BFG31,115
  • Share:

NXP USA Inc. BFG31,115

Manufacturer No:
BFG31,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS PNP 15V 5GHZ SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFG31,115 is a PNP planar epitaxial transistor manufactured by NXP USA Inc. This transistor is designed for wideband amplifier applications and is housed in a plastic SOT223 envelope. It is part of NXP's discrete semiconductor product line, specifically tailored for high-frequency operations.

Key Specifications

SpecificationValue
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition5GHz
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 70mA, 10V
Current - Collector (Ic) (Max)100mA
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA (Supplier Device Package: SC-73)

Key Features

  • High-frequency operation up to 5GHz, making it suitable for wideband amplifier applications.
  • PNP planar epitaxial transistor structure for reliable performance.
  • Maximum collector current of 100mA and maximum power dissipation of 1W.
  • Surface mount package (SOT223) for easy integration into modern circuit designs.
  • Complementary NPN transistor available as BFG97 for balanced circuit designs.

Applications

The BFG31,115 transistor is primarily used in wideband amplifier applications, including but not limited to:

  • RF amplifiers in communication systems.
  • High-frequency signal processing circuits.
  • Audio and radio frequency amplification.
  • General-purpose high-frequency amplification needs.

Q & A

  1. What is the transistor type of the BFG31,115?
    The BFG31,115 is a PNP planar epitaxial transistor.
  2. What is the maximum collector-emitter breakdown voltage of the BFG31,115?
    The maximum collector-emitter breakdown voltage is 15V.
  3. What is the maximum frequency of operation for the BFG31,115?
    The transistor can operate up to 5GHz.
  4. What is the maximum power dissipation of the BFG31,115?
    The maximum power dissipation is 1W.
  5. What is the maximum collector current of the BFG31,115?
    The maximum collector current is 100mA.
  6. What is the mounting type of the BFG31,115?
    The transistor is a surface mount device.
  7. What is the package type of the BFG31,115?
    The package type is TO-261-4, TO-261AA (Supplier Device Package: SC-73).
  8. What is the complementary NPN transistor for the BFG31,115?
    The complementary NPN transistor is the BFG97.
  9. In what types of applications is the BFG31,115 typically used?
    The BFG31,115 is typically used in wideband amplifier applications, including RF amplifiers, high-frequency signal processing, and audio and radio frequency amplification.
  10. Where can I find detailed specifications and datasheets for the BFG31,115?
    Detailed specifications and datasheets can be found on the NXP website, Digi-Key, and other electronic component distributors.

Product Attributes

Transistor Type:PNP
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:5GHz
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:1W
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 70mA, 10V
Current - Collector (Ic) (Max):100mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SC-73
0 Remaining View Similar

In Stock

-
352

Please send RFQ , we will respond immediately.

Similar Products

Part Number BFG31,115 BFG35,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type PNP NPN
Voltage - Collector Emitter Breakdown (Max) 15V 18V
Frequency - Transition 5GHz 4GHz
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max 1W 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 70mA, 10V 25 @ 100mA, 10V
Current - Collector (Ic) (Max) 100mA 150mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SC-73 SC-73

Related Product By Categories

BFR93AWH6327XTSA1
BFR93AWH6327XTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3
BFU730F,115
BFU730F,115
NXP USA Inc.
RF TRANS NPN 2.8V 55GHZ 4DFP
BFU520AR
BFU520AR
NXP USA Inc.
RF TRANS NPN 12V 10GHZ TO236AB
BFU520WF
BFU520WF
NXP USA Inc.
RF TRANS NPN 12V 10GHZ SOT323-3
BFU550XR235
BFU550XR235
NXP USA Inc.
NPN RF TRANSISTOR
BFG520/X,235
BFG520/X,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG310/XR,215
BFG310/XR,215
NXP USA Inc.
RF TRANS NPN 6V 14GHZ SOT143R
BFG410W,135
BFG410W,135
NXP USA Inc.
RF TRANS NPN 4.5V 22GHZ CMPAK-4
BFS17,235
BFS17,235
NXP USA Inc.
RF TRANS NPN 15V 1GHZ TO236AB
PBR951,215
PBR951,215
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
BFG424F,115
BFG424F,115
NXP USA Inc.
RF TRANS NPN 4.5V 25GHZ 4SO
BFS17WE6327HTSA1
BFS17WE6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3

Related Product By Brand

PESD5V0U1BA115
PESD5V0U1BA115
NXP USA Inc.
TVS DIODE 5VWM SOD323
BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
PMBT3906/TE1215
PMBT3906/TE1215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
74HCT573D/C4118
74HCT573D/C4118
NXP USA Inc.
BUS DRIVER, HCT SERIES, 8-BIT
SPC5607BF1MLU6557
SPC5607BF1MLU6557
NXP USA Inc.
MICROCONTROLLER 32-BIT, POWER AR
MKW36A512VFP4
MKW36A512VFP4
NXP USA Inc.
KINETIS W 32-BIT MCU ARM CORTEX-