Overview
The BUK9K6R2-40E,115 is a dual N-channel TrenchMOS logic level MOSFET produced by Nexperia USA Inc. This component is housed in an LFPAK56D (Dual Power-SO8) package, leveraging TrenchMOS technology to enhance performance. It is designed to offer high efficiency and reliability in various power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Configuration | Dual N-channel |
| Package | LFPAK56D (Dual Power-SO8) |
| Drain-Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Id) | 40 A |
| Gate-Source Threshold Voltage (Vgs(th)) | 1.5 - 3.5 V |
| On-State Resistance (Rds(on)) | Typically 1.8 mΩ at Vgs = 10 V, Id = 20 A |
| Operating Temperature Range | -55°C to 175°C |
Key Features
- TrenchMOS Technology: Enhances performance by reducing on-state resistance and increasing switching speed.
- Logic Level Gate Drive: Compatible with standard logic level gate drive signals, making it easy to integrate into various systems.
- High Current Capability: Supports continuous drain current of up to 40 A per channel.
- Low On-State Resistance: Typically 1.8 mΩ at Vgs = 10 V, Id = 20 A, reducing power losses and heat generation.
- Compact LFPAK56D Package: Dual Power-SO8 package offers a balance between power handling and space efficiency.
Applications
- Power Management: Suitable for DC-DC converters, power supplies, and voltage regulators.
- Motor Control: Used in motor drive applications, including industrial automation and automotive systems.
- Switching Applications: Ideal for high-frequency switching in power electronics, such as inverter circuits and switching power supplies.
- Automotive Systems: Applicable in automotive electronics for functions like battery management and electric motor control.
Q & A
- What is the configuration of the BUK9K6R2-40E,115 MOSFET?
The BUK9K6R2-40E,115 is a dual N-channel MOSFET.
- What is the maximum drain-source voltage (Vds) for this MOSFET?
The maximum drain-source voltage (Vds) is 40 V.
- What is the continuous drain current (Id) rating for this MOSFET?
The continuous drain current (Id) rating is 40 A.
- What is the typical on-state resistance (Rds(on)) of the BUK9K6R2-40E,115?
The typical on-state resistance (Rds(on)) is 1.8 mΩ at Vgs = 10 V, Id = 20 A.
- What is the operating temperature range for this MOSFET?
The operating temperature range is -55°C to 175°C.
- What technology is used in the BUK9K6R2-40E,115 MOSFET?
The BUK9K6R2-40E,115 uses TrenchMOS technology.
- What type of package does the BUK9K6R2-40E,115 come in?
The BUK9K6R2-40E,115 comes in an LFPAK56D (Dual Power-SO8) package.
- Is the BUK9K6R2-40E,115 suitable for automotive applications?
- What are some common applications for the BUK9K6R2-40E,115?
- What is the gate-source threshold voltage (Vgs(th)) range for this MOSFET?
The gate-source threshold voltage (Vgs(th)) range is 1.5 - 3.5 V.
