BFR93A,235
  • Share:

NXP USA Inc. BFR93A,235

Manufacturer No:
BFR93A,235
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 6GHZ TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFR93A,235 is a high-performance NPN wideband transistor manufactured by NXP USA Inc. This transistor is designed for high-frequency applications and is part of NXP's extensive range of discrete semiconductor products. The BFR93A,235 is housed in a TO-236AB plastic, surface-mounted package, making it suitable for a variety of modern electronic designs.

Key Specifications

ParameterConditionsTypicalMaximumUnit
Collector-Base Voltage (VCBO)Open Emitter-15V
Collector-Emitter Voltage (VCEO)Open Base-12V
Emitter-Base Voltage (VEBO)Open Collector-2V
Collector Current (IC)DC-35mA
Total Power Dissipation (Ptot)Ts ≤ 95°C-300mW
Storage Temperature (Tstg)--65150°C
Junction Temperature (Tj)--175°C
Transition Frequency--6GHz
DC Current Gain (hFE)@ Ic, Vce40--

Key Features

  • High power gain
  • Low noise figure
  • Very low intermodulation distortion
  • NPN wideband transistor suitable for RF applications
  • Surface-mounted package (TO-236AB) with 3 terminals and 1.9 mm pitch
  • Compact body dimensions: 2.9 mm x 1.3 mm x 1 mm

Applications

The BFR93A,235 is primarily used in RF wideband amplifiers and oscillators. Its high-frequency capabilities make it suitable for various radio frequency applications, including communication systems, radar systems, and other high-frequency electronic circuits.

Q & A

  1. What is the maximum collector-emitter voltage of the BFR93A,235?
    The maximum collector-emitter voltage (VCEO) is 12 V.
  2. What is the transition frequency of the BFR93A,235?
    The transition frequency is 6 GHz.
  3. What type of package does the BFR93A,235 use?
    The BFR93A,235 is housed in a TO-236AB plastic, surface-mounted package.
  4. What are the key features of the BFR93A,235?
    Key features include high power gain, low noise figure, and very low intermodulation distortion.
  5. What are the typical applications of the BFR93A,235?
    Typical applications include RF wideband amplifiers and oscillators.
  6. What is the maximum collector current of the BFR93A,235?
    The maximum collector current (IC) is 35 mA.
  7. What is the storage temperature range for the BFR93A,235?
    The storage temperature range is -65°C to 150°C.
  8. What is the junction temperature limit for the BFR93A,235?
    The junction temperature limit is 175°C.
  9. What is the DC current gain (hFE) of the BFR93A,235?
    The DC current gain (hFE) is typically 40 at Ic = 30 mA and Vce = 5 V.
  10. Is the BFR93A,235 suitable for high-frequency applications?
    Yes, it is designed for high-frequency applications up to 6 GHz.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:6GHz
Noise Figure (dB Typ @ f):1.9dB ~ 3dB @ 1GHz ~ 2GHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 30mA, 5V
Current - Collector (Ic) (Max):35mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

-
163

Please send RFQ , we will respond immediately.

Same Series
BFR93A,235
BFR93A,235
RF TRANS NPN 12V 6GHZ TO236AB

Similar Products

Part Number BFR93A,235 BFR92A,235 BFR93A,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 15V 12V
Frequency - Transition 6GHz 5GHz 6GHz
Noise Figure (dB Typ @ f) 1.9dB ~ 3dB @ 1GHz ~ 2GHz 2.1dB ~ 3dB @ 1GHz ~ 2GHz 1.9dB ~ 3dB @ 1GHz ~ 2GHz
Gain - - -
Power - Max 300mW 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 5V 65 @ 15mA, 10V 40 @ 30mA, 5V
Current - Collector (Ic) (Max) 35mA 25mA 35mA
Operating Temperature 175°C (TJ) 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)

Related Product By Categories

BFU730F,115
BFU730F,115
NXP USA Inc.
RF TRANS NPN 2.8V 55GHZ 4DFP
BFU520AR
BFU520AR
NXP USA Inc.
RF TRANS NPN 12V 10GHZ TO236AB
BFU550XRR
BFU550XRR
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143R
BFU520XVL
BFU520XVL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BFG480W,135
BFG480W,135
NXP USA Inc.
RF TRANS NPN 4.5V 21GHZ CMPAK-4
BFQ540,115
BFQ540,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT89-3
BFS17,215
BFS17,215
NXP USA Inc.
RF TRANS NPN 15V 1GHZ TO236AB
BFS520,115
BFS520,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
BFS17TA
BFS17TA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BFT92E6327
BFT92E6327
Infineon Technologies
RF TRANS PNP 15V 5GHZ SOT23-3
BFS17SE6327HTSA1
BFS17SE6327HTSA1
Infineon Technologies
RF TRANS 2NPN 15V 1.4GHZ SOT363
BFS 17P E8211
BFS 17P E8211
Infineon Technologies
RF TRANS NPN SOT23-3

Related Product By Brand

BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
74LVC2G32DC-Q100125
74LVC2G32DC-Q100125
NXP USA Inc.
OR GATE, LVC/LCX/Z SERIES
MMPF0100F9AZES
MMPF0100F9AZES
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56QFN
BGU7005/Z/N2115
BGU7005/Z/N2115
NXP USA Inc.
NARROW BAND LOW POWER AMPLIFIER
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL
SA605DK,112
SA605DK,112
NXP USA Inc.
RF RX ASK/FSK 0HZ-500MHZ 20SSOP