BAS16B5000
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Infineon Technologies BAS16B5000

Manufacturer No:
BAS16B5000
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
HIGH SPEED SWITCHING DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16B5000 is a high-speed switching diode produced by Infineon Technologies. It is designed for high-speed switching applications and is known for its electrical insulation and Pb-free (RoHS compliant) packaging. This diode is qualified according to AEC Q101 standards, ensuring its reliability in automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnit
Diode Reverse VoltageVR80V
Peak Reverse VoltageVRM85V
Forward CurrentIF250mA
Non-repetitive Peak Surge Forward Current (t = 1 µs)IFSM4.5A
Total Power Dissipation (TS ≤ 54 °C)Ptot370mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Forward Voltage (IF = 1 mA)VF715 to 855mV
Reverse Recovery Timetrr45 to 75ns

Key Features

  • Designed for high-speed switching applications.
  • Electrical insulation.
  • Pb-free (RoHS compliant) package.
  • Qualified according to AEC Q101 standards.
  • Low forward voltage drop.
  • High reverse voltage capability.
  • Low reverse recovery time.

Applications

The BAS16B5000 is suitable for a variety of high-speed switching applications, including:

  • Automotive systems.
  • Industrial control systems.
  • Consumer electronics.
  • Power supplies and DC-DC converters.
  • High-frequency circuits.

Q & A

  1. What is the maximum reverse voltage of the BAS16B5000?
    The maximum reverse voltage (VR) is 80 V, with a peak reverse voltage (VRM) of 85 V.
  2. What is the forward current rating of the BAS16B5000?
    The forward current (IF) is rated at 250 mA.
  3. Is the BAS16B5000 RoHS compliant?
    Yes, the BAS16B5000 is Pb-free and RoHS compliant.
  4. What are the storage temperature limits for the BAS16B5000?
    The storage temperature range is -65 to 150 °C.
  5. What is the junction temperature limit for the BAS16B5000?
    The junction temperature (Tj) limit is 150 °C.
  6. What are some typical applications for the BAS16B5000?
    Typical applications include automotive systems, industrial control systems, consumer electronics, power supplies, and high-frequency circuits.
  7. What is the reverse recovery time of the BAS16B5000?
    The reverse recovery time (trr) ranges from 45 to 75 ns.
  8. Is the BAS16B5000 qualified according to any specific standards?
    Yes, it is qualified according to AEC Q101 standards.
  9. What is the total power dissipation of the BAS16B5000?
    The total power dissipation (Ptot) is 370 mW at TS ≤ 54 °C.
  10. What is the forward voltage drop of the BAS16B5000?
    The forward voltage (VF) ranges from 715 to 855 mV at different current levels.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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Similar Products

Part Number BAS16B5000 BAS16B5003
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type - -
Voltage - DC Reverse (Vr) (Max) - -
Current - Average Rectified (Io) - -
Voltage - Forward (Vf) (Max) @ If - -
Speed - -
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr - -
Capacitance @ Vr, F - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -
Operating Temperature - Junction - -

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