BFU520YX
  • Share:

NXP USA Inc. BFU520YX

Manufacturer No:
BFU520YX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS 2 NPN 12V 10GHZ SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU520YX is a high-performance NPN bipolar junction transistor (BJT) manufactured by NXP USA Inc. This transistor is designed for RF applications, offering excellent high-frequency characteristics and reliability. It is part of the BFU520 series, which is known for its robust performance in various RF and microwave circuits.

Key Specifications

ParameterValue
Transistor TypeNPN Bipolar Junction Transistor (BJT)
PackageTO-253-4, TO-253AA (SOT-143B)
Collector-Emitter Breakdown Voltage (Max)12 V
Transition Frequency10.5 GHz
Maximum Power Dissipation450 mW
Operating Temperature Range-40°C to 150°C (TJ)
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
SeriesAutomotive, AEC-Q101

Key Features

  • High transition frequency of 10.5 GHz, making it suitable for high-frequency RF applications.
  • Low noise figure and high gain, ensuring reliable performance in RF circuits.
  • Robust operating temperature range from -40°C to 150°C, suitable for various environmental conditions.
  • Compliant with AEC-Q101 standards, ensuring reliability and quality for automotive applications.
  • ROHS3 compliant, meeting environmental standards for lead-free components.

Applications

The BFU520YX transistor is widely used in various RF and microwave applications, including:

  • RF amplifiers and oscillators.
  • Microwave circuits and systems.
  • Automotive electronics, such as radar and communication systems.
  • Industrial and consumer electronics requiring high-frequency performance.

Q & A

  1. What is the transistor type of the BFU520YX?
    The BFU520YX is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter breakdown voltage of the BFU520YX?
    The maximum collector-emitter breakdown voltage is 12 V.
  3. What is the transition frequency of the BFU520YX?
    The transition frequency is 10.5 GHz.
  4. What is the maximum power dissipation of the BFU520YX?
    The maximum power dissipation is 450 mW.
  5. What is the operating temperature range of the BFU520YX?
    The operating temperature range is from -40°C to 150°C (TJ).
  6. Is the BFU520YX ROHS compliant?
    Yes, the BFU520YX is ROHS3 compliant.
  7. What is the moisture sensitivity level (MSL) of the BFU520YX?
    The MSL is 1 (Unlimited).
  8. What standards does the BFU520YX comply with?
    The BFU520YX complies with AEC-Q101 standards for automotive applications.
  9. In what package types is the BFU520YX available?
    The BFU520YX is available in TO-253-4 and TO-253AA (SOT-143B) packages.
  10. What are some common applications of the BFU520YX?
    The BFU520YX is used in RF amplifiers, oscillators, microwave circuits, automotive electronics, and other high-frequency applications.

Product Attributes

Transistor Type:2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:10GHz
Noise Figure (dB Typ @ f):0.65dB @ 900MHz
Gain:19dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 8V
Current - Collector (Ic) (Max):30mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
0 Remaining View Similar

In Stock

$0.93
283

Please send RFQ , we will respond immediately.

Same Series
BFU520YF
BFU520YF
RF TRANS 2 NPN 12V 10GHZ SOT363

Similar Products

Part Number BFU520YX BFU520WX BFU520YF
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type 2 NPN (Dual) NPN 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V
Frequency - Transition 10GHz 10GHz 10GHz
Noise Figure (dB Typ @ f) 0.65dB @ 900MHz 0.6dB @ 900MHz 1dB @ 1.8GHz
Gain 19dB 18.5dB 14dB
Power - Max 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 8V 60 @ 5mA, 8V 60 @ 5mA, 8V
Current - Collector (Ic) (Max) 30mA 30mA 30mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 SC-70, SOT-323 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP SC-70 6-TSSOP

Related Product By Categories

BFS17NTA
BFS17NTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23-3
BFU520R
BFU520R
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFU530AR
BFU530AR
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
BFS17WE6327
BFS17WE6327
Infineon Technologies
RF BIPOLAR TRANSISTOR
BFS17NQTA
BFS17NQTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23
BFU550AVL
BFU550AVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
BFR540,235
BFR540,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ TO236AB
BFT25,215
BFT25,215
NXP USA Inc.
RF TRANS NPN 5V 2.3GHZ TO236AB
BFR106,215
BFR106,215
NXP USA Inc.
RF TRANS NPN 15V 5GHZ TO236AB
BFG591,115
BFG591,115
NXP USA Inc.
RF TRANS NPN 15V 7GHZ SOT223
BFS17TA
BFS17TA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3

Related Product By Brand

BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
SAA7706H/N210,518
SAA7706H/N210,518
NXP USA Inc.
IC CAR RADIO DSP 80-QFP
LPC4330FET100Y
LPC4330FET100Y
NXP USA Inc.
IC MCU 32BIT ROMLESS 100TFBGA
FS32K116LAT0MLFR
FS32K116LAT0MLFR
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
LPC2294HBD144/01,5
LPC2294HBD144/01,5
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
HEF4053BT/AUJ
HEF4053BT/AUJ
NXP USA Inc.
IC ANLG SWITCH TRPL SPDT 16SOIC
PCAL6416AER
PCAL6416AER
NXP USA Inc.
PARALLEL I/O PORT, 16 I/O, CMOS,
SC16C754BIA68,518
SC16C754BIA68,518
NXP USA Inc.
IC UART QUAD W/FIFO 68-PLCC
74HC245PW/AU118
74HC245PW/AU118
NXP USA Inc.
IC TXRX NON-INVERT 6V 20TSSOP
PCF8566T/S480/1,11
PCF8566T/S480/1,11
NXP USA Inc.
IC DRVR 7 SEGMNT 12 DIGIT 40VSO
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,