Overview
The STF13N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is part of a series that includes the STB13N80K5, STP13N80K5, and STW13N80K5, each available in different package types. The STF13N80K5, specifically, is packaged in the TO-220FP format. It is engineered to provide superior power density and high efficiency, making it ideal for applications requiring low on-resistance and ultra-low gate charge.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| Drain Current (ID) Continuous at TC = 25 °C | 12 | A |
| Drain Current (ID) Continuous at TC = 100 °C | 7.6 | A |
| Drain Current (IDM) Pulsed | 48 | A |
| Total Dissipation (PTOT) at TC = 25 °C | 35 | W |
| Gate-Source Voltage (VGS) | ±30 | V |
| Static Drain-Source On-Resistance (RDS(on)) | 0.45 Ω (max.) | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 to 5 | V |
| Operating Junction Temperature Range (Tj) | -55 to 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 3.57 | °C/W |
Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
The STF13N80K5 is suitable for various switching applications, including those that require high power density and efficiency. It is particularly useful in designs where low on-resistance and minimal gate charge are critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the STF13N80K5?
The maximum drain-source voltage (VDS) is 800 V. - What is the continuous drain current (ID) at 25 °C for the STF13N80K5?
The continuous drain current (ID) at 25 °C is 12 A. - What is the typical on-resistance (RDS(on)) of the STF13N80K5?
The typical on-resistance (RDS(on)) is 0.37 Ω, with a maximum of 0.45 Ω. - What are the package options for the STF13N80K5?
The STF13N80K5 is available in the TO-220FP package. - What is the gate-source voltage (VGS) range for the STF13N80K5?
The gate-source voltage (VGS) range is ±30 V. - What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 3.57 °C/W. - Is the STF13N80K5 100% avalanche tested?
Yes, the STF13N80K5 is 100% avalanche tested. - What are the key features of the MDmesh™ K5 technology used in the STF13N80K5?
The key features include industry’s lowest RDS(on) x area, industry’s best FoM, ultra-low gate charge, and Zener protection. - What are the typical applications for the STF13N80K5?
The STF13N80K5 is typically used in switching applications that require high power density and efficiency. - What is the operating junction temperature range for the STF13N80K5?
The operating junction temperature range is -55 to 150 °C.
