BFS17PE6327HTSA1
  • Share:

Infineon Technologies BFS17PE6327HTSA1

Manufacturer No:
BFS17PE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.4GHZ SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFS17PE6327HTSA1 is an NPN Silicon RF Transistor produced by Infineon Technologies. This transistor is designed for high-frequency applications and is packaged in a SOT23-3 (TO-236-3, SC-59) surface mount package. It is RoHS compliant and features a maximum collector-emitter voltage of 15 V and a maximum collector current of 25 mA. The device is optimized for low noise and high linearity, making it suitable for a variety of RF and microwave applications.

Key Specifications

Parameter Value Conditions
Transistor Type NPN
Maximum Collector-Emitter Voltage (VCE0) 15 V
Maximum Collector Current (IC) 25 mA
Noise Figure (NF) 3.5 dB ~ 5 dB @ 800 MHz IC = 2 mA, VCE = 5 V, ZS = 50Ω
Third Order Intercept Point at Output (OIP3) 21.5 dBm VCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt
1 dB Output Compression Point (P-1dB) 10 dBm IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 800 MHz
Transition Frequency (fT) 1.4 GHz
Maximum Total Power Dissipation (Ptot) 280 mW
Operating Temperature (TJ) 150°C
Package SOT23-3 (TO-236-3, SC-59)
DC Current Gain (hFE) (Min) 40 @ 2 mA, 1 V

Key Features

  • Low noise figure of 3.5 dB ~ 5 dB at 800 MHz, making it suitable for low-noise amplifier applications.
  • High linearity with a third order intercept point at output (OIP3) of 21.5 dBm.
  • High transition frequency (fT) of 1.4 GHz, enabling high-frequency operation.
  • Maximum collector-emitter voltage of 15 V and maximum collector current of 25 mA.
  • Surface mount SOT23-3 package for compact and efficient design.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.
  • Mixers and oscillators in sub-GHz applications.
  • RF and microwave circuits requiring low noise and high linearity.

Q & A

  1. What is the maximum collector-emitter voltage of the BFS17PE6327HTSA1?

    The maximum collector-emitter voltage is 15 V.

  2. What is the maximum collector current of the BFS17PE6327HTSA1?

    The maximum collector current is 25 mA.

  3. What is the noise figure of the BFS17PE6327HTSA1 at 800 MHz?

    The noise figure is 3.5 dB ~ 5 dB at 800 MHz.

  4. What is the transition frequency (fT) of the BFS17PE6327HTSA1?

    The transition frequency is 1.4 GHz.

  5. What is the package type of the BFS17PE6327HTSA1?

    The package type is SOT23-3 (TO-236-3, SC-59).

  6. Is the BFS17PE6327HTSA1 RoHS compliant?

    Yes, the BFS17PE6327HTSA1 is RoHS compliant.

  7. What are the typical applications of the BFS17PE6327HTSA1?

    Typical applications include broadband amplifiers up to 1 GHz, mixers, and oscillators in sub-GHz applications.

  8. What is the maximum total power dissipation of the BFS17PE6327HTSA1?

    The maximum total power dissipation is 280 mW.

  9. What is the operating temperature range of the BFS17PE6327HTSA1?

    The operating temperature range is up to 150°C (TJ).

  10. What is the DC current gain (hFE) of the BFS17PE6327HTSA1?

    The DC current gain (hFE) is 40 @ 2 mA, 1 V.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB ~ 5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.06
14,087

Please send RFQ , we will respond immediately.

Similar Products

Part Number BFS17PE6327HTSA1 BFS17SE6327HTSA1 BFS17WE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Obsolete Obsolete
Transistor Type NPN 2 NPN (Dual) NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V
Frequency - Transition 1.4GHz 1.4GHz 1.4GHz
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz 3dB ~ 5dB @ 800MHz 3.5dB ~ 5dB @ 800MHz
Gain - - -
Power - Max 280mW 280mW 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V 40 @ 2mA, 1V 40 @ 2mA, 1V
Current - Collector (Ic) (Max) 25mA 25mA 25mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 6-VSSOP, SC-88, SOT-363 SC-70, SOT-323
Supplier Device Package PG-SOT23 PG-SOT363-PO PG-SOT323

Related Product By Categories

BFU590GX
BFU590GX
NXP USA Inc.
RF TRANS NPN 12V 8.5GHZ SOT223
BFU550215
BFU550215
NXP USA Inc.
NPN RF TRANSISTOR
BFU550AVL
BFU550AVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
BFG520,215
BFG520,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG198,115
BFG198,115
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT223
BFG97,115
BFG97,115
NXP USA Inc.
RF TRANS NPN 15V 5.5GHZ SOT223
BFQ540,115
BFQ540,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT89-3
BFR520,215
BFR520,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ TO236AB
BFG425W,135
BFG425W,135
NXP USA Inc.
RF TRANS NPN 4.5V 25GHZ CMPAK-4
BFG310W/XR,115
BFG310W/XR,115
NXP USA Inc.
RF TRANS NPN 6V 14GHZ CMPAK-4
BFT92E6327
BFT92E6327
Infineon Technologies
RF TRANS PNP 15V 5GHZ SOT23-3
BFS17WH6393XTSA1
BFS17WH6393XTSA1
Infineon Technologies
RF TRANS NPN SOT323-3

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAT54-05WH6327
BAT54-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BCV47E6327HTSA1
BCV47E6327HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC 846A E6433
BC 846A E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BC847BWE6327BTSA1
BC847BWE6327BTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-323
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
BTS5030-2EKA
BTS5030-2EKA
Infineon Technologies
BTS5030 - PROFET - SMART HIGH SI