
    The BC817K40E6359HTMA1 comes in a PG-SOT23 surface mount package.
  7. What are some common applications of the BC817K40E6359HTMA1?
    Common applications include general-purpose switching and amplification, high-frequency circuits, automotive and industrial control systems, and consumer electronics.
  8. Why is the BC817K40E6359HTMA1 suitable for high-frequency applications?
    It is suitable due to its high transition frequency of 170 MHz.
  9. What are the benefits of the compact PG-SOT23 package?
    The compact package is ideal for space-constrained designs and modern electronic applications where miniaturization is important.
  10. Who is the manufacturer of the BC817K40E6359HTMA1?
    The manufacturer is Infineon Technologies.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:500 mW
Frequency - Transition:170MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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