BUK98150-55A,135
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NXP USA Inc. BUK98150-55A,135

Manufacturer No:
BUK98150-55A,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 5.5A SOT-223
Delivery:
Payment:
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Product Introduction

Overview

The BUK98150-55A,135 is a high-performance power MOSFET manufactured by NXP USA Inc., now part of Nexperia. This device is designed to provide high efficiency and reliability in various power management applications. It features advanced technology that minimizes losses and maximizes performance, making it an ideal choice for designers seeking robust and efficient power solutions.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)55 V
VGS (Gate-Source Voltage)±20 V
RDS(on) (On-State Drain-Source Resistance)1.35 mΩ (typical at VGS = 10 V, ID = 50 A)
ID (Continuous Drain Current)150 A
Ptot (Total Power Dissipation)390 W
TJ (Junction Temperature)-55 to 175°C
PackageLFPAK56 (PowerSO8)

Key Features

  • High efficiency due to low on-state resistance (RDS(on)) of 1.35 mΩ.
  • High continuous drain current (ID) of 150 A.
  • Advanced LFPAK56 (PowerSO8) package for improved thermal performance.
  • Wide operating junction temperature range from -55°C to 175°C.
  • Low gate charge and low switching losses.

Applications

The BUK98150-55A,135 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and electric vehicle charging.
  • Industrial power systems and renewable energy applications.

Q & A

  1. What is the maximum drain-source voltage of the BUK98150-55A,135?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the typical on-state drain-source resistance (RDS(on)) of this MOSFET?
    The typical RDS(on) is 1.35 mΩ at VGS = 10 V and ID = 50 A.
  3. What is the continuous drain current (ID) rating of this device?
    The continuous drain current (ID) is 150 A.
  4. What is the package type of the BUK98150-55A,135?
    The package type is LFPAK56 (PowerSO8).
  5. What is the operating junction temperature range of this MOSFET?
    The operating junction temperature range is from -55°C to 175°C.
  6. What are some common applications for the BUK98150-55A,135?
    Common applications include power supplies, motor control systems, automotive systems, and industrial power systems.
  7. What is the total power dissipation (Ptot) of this device?
    The total power dissipation (Ptot) is 390 W.
  8. Is the BUK98150-55A,135 suitable for high-frequency switching applications?
    Yes, it is suitable due to its low gate charge and low switching losses.
  9. Where can I find detailed specifications for the BUK98150-55A,135?
    Detailed specifications can be found in the full data sheet available from Nexperia's local sales office or on their official website.
  10. What is the gate-source voltage (VGS) rating of this MOSFET?
    The gate-source voltage (VGS) rating is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:137mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-73
Package / Case:TO-261-4, TO-261AA
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Same Series
BUK98150-55A/CUF
BUK98150-55A/CUF
MOSFET N-CH 55V 5.5A SOT223

Similar Products

Part Number BUK98150-55A,135 BUK98150-55,135
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V
Rds On (Max) @ Id, Vgs 137mOhm @ 5A, 10V 150mOhm @ 5A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 5 V -
Vgs (Max) ±15V ±10V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 25 V 330 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 8W (Tc) 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-73 SC-73
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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