BAS16B5000
  • Share:

Infineon Technologies BAS16B5000

Manufacturer No:
BAS16B5000
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
HIGH SPEED SWITCHING DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16B5000 is a high-speed switching diode produced by Infineon Technologies. It is designed for high-speed switching applications and is known for its electrical insulation and Pb-free (RoHS compliant) packaging. This diode is qualified according to AEC Q101 standards, ensuring its reliability in automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnit
Diode Reverse VoltageVR80V
Peak Reverse VoltageVRM85V
Forward CurrentIF250mA
Non-repetitive Peak Surge Forward Current (t = 1 µs)IFSM4.5A
Total Power Dissipation (TS ≤ 54 °C)Ptot370mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Forward Voltage (IF = 1 mA)VF715 to 855mV
Reverse Recovery Timetrr45 to 75ns

Key Features

  • Designed for high-speed switching applications.
  • Electrical insulation.
  • Pb-free (RoHS compliant) package.
  • Qualified according to AEC Q101 standards.
  • Low forward voltage drop.
  • High reverse voltage capability.
  • Low reverse recovery time.

Applications

The BAS16B5000 is suitable for a variety of high-speed switching applications, including:

  • Automotive systems.
  • Industrial control systems.
  • Consumer electronics.
  • Power supplies and DC-DC converters.
  • High-frequency circuits.

Q & A

  1. What is the maximum reverse voltage of the BAS16B5000?
    The maximum reverse voltage (VR) is 80 V, with a peak reverse voltage (VRM) of 85 V.
  2. What is the forward current rating of the BAS16B5000?
    The forward current (IF) is rated at 250 mA.
  3. Is the BAS16B5000 RoHS compliant?
    Yes, the BAS16B5000 is Pb-free and RoHS compliant.
  4. What are the storage temperature limits for the BAS16B5000?
    The storage temperature range is -65 to 150 °C.
  5. What is the junction temperature limit for the BAS16B5000?
    The junction temperature (Tj) limit is 150 °C.
  6. What are some typical applications for the BAS16B5000?
    Typical applications include automotive systems, industrial control systems, consumer electronics, power supplies, and high-frequency circuits.
  7. What is the reverse recovery time of the BAS16B5000?
    The reverse recovery time (trr) ranges from 45 to 75 ns.
  8. Is the BAS16B5000 qualified according to any specific standards?
    Yes, it is qualified according to AEC Q101 standards.
  9. What is the total power dissipation of the BAS16B5000?
    The total power dissipation (Ptot) is 370 mW at TS ≤ 54 °C.
  10. What is the forward voltage drop of the BAS16B5000?
    The forward voltage (VF) ranges from 715 to 855 mV at different current levels.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.02
48,730

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BAS16B5000 BAS16B5003
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type - -
Voltage - DC Reverse (Vr) (Max) - -
Current - Average Rectified (Io) - -
Voltage - Forward (Vf) (Max) @ If - -
Speed - -
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr - -
Capacitance @ Vr, F - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -
Operating Temperature - Junction - -

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS40-04B5003
BAS40-04B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
IKW50N60TA
IKW50N60TA
Infineon Technologies
IKW50N60 - AUTOMOTIVE IGBT DISCR
BSP75NNT
BSP75NNT
Infineon Technologies
IC PWR DRVR N-CHAN 1:1 SOT223-4
TLE4267GMXUMA1
TLE4267GMXUMA1
Infineon Technologies
IC REG LINEAR 5V 400MA DSO14-30
FM24CL16B-GTR
FM24CL16B-GTR
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC
S34ML01G200TFI000
S34ML01G200TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I