BFU520YX
  • Share:

NXP USA Inc. BFU520YX

Manufacturer No:
BFU520YX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS 2 NPN 12V 10GHZ SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU520YX is a high-performance NPN bipolar junction transistor (BJT) manufactured by NXP USA Inc. This transistor is designed for RF applications, offering excellent high-frequency characteristics and reliability. It is part of the BFU520 series, which is known for its robust performance in various RF and microwave circuits.

Key Specifications

ParameterValue
Transistor TypeNPN Bipolar Junction Transistor (BJT)
PackageTO-253-4, TO-253AA (SOT-143B)
Collector-Emitter Breakdown Voltage (Max)12 V
Transition Frequency10.5 GHz
Maximum Power Dissipation450 mW
Operating Temperature Range-40°C to 150°C (TJ)
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
SeriesAutomotive, AEC-Q101

Key Features

  • High transition frequency of 10.5 GHz, making it suitable for high-frequency RF applications.
  • Low noise figure and high gain, ensuring reliable performance in RF circuits.
  • Robust operating temperature range from -40°C to 150°C, suitable for various environmental conditions.
  • Compliant with AEC-Q101 standards, ensuring reliability and quality for automotive applications.
  • ROHS3 compliant, meeting environmental standards for lead-free components.

Applications

The BFU520YX transistor is widely used in various RF and microwave applications, including:

  • RF amplifiers and oscillators.
  • Microwave circuits and systems.
  • Automotive electronics, such as radar and communication systems.
  • Industrial and consumer electronics requiring high-frequency performance.

Q & A

  1. What is the transistor type of the BFU520YX?
    The BFU520YX is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter breakdown voltage of the BFU520YX?
    The maximum collector-emitter breakdown voltage is 12 V.
  3. What is the transition frequency of the BFU520YX?
    The transition frequency is 10.5 GHz.
  4. What is the maximum power dissipation of the BFU520YX?
    The maximum power dissipation is 450 mW.
  5. What is the operating temperature range of the BFU520YX?
    The operating temperature range is from -40°C to 150°C (TJ).
  6. Is the BFU520YX ROHS compliant?
    Yes, the BFU520YX is ROHS3 compliant.
  7. What is the moisture sensitivity level (MSL) of the BFU520YX?
    The MSL is 1 (Unlimited).
  8. What standards does the BFU520YX comply with?
    The BFU520YX complies with AEC-Q101 standards for automotive applications.
  9. In what package types is the BFU520YX available?
    The BFU520YX is available in TO-253-4 and TO-253AA (SOT-143B) packages.
  10. What are some common applications of the BFU520YX?
    The BFU520YX is used in RF amplifiers, oscillators, microwave circuits, automotive electronics, and other high-frequency applications.

Product Attributes

Transistor Type:2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:10GHz
Noise Figure (dB Typ @ f):0.65dB @ 900MHz
Gain:19dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 8V
Current - Collector (Ic) (Max):30mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
0 Remaining View Similar

In Stock

$0.93
283

Please send RFQ , we will respond immediately.

Same Series
BFU520YF
BFU520YF
RF TRANS 2 NPN 12V 10GHZ SOT363

Similar Products

Part Number BFU520YX BFU520WX BFU520YF
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type 2 NPN (Dual) NPN 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V
Frequency - Transition 10GHz 10GHz 10GHz
Noise Figure (dB Typ @ f) 0.65dB @ 900MHz 0.6dB @ 900MHz 1dB @ 1.8GHz
Gain 19dB 18.5dB 14dB
Power - Max 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 8V 60 @ 5mA, 8V 60 @ 5mA, 8V
Current - Collector (Ic) (Max) 30mA 30mA 30mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 SC-70, SOT-323 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP SC-70 6-TSSOP

Related Product By Categories

BFU910FX
BFU910FX
NXP USA Inc.
RF TRANS NPN 9.5V SOT343F
BFU550XR235
BFU550XR235
NXP USA Inc.
NPN RF TRANSISTOR
BFU520XRVL
BFU520XRVL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143R
BFQ67W,135
BFQ67W,135
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT323-3
BFG97,115
BFG97,115
NXP USA Inc.
RF TRANS NPN 15V 5.5GHZ SOT223
BFG35,115
BFG35,115
NXP USA Inc.
RF TRANS NPN 18V 4GHZ SOT223
BFG425W,135
BFG425W,135
NXP USA Inc.
RF TRANS NPN 4.5V 25GHZ CMPAK-4
BFS520,135
BFS520,135
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
MMBTH10LT1
MMBTH10LT1
onsemi
TRANS SS VHF NPN 25V SOT23
BFR 93AW E6327
BFR 93AW E6327
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3
MRF5812R1
MRF5812R1
Microsemi Corporation
RF TRANS NPN 15V 5GHZ 8SO
BFS17PE6752HTSA1
BFS17PE6752HTSA1
Infineon Technologies
RF TRANS NPN SOT23-3

Related Product By Brand

ADC1004S030TS/C1:1
ADC1004S030TS/C1:1
NXP USA Inc.
IC ADC 10BIT 28SSOP
S9S12G128AMLH
S9S12G128AMLH
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 64LQFP
MIMXRT1176CVM8A
MIMXRT1176CVM8A
NXP USA Inc.
IC MCU 32BIT EXT MEM 289MAPBGA
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
SC16C754BIA68,518
SC16C754BIA68,518
NXP USA Inc.
IC UART QUAD W/FIFO 68-PLCC
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX
MPX5010GP
MPX5010GP
NXP USA Inc.
SENSOR GAUGE PRESS 1.45 PSI MAX