Overview
The MRF5812R1 is a high-performance RF bipolar transistor manufactured by Microsemi Corporation. This transistor is designed for use in RF and microwave applications, particularly in low-power amplifiers and other high-frequency circuits. It is part of the MRF581 series, known for its low noise and high current handling capabilities.
Key Specifications
| Specification | Value |
|---|---|
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | Up to 5GHz |
| Noise Figure (dB Typ @ f) | 2.5 dB @ 500 MHz |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 200mA |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC |
Key Features
- Low noise figure, typically 2.5 dB at 500 MHz, making it suitable for high-sensitivity applications.
- High current handling capability of up to 200 mA.
- High gain in the range of 13 dB to 15.5 dB.
- Operating frequency up to 5 GHz, ideal for RF and microwave applications.
- Surface mount package (8-SOIC) for easy integration into modern PCB designs.
Applications
- RF and microwave amplifiers.
- Low-power amplifiers up to 1.0 GHz.
- High-frequency communication systems.
- Radar and satellite communication equipment.
- Wireless communication devices.
Q & A
- What is the maximum collector-emitter breakdown voltage of the MRF5812R1 transistor?
The maximum collector-emitter breakdown voltage is 15V.
- What is the typical noise figure of the MRF5812R1 at 500 MHz?
The typical noise figure is 2.5 dB at 500 MHz.
- What is the maximum collector current of the MRF5812R1 transistor?
The maximum collector current is 200 mA.
- What is the package type of the MRF5812R1 transistor?
The package type is 8-SOIC.
- What are the typical applications of the MRF5812R1 transistor?
Typical applications include RF and microwave amplifiers, low-power amplifiers up to 1.0 GHz, high-frequency communication systems, radar, and satellite communication equipment.
- What is the operating frequency range of the MRF5812R1 transistor?
The operating frequency range is up to 5 GHz.
- What is the maximum power handling capability of the MRF5812R1 transistor?
The maximum power handling capability is 1.25 W.
- What is the DC current gain (hFE) of the MRF5812R1 transistor at 50 mA and 5 V?
The DC current gain (hFE) is 50 at 50 mA and 5 V.
- Is the MRF5812R1 transistor suitable for surface mount technology?
- What are the key benefits of using the MRF5812R1 transistor in RF applications?
The key benefits include low noise, high gain, and high current handling capabilities, making it ideal for high-sensitivity and high-frequency applications.
