Overview
The PSMN0R9-25YLDX is a high-performance N-channel MOSFET from Nexperia USA Inc., designed for use in a wide range of applications requiring high efficiency and reliability. This MOSFET utilizes Nexperia's NextPowerS3 technology, which ensures ultra-low on-resistance and high system efficiency, especially at higher switching frequencies.
It is packaged in the LFPAK56 (Power-SO8) package, which is known for its high reliability and thermal performance. The device is qualified to operate up to 175°C, making it suitable for demanding industrial, automotive, and consumer electronics applications.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | PSMN0R9-25YLDX |
| Package | LFPAK56; Power-SO8 (SOT669) |
| Channel Type | N-channel |
| VDS [max] | 25 V |
| RDSon [max] @ VGS = 10 V | 0.85 mΩ |
| RDSon [max] @ VGS = 4.5 V; @25°C | 1.2 mΩ |
| Tj [max] | 175°C |
| ID [max] | 300 A |
| QGD [typ] | 9.9 nC |
| QG(tot) [typ] @ VGS = 4.5 V | 41.5 nC |
| QG(tot) [typ] @ VGS = 10 V | 89.8 nC |
| Ptot [max] | 238 W |
| Qr [typ] | 54.4 nC |
| VGSth [typ] | 1.73 V |
| Automotive Qualified | No |
| Ciss [typ] | 6721 pF |
| Coss [typ] | 2390 pF |
| Release Date | 2016-03-22 |
Key Features
- Ultra low QG, QGD, and QOSS for high system efficiency, especially at higher switching frequencies.
- 100% Avalanche tested at I(AS) = 190 A, ensuring robustness and reliability.
- Utilizes NextPowerS3 technology for ultra-low on-resistance (RDSon) and low parasitic inductance.
- High reliability Power-SO8 package qualified to 175°C.
- Optimized for 4.5V gate drive.
Applications
- DC-to-DC converters.
- Lithium-ion battery protection.
- Load switching.
- Power OR-ing.
- Server power supplies.
- Sync rectifier applications.
- Automotive and industrial electronics.
- Consumer and mobile electronics.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN0R9-25YLDX?
The maximum drain-source voltage (VDS) is 25 V.
- What is the on-resistance (RDSon) at VGS = 10 V?
The on-resistance (RDSon) at VGS = 10 V is 0.85 mΩ.
- What is the maximum junction temperature (Tj)?
The maximum junction temperature (Tj) is 175°C.
- What is the maximum continuous drain current (ID)?
The maximum continuous drain current (ID) is 300 A.
- Is the PSMN0R9-25YLDX automotive qualified?
No, the PSMN0R9-25YLDX is not automotive qualified.
- What is the typical gate-source threshold voltage (VGSth)?
The typical gate-source threshold voltage (VGSth) is 1.73 V.
- What are the key applications of the PSMN0R9-25YLDX?
The key applications include DC-to-DC converters, lithium-ion battery protection, load switching, power OR-ing, and server power supplies.
- What technology does the PSMN0R9-25YLDX use?
The PSMN0R9-25YLDX uses Nexperia's NextPowerS3 technology.
- What is the package type of the PSMN0R9-25YLDX?
The package type is LFPAK56 (Power-SO8) or SOT669.
- Is the PSMN0R9-25YLDX RoHS compliant?
