Overview
The BFU550XRR215 is an NPN silicon RF transistor produced by NXP USA Inc. This transistor is part of the BFU5 family and is designed for high-speed, low-noise applications. It is packaged in a plastic, 4-pin dual-emitter SOT143R package, making it suitable for a variety of RF and microwave applications. The BFU550XRR215 is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | Shorted base | - | - | 12 V | V |
| Frequency - Transition | IC = 25 mA; VCE = 8 V; f = 900 MHz | - | 11 GHz | - | GHz |
| Noise Figure (dB Typ @ f) | IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt | - | 0.75 dB | - | dB |
| Gain | IC = 15 mA; VCE = 8 V; f = 900 MHz | - | 21.5 dB | - | dB |
| Power - Max | Tsp ≤ 87 °C | - | - | 450 mW | mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | IC = 15 mA; VCE = 8 V | 60 | 95 | 200 | - |
| Current - Collector (Ic) (Max) | - | - | - | 50 mA | mA |
| Operating Temperature | - | -40 °C | - | 150 °C | °C |
| Mounting Type | - | - | - | Surface Mount | - |
| Package / Case | - | - | - | SOT-143B | - |
Key Features
- Low noise, high breakdown RF transistor suitable for high-speed applications.
- AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments.
- Minimum noise figure (NFmin) of 0.7 dB at 900 MHz.
- Maximum stable gain of 21.5 dB at 900 MHz.
- 11 GHz fT silicon technology.
- Surface mount package (SOT143R) for easy integration into various designs.
Applications
- Applications requiring high supply voltages and high breakdown voltages.
- Broadband amplifiers up to 2 GHz.
- Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications.
- ISM band oscillators.
Q & A
- What is the BFU550XRR215 transistor used for? The BFU550XRR215 is used in high-speed, low-noise RF applications, including broadband amplifiers, ISM band amplifiers, and oscillators.
- What is the maximum collector-emitter breakdown voltage of the BFU550XRR215? The maximum collector-emitter breakdown voltage is 12 V.
- What is the typical noise figure of the BFU550XRR215 at 900 MHz? The typical noise figure is 0.75 dB at 900 MHz.
- What is the maximum stable gain of the BFU550XRR215 at 900 MHz? The maximum stable gain is 21.5 dB at 900 MHz.
- What is the transition frequency (fT) of the BFU550XRR215? The transition frequency is 11 GHz.
- What is the maximum collector current (Ic) of the BFU550XRR215? The maximum collector current is 50 mA.
- What is the operating temperature range of the BFU550XRR215? The operating temperature range is from -40 °C to 150 °C.
- Is the BFU550XRR215 AEC-Q101 qualified? Yes, the BFU550XRR215 is AEC-Q101 qualified.
- What package type does the BFU550XRR215 use? The BFU550XRR215 uses the SOT143R package.
- What are some common applications of the BFU550XRR215? Common applications include broadband amplifiers, low noise amplifiers for ISM applications, and ISM band oscillators.
