2SC5226A-4-TL-E
  • Share:

onsemi 2SC5226A-4-TL-E

Manufacturer No:
2SC5226A-4-TL-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 10V 7GHZ 3MCP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SC5226A-4-TL-E is a high-performance RF transistor manufactured by onsemi. This NPN bipolar transistor is designed for VHF to UHF wide-band low-noise amplifier applications. It is characterized by its high frequency transition (fT) of 7 GHz, making it suitable for a variety of radio frequency amplification needs.

Key Specifications

ParameterValue
Voltage (Vce)10 V
Collector Current (Ic)70 mA
Frequency Transition (fT)7 GHz
Power Dissipation (Pd)150 mW
Package TypeSurface Mount

Key Features

  • High frequency transition (fT) of 7 GHz for wide-band applications.
  • Low noise characteristics, making it ideal for amplifier circuits.
  • Surface mount package for easy integration into modern PCB designs.
  • Collector current of 70 mA and voltage rating of 10 V.
  • Low power dissipation of 150 mW, contributing to energy efficiency.

Applications

The 2SC5226A-4-TL-E is primarily used in VHF to UHF wide-band low-noise amplifier applications. This includes:

  • Radio frequency amplifiers in communication systems.
  • Wireless communication devices.
  • RF front-end modules in various electronic systems.
  • Low-noise amplification stages in receivers and transceivers.

Q & A

  1. What is the frequency transition (fT) of the 2SC5226A-4-TL-E? The frequency transition (fT) is 7 GHz.
  2. What is the collector current rating of the 2SC5226A-4-TL-E? The collector current rating is 70 mA.
  3. What is the voltage rating of the 2SC5226A-4-TL-E? The voltage rating is 10 V.
  4. What is the power dissipation of the 2SC5226A-4-TL-E? The power dissipation is 150 mW.
  5. What type of package does the 2SC5226A-4-TL-E come in? It comes in a surface mount package.
  6. What are the primary applications of the 2SC5226A-4-TL-E? It is used in VHF to UHF wide-band low-noise amplifier applications.
  7. Is the 2SC5226A-4-TL-E suitable for high-frequency applications? Yes, it is suitable due to its high fT of 7 GHz.
  8. Where can I find detailed specifications for the 2SC5226A-4-TL-E? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.
  9. What type of transistor is the 2SC5226A-4-TL-E? It is an NPN bipolar transistor.
  10. Is the 2SC5226A-4-TL-E energy-efficient? Yes, it has a low power dissipation of 150 mW, contributing to energy efficiency.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):10V
Frequency - Transition:7GHz
Noise Figure (dB Typ @ f):1dB @ 1GHz
Gain:12dB
Power - Max:150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 20mA, 5V
Current - Collector (Ic) (Max):70mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70 / MCP3
0 Remaining View Similar

In Stock

$0.45
381

Please send RFQ , we will respond immediately.

Same Series
2SC5226A-5-TL-E
2SC5226A-5-TL-E
RF TRANS NPN 10V 7GHZ 3MCP

Similar Products

Part Number 2SC5226A-4-TL-E 2SC5226A-5-TL-E
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 10V 10V
Frequency - Transition 7GHz 7GHz
Noise Figure (dB Typ @ f) 1dB @ 1GHz 1dB @ 1GHz
Gain 12dB 12dB
Power - Max 150mW 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 20mA, 5V 135 @ 20mA, 5V
Current - Collector (Ic) (Max) 70mA 70mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 / MCP3 3-MCP

Related Product By Categories

BFU550215
BFU550215
NXP USA Inc.
NPN RF TRANSISTOR
BFU910FX
BFU910FX
NXP USA Inc.
RF TRANS NPN 9.5V SOT343F
BFU520WF
BFU520WF
NXP USA Inc.
RF TRANS NPN 12V 10GHZ SOT323-3
BLF6G20S-45112
BLF6G20S-45112
NXP USA Inc.
RF POWER TRANSISTORS
BFU530WF
BFU530WF
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
BFG505/X,215
BFG505/X,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG540/X,215
BFG540/X,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG425W,135
BFG425W,135
NXP USA Inc.
RF TRANS NPN 4.5V 25GHZ CMPAK-4
BFR92AW,135
BFR92AW,135
NXP USA Inc.
RF TRANS NPN 15V 5GHZ SOT323-3
PBR941,215
PBR941,215
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
BFS 17P E6433
BFS 17P E6433
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP