BFG31,115
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NXP USA Inc. BFG31,115

Manufacturer No:
BFG31,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS PNP 15V 5GHZ SOT223
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BFG31,115 is a PNP planar epitaxial transistor manufactured by NXP USA Inc. This transistor is designed for wideband amplifier applications and is housed in a plastic SOT223 envelope. It is part of NXP's discrete semiconductor product line, specifically tailored for high-frequency operations.

Key Specifications

SpecificationValue
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition5GHz
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 70mA, 10V
Current - Collector (Ic) (Max)100mA
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA (Supplier Device Package: SC-73)

Key Features

  • High-frequency operation up to 5GHz, making it suitable for wideband amplifier applications.
  • PNP planar epitaxial transistor structure for reliable performance.
  • Maximum collector current of 100mA and maximum power dissipation of 1W.
  • Surface mount package (SOT223) for easy integration into modern circuit designs.
  • Complementary NPN transistor available as BFG97 for balanced circuit designs.

Applications

The BFG31,115 transistor is primarily used in wideband amplifier applications, including but not limited to:

  • RF amplifiers in communication systems.
  • High-frequency signal processing circuits.
  • Audio and radio frequency amplification.
  • General-purpose high-frequency amplification needs.

Q & A

  1. What is the transistor type of the BFG31,115?
    The BFG31,115 is a PNP planar epitaxial transistor.
  2. What is the maximum collector-emitter breakdown voltage of the BFG31,115?
    The maximum collector-emitter breakdown voltage is 15V.
  3. What is the maximum frequency of operation for the BFG31,115?
    The transistor can operate up to 5GHz.
  4. What is the maximum power dissipation of the BFG31,115?
    The maximum power dissipation is 1W.
  5. What is the maximum collector current of the BFG31,115?
    The maximum collector current is 100mA.
  6. What is the mounting type of the BFG31,115?
    The transistor is a surface mount device.
  7. What is the package type of the BFG31,115?
    The package type is TO-261-4, TO-261AA (Supplier Device Package: SC-73).
  8. What is the complementary NPN transistor for the BFG31,115?
    The complementary NPN transistor is the BFG97.
  9. In what types of applications is the BFG31,115 typically used?
    The BFG31,115 is typically used in wideband amplifier applications, including RF amplifiers, high-frequency signal processing, and audio and radio frequency amplification.
  10. Where can I find detailed specifications and datasheets for the BFG31,115?
    Detailed specifications and datasheets can be found on the NXP website, Digi-Key, and other electronic component distributors.

Product Attributes

Transistor Type:PNP
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:5GHz
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:1W
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 70mA, 10V
Current - Collector (Ic) (Max):100mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SC-73
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Similar Products

Part Number BFG31,115 BFG35,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type PNP NPN
Voltage - Collector Emitter Breakdown (Max) 15V 18V
Frequency - Transition 5GHz 4GHz
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max 1W 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 70mA, 10V 25 @ 100mA, 10V
Current - Collector (Ic) (Max) 100mA 150mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SC-73 SC-73

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