NTJD4001NT1
  • Share:

onsemi NTJD4001NT1

Manufacturer No:
NTJD4001NT1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 0.25A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTJD4001NT1, produced by onsemi, is a dual N-channel small signal MOSFET packaged in the SC-88 (SOT-363) case. This device is designed for low-power applications and offers several key advantages, including a small footprint, low gate charge for fast switching, and ESD protection. The NTJD4001NT1 is also Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic devices.

Key Specifications

Parameter Symbol Value Units
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 250 mA
Continuous Drain Current (TA = 85°C) ID 180 mA
Power Dissipation (TA = 25°C) PD 272 mW
Pulsed Drain Current (t = 10 μs) IDM 600 mA
Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C
Source Current (Body Diode) IS 250 mA
Lead Temperature for Soldering Purposes TL 260 °C
Junction-to-Ambient Thermal Resistance RθJA 458 °C/W
Junction-to-Lead Thermal Resistance RθJL 252 °C/W

Key Features

  • Low Gate Charge for Fast Switching
  • Small Footprint − 30% Smaller than TSOP−6
  • ESD Protected Gate
  • AEC Q101 Qualified − NVTJD4001N
  • Pb-free and RoHS Compliant

Applications

  • Low Side Load Switch
  • Lithium-Ion Battery Supplied Devices − Cell Phones, PDAs, Digital Still Cameras (DSC)
  • Buck Converters
  • Level Shifts

Q & A

  1. What is the maximum drain-to-source voltage of the NTJD4001NT1?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 250 mA at 25°C and 180 mA at 85°C.

  3. What is the power dissipation at 25°C?

    The power dissipation (PD) at 25°C is 272 mW.

  4. What is the pulsed drain current for a 10 μs pulse width?

    The pulsed drain current (IDM) for a 10 μs pulse width is 600 mA.

  5. What are the operating and storage temperature ranges?

    The operating and storage temperature ranges are from −55°C to 150°C.

  6. Is the NTJD4001NT1 ESD protected?
  7. Is the NTJD4001NT1 Pb-free and RoHS compliant?
  8. What are some typical applications of the NTJD4001NT1?

    Typical applications include low side load switches, lithium-ion battery supplied devices, buck converters, and level shifts.

  9. What is the junction-to-ambient thermal resistance?

    The junction-to-ambient thermal resistance (RθJA) is 458 °C/W.

  10. What is the package type of the NTJD4001NT1?

    The package type is SC-88 (SOT-363).

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:250mA
Rds On (Max) @ Id, Vgs:1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:33pF @ 5V
Power - Max:272mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
0 Remaining View Similar

In Stock

-
89

Please send RFQ , we will respond immediately.

Same Series
NTJD4001NT1G
NTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SOT-363
NVTJD4001NT1G
NVTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SC-88
NTJD4001NT1
NTJD4001NT1
MOSFET 2N-CH 30V 0.25A SOT363
NVTJD4001NT2G
NVTJD4001NT2G
MOSFET 2N-CH 30V 0.25A SC-88

Similar Products

Part Number NTJD4001NT1 NTJD4001NT1G NTJD4401NT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 20V
Current - Continuous Drain (Id) @ 25°C 250mA 250mA 630mA
Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V 1.5Ohm @ 10mA, 4V 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 100µA 1.5V @ 100µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V 1.3nC @ 5V 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V 33pF @ 5V 46pF @ 20V
Power - Max 272mW 272mW 270mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

Related Product By Categories

FDS89141
FDS89141
onsemi
MOSFET 2N-CH 100V 3.5A 8SOIC
FDPC8012S
FDPC8012S
onsemi
MOSFET 2N-CH 25V 13A/26A PWR CLP
BUK7K5R1-30E,115
BUK7K5R1-30E,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 40A LFPAK56D
2N7002DW-7-F
2N7002DW-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT-363
NX3008PBKS,115
NX3008PBKS,115
Nexperia USA Inc.
MOSFET 2P-CH 30V 0.2A 6TSSOP
FDG1024NZ
FDG1024NZ
onsemi
MOSFET 2N-CH 20V 1.2A SC70-6
FDS8858CZ
FDS8858CZ
onsemi
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC
NTZD5110NT1G
NTZD5110NT1G
onsemi
MOSFET 2N-CH 60V 294MA SOT563
BUK7K15-80EX
BUK7K15-80EX
Nexperia USA Inc.
MOSFET 2 N-CH 80V 23A LFPAK56D
NTZD3154NT5G
NTZD3154NT5G
onsemi
MOSFET 2N-CH 20V 0.54A SOT563
NVMFD5852NLT1G
NVMFD5852NLT1G
onsemi
MOSFET 2N-CH 40V 15A SO8FL
BSS8402DW-7-G
BSS8402DW-7-G
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK