Overview
The BFG520/XR,215 is an NPN silicon planar epitaxial transistor produced by NXP USA Inc. This transistor is designed for high-frequency applications in the GHz range, particularly in the RF frontend of various communication and electronic systems. It is well-suited for use in analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers, satellite TV tuners (SATV), and repeater amplifiers in fiber-optic systems.
Key Specifications
| Parameter | Conditions | Min. | Max. | Unit |
|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | Open Emitter | - | 20 | V |
| Collector-Emitter Voltage (VCEO) | Open Base | - | 15 | V |
| Emitter-Base Voltage (VEBO) | Open Collector | - | 2.5 | V |
| DC Collector Current (IC) | - | - | 70 | mA |
| Total Power Dissipation (Ptot) | Up to Ts = 88 °C | - | 300 | mW |
| Storage Temperature (Tstg) | - | -65 | 150 | °C |
| Junction Temperature (Tj) | - | - | 175 | °C |
| Thermal Resistance (Rth j-s) | Up to Ts = 88 °C | - | 290 | K/W |
| Transition Frequency | - | - | 9 | GHz |
| DC Current Gain (hFE) | At Ic = 20 mA, Vce = 6 V | 60 | - | - |
| Noise Figure (Typ @ f) | At 900 MHz | 1.1 | 2.1 | dB |
Key Features
- High power gain and low noise figure, making it suitable for high-frequency applications.
- High transition frequency of up to 9 GHz, ensuring excellent performance in the GHz range.
- Gold metallization for enhanced reliability.
- Encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.
- Surface mount package for easy integration into modern electronic designs.
Applications
- Analog and digital cellular telephones.
- Cordless telephones (CT1, CT2, DECT, etc.).
- Radar detectors.
- Pagers.
- Satellite TV tuners (SATV).
- Repeater amplifiers in fiber-optic systems.
Q & A
- What is the BFG520/XR,215 transistor used for? The BFG520/XR,215 is used in high-frequency applications in the RF frontend of various communication and electronic systems, such as cellular telephones, cordless telephones, radar detectors, and satellite TV tuners.
- What is the maximum collector-emitter voltage (VCEO) of the BFG520/XR,215? The maximum collector-emitter voltage (VCEO) is 15 V.
- What is the maximum DC collector current (IC) for the BFG520/XR,215? The maximum DC collector current (IC) is 70 mA.
- What is the transition frequency of the BFG520/XR,215 transistor? The transition frequency is up to 9 GHz.
- What type of packaging does the BFG520/XR,215 use? The transistor is encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.
- What is the typical noise figure of the BFG520/XR,215 at 900 MHz? The typical noise figure is between 1.1 dB and 2.1 dB at 900 MHz.
- What is the maximum junction temperature (Tj) for the BFG520/XR,215? The maximum junction temperature (Tj) is 175 °C.
- Is the BFG520/XR,215 RoHS compliant? Yes, the BFG520/XR,215 is RoHS compliant and also halogen-free.
- What is the thermal resistance (Rth j-s) of the BFG520/XR,215? The thermal resistance (Rth j-s) is 290 K/W up to Ts = 88 °C.
- What is the DC current gain (hFE) of the BFG520/XR,215 at Ic = 20 mA and Vce = 6 V? The DC current gain (hFE) is 60 at Ic = 20 mA and Vce = 6 V.
