BC817K25E6327HTSA1
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Infineon Technologies BC817K25E6327HTSA1

Manufacturer No:
BC817K25E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K25E6327HTSA1 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC817K series and is designed for a wide range of applications, particularly in amplifier and switching circuits. It features a compact SOT-23-3 package, making it suitable for surface mount technology (SMT) and space-constrained designs.

Key Specifications

ParameterValue
Part NumberBC817K25E6327HTSA1
Transistor TypeNPN
Collector-Emitter Voltage (Vce)45V
Collector Current (Ic)500mA
DC Current Gain (hFE) @ Ic, Vce160 @ 100mA, 1V
Vce Saturation @ Ib, Ic700mV @ 50mA, 500mA
Transition Frequency (fT)170MHz
Power Dissipation (Pd)500mW
Operating Temperature (TJ)150°C
PackageSOT-23-3
Mounting TypeSurface Mount
Lead Free / RoHS StatusLead free / RoHS Compliant

Key Features

  • High Collector Current: Up to 500mA, making it suitable for a variety of power and signal amplification applications.
  • High Transition Frequency: 170MHz, which is ideal for high-frequency amplifier circuits.
  • Low Vce Saturation: 700mV at 50mA and 500mA, ensuring efficient operation with minimal voltage drop.
  • Compact Package: SOT-23-3 package, which is convenient for surface mount designs and saves board space.
  • RoHS Compliant: Lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • High Operating Temperature: Up to 150°C junction temperature, making it reliable in harsh environments.

Applications

The BC817K25E6327HTSA1 transistor is versatile and can be used in a variety of applications, including:

  • Amplifier Circuits: Suitable for audio, video, and general-purpose amplification due to its high transition frequency and low Vce saturation.
  • Switching Circuits: Can be used in switching applications where high collector current and low saturation voltage are required.
  • Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive applications where reliability and performance are critical.
  • Industrial Control Systems: Used in industrial control systems for signal amplification and switching.

Q & A

  1. What is the maximum collector current of the BC817K25E6327HTSA1 transistor?
    The maximum collector current is 500mA.
  2. What is the collector-emitter voltage (Vce) of the BC817K25E6327HTSA1 transistor?
    The collector-emitter voltage (Vce) is 45V.
  3. What is the transition frequency (fT) of the BC817K25E6327HTSA1 transistor?
    The transition frequency (fT) is 170MHz.
  4. Is the BC817K25E6327HTSA1 transistor RoHS compliant?
    Yes, the transistor is lead-free and RoHS compliant.
  5. What is the operating temperature range of the BC817K25E6327HTSA1 transistor?
    The operating temperature range is up to 150°C junction temperature.
  6. What is the package type of the BC817K25E6327HTSA1 transistor?
    The package type is SOT-23-3.
  7. What is the DC current gain (hFE) of the BC817K25E6327HTSA1 transistor?
    The DC current gain (hFE) is 160 at 100mA and 1V.
  8. Is the BC817K25E6327HTSA1 transistor suitable for automotive applications?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  9. What is the power dissipation (Pd) of the BC817K25E6327HTSA1 transistor?
    The power dissipation (Pd) is 500mW.
  10. What is the Vce saturation voltage of the BC817K25E6327HTSA1 transistor?
    The Vce saturation voltage is 700mV at 50mA and 500mA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:500 mW
Frequency - Transition:170MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC817K25E6327HTSA1 BC817K25WE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 500 mW 250 mW
Frequency - Transition 170MHz 170MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package PG-SOT23 PG-SOT323

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