BFS17PE6327HTSA1
  • Share:

Infineon Technologies BFS17PE6327HTSA1

Manufacturer No:
BFS17PE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.4GHZ SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFS17PE6327HTSA1 is an NPN Silicon RF Transistor produced by Infineon Technologies. This transistor is designed for high-frequency applications and is packaged in a SOT23-3 (TO-236-3, SC-59) surface mount package. It is RoHS compliant and features a maximum collector-emitter voltage of 15 V and a maximum collector current of 25 mA. The device is optimized for low noise and high linearity, making it suitable for a variety of RF and microwave applications.

Key Specifications

Parameter Value Conditions
Transistor Type NPN
Maximum Collector-Emitter Voltage (VCE0) 15 V
Maximum Collector Current (IC) 25 mA
Noise Figure (NF) 3.5 dB ~ 5 dB @ 800 MHz IC = 2 mA, VCE = 5 V, ZS = 50Ω
Third Order Intercept Point at Output (OIP3) 21.5 dBm VCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt
1 dB Output Compression Point (P-1dB) 10 dBm IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 800 MHz
Transition Frequency (fT) 1.4 GHz
Maximum Total Power Dissipation (Ptot) 280 mW
Operating Temperature (TJ) 150°C
Package SOT23-3 (TO-236-3, SC-59)
DC Current Gain (hFE) (Min) 40 @ 2 mA, 1 V

Key Features

  • Low noise figure of 3.5 dB ~ 5 dB at 800 MHz, making it suitable for low-noise amplifier applications.
  • High linearity with a third order intercept point at output (OIP3) of 21.5 dBm.
  • High transition frequency (fT) of 1.4 GHz, enabling high-frequency operation.
  • Maximum collector-emitter voltage of 15 V and maximum collector current of 25 mA.
  • Surface mount SOT23-3 package for compact and efficient design.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.
  • Mixers and oscillators in sub-GHz applications.
  • RF and microwave circuits requiring low noise and high linearity.

Q & A

  1. What is the maximum collector-emitter voltage of the BFS17PE6327HTSA1?

    The maximum collector-emitter voltage is 15 V.

  2. What is the maximum collector current of the BFS17PE6327HTSA1?

    The maximum collector current is 25 mA.

  3. What is the noise figure of the BFS17PE6327HTSA1 at 800 MHz?

    The noise figure is 3.5 dB ~ 5 dB at 800 MHz.

  4. What is the transition frequency (fT) of the BFS17PE6327HTSA1?

    The transition frequency is 1.4 GHz.

  5. What is the package type of the BFS17PE6327HTSA1?

    The package type is SOT23-3 (TO-236-3, SC-59).

  6. Is the BFS17PE6327HTSA1 RoHS compliant?

    Yes, the BFS17PE6327HTSA1 is RoHS compliant.

  7. What are the typical applications of the BFS17PE6327HTSA1?

    Typical applications include broadband amplifiers up to 1 GHz, mixers, and oscillators in sub-GHz applications.

  8. What is the maximum total power dissipation of the BFS17PE6327HTSA1?

    The maximum total power dissipation is 280 mW.

  9. What is the operating temperature range of the BFS17PE6327HTSA1?

    The operating temperature range is up to 150°C (TJ).

  10. What is the DC current gain (hFE) of the BFS17PE6327HTSA1?

    The DC current gain (hFE) is 40 @ 2 mA, 1 V.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB ~ 5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.06
14,087

Please send RFQ , we will respond immediately.

Similar Products

Part Number BFS17PE6327HTSA1 BFS17SE6327HTSA1 BFS17WE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Obsolete Obsolete
Transistor Type NPN 2 NPN (Dual) NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V 15V
Frequency - Transition 1.4GHz 1.4GHz 1.4GHz
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz 3dB ~ 5dB @ 800MHz 3.5dB ~ 5dB @ 800MHz
Gain - - -
Power - Max 280mW 280mW 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V 40 @ 2mA, 1V 40 @ 2mA, 1V
Current - Collector (Ic) (Max) 25mA 25mA 25mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 6-VSSOP, SC-88, SOT-363 SC-70, SOT-323
Supplier Device Package PG-SOT23 PG-SOT363-PO PG-SOT323

Related Product By Categories

BFU910FX
BFU910FX
NXP USA Inc.
RF TRANS NPN 9.5V SOT343F
BFR106E6327HTSA1
BFR106E6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 5GHZ SOT23-3
BFU520R
BFU520R
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFU580QX
BFU580QX
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT89-3
BFR93AWE6327
BFR93AWE6327
Infineon Technologies
RF BIPOLAR TRANSISTOR
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG520,215
BFG520,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG540,215
BFG540,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG310/XR,215
BFG310/XR,215
NXP USA Inc.
RF TRANS NPN 6V 14GHZ SOT143R
BFG35,115
BFG35,115
NXP USA Inc.
RF TRANS NPN 18V 4GHZ SOT223
BFS520,115
BFS520,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
BFR93A,235
BFR93A,235
NXP USA Inc.
RF TRANS NPN 12V 6GHZ TO236AB

Related Product By Brand

BC847PNB6327XT
BC847PNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC807-40E6433
BC807-40E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
BTN8982TAAUMA1
BTN8982TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
BTS5030-2EKA
BTS5030-2EKA
Infineon Technologies
BTS5030 - PROFET - SMART HIGH SI
TLE7368EXUMA1
TLE7368EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36
TLE73682EXUMA1
TLE73682EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36