2SC5226A-4-TL-E
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onsemi 2SC5226A-4-TL-E

Manufacturer No:
2SC5226A-4-TL-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 10V 7GHZ 3MCP
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Introduction

Overview

The 2SC5226A-4-TL-E is a high-performance RF transistor manufactured by onsemi. This NPN bipolar transistor is designed for VHF to UHF wide-band low-noise amplifier applications. It is characterized by its high frequency transition (fT) of 7 GHz, making it suitable for a variety of radio frequency amplification needs.

Key Specifications

ParameterValue
Voltage (Vce)10 V
Collector Current (Ic)70 mA
Frequency Transition (fT)7 GHz
Power Dissipation (Pd)150 mW
Package TypeSurface Mount

Key Features

  • High frequency transition (fT) of 7 GHz for wide-band applications.
  • Low noise characteristics, making it ideal for amplifier circuits.
  • Surface mount package for easy integration into modern PCB designs.
  • Collector current of 70 mA and voltage rating of 10 V.
  • Low power dissipation of 150 mW, contributing to energy efficiency.

Applications

The 2SC5226A-4-TL-E is primarily used in VHF to UHF wide-band low-noise amplifier applications. This includes:

  • Radio frequency amplifiers in communication systems.
  • Wireless communication devices.
  • RF front-end modules in various electronic systems.
  • Low-noise amplification stages in receivers and transceivers.

Q & A

  1. What is the frequency transition (fT) of the 2SC5226A-4-TL-E? The frequency transition (fT) is 7 GHz.
  2. What is the collector current rating of the 2SC5226A-4-TL-E? The collector current rating is 70 mA.
  3. What is the voltage rating of the 2SC5226A-4-TL-E? The voltage rating is 10 V.
  4. What is the power dissipation of the 2SC5226A-4-TL-E? The power dissipation is 150 mW.
  5. What type of package does the 2SC5226A-4-TL-E come in? It comes in a surface mount package.
  6. What are the primary applications of the 2SC5226A-4-TL-E? It is used in VHF to UHF wide-band low-noise amplifier applications.
  7. Is the 2SC5226A-4-TL-E suitable for high-frequency applications? Yes, it is suitable due to its high fT of 7 GHz.
  8. Where can I find detailed specifications for the 2SC5226A-4-TL-E? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.
  9. What type of transistor is the 2SC5226A-4-TL-E? It is an NPN bipolar transistor.
  10. Is the 2SC5226A-4-TL-E energy-efficient? Yes, it has a low power dissipation of 150 mW, contributing to energy efficiency.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):10V
Frequency - Transition:7GHz
Noise Figure (dB Typ @ f):1dB @ 1GHz
Gain:12dB
Power - Max:150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 20mA, 5V
Current - Collector (Ic) (Max):70mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70 / MCP3
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Same Series
2SC5226A-5-TL-E
2SC5226A-5-TL-E
RF TRANS NPN 10V 7GHZ 3MCP

Similar Products

Part Number 2SC5226A-4-TL-E 2SC5226A-5-TL-E
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 10V 10V
Frequency - Transition 7GHz 7GHz
Noise Figure (dB Typ @ f) 1dB @ 1GHz 1dB @ 1GHz
Gain 12dB 12dB
Power - Max 150mW 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 20mA, 5V 135 @ 20mA, 5V
Current - Collector (Ic) (Max) 70mA 70mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 / MCP3 3-MCP

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