STF14N80K5
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STMicroelectronics STF14N80K5

Manufacturer No:
STF14N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 12A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF14N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This technology is based on a proprietary vertical structure, enhancing the device's performance and efficiency. The MOSFET is housed in a TO-220FP package, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
On-Resistance (Rds(on))0.400 Ω (typ.)
Continuous Drain Current (Id)12 A
Power Dissipation (Pd)30 W (Tc)
PackageTO-220FP

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.400 Ω (typ.), reducing power losses and improving efficiency.
  • Continuous drain current of 12 A, supporting high current requirements.
  • MDmesh™ K5 technology for enhanced performance and reliability.
  • TO-220FP package for easy mounting and thermal management.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Aerospace and defense applications requiring high reliability.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the voltage rating of the STF14N80K5 MOSFET?
    The voltage rating of the STF14N80K5 MOSFET is 800 V.
  2. What is the typical on-resistance of the STF14N80K5?
    The typical on-resistance (Rds(on)) of the STF14N80K5 is 0.400 Ω.
  3. What is the continuous drain current of the STF14N80K5?
    The continuous drain current (Id) of the STF14N80K5 is 12 A.
  4. In what package is the STF14N80K5 available?
    The STF14N80K5 is available in a TO-220FP package.
  5. What technology is used in the STF14N80K5?
    The STF14N80K5 uses MDmesh™ K5 technology.
  6. What are some common applications for the STF14N80K5?
    Common applications include power supplies, motor control systems, industrial automation, aerospace, and renewable energy systems.
  7. What is the power dissipation capability of the STF14N80K5?
    The power dissipation (Pd) capability of the STF14N80K5 is 30 W (Tc).
  8. Is the STF14N80K5 suitable for high-power applications?
    Yes, the STF14N80K5 is designed for high-power applications due to its high voltage and current ratings.
  9. Where can I find detailed specifications for the STF14N80K5?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key.
  10. What are the benefits of using MDmesh™ K5 technology in the STF14N80K5?
    The MDmesh™ K5 technology enhances the device's performance, reduces power losses, and improves reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:445mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STFI14N80K5
STFI14N80K5
MOSFET N-CH 800V 12A I2PAKFP

Similar Products

Part Number STF14N80K5 STF17N80K5 STF15N80K5 STF10N80K5 STF13N80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 14A (Tc) 14A (Tc) 9A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 445mOhm @ 6A, 10V 340mOhm @ 7A, 10V 375mOhm @ 7A, 10V 600mOhm @ 4.5A, 10V 450mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 250µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 26 nC @ 10 V 32 nC @ 10 V 22 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 100 V 866 pF @ 100 V 1100 pF @ 100 V 635 pF @ 100 V 870 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 35W (Tc) 30W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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