FDS4935BZ
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onsemi FDS4935BZ

Manufacturer No:
FDS4935BZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 30V 6.9A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS4935BZ is a dual P-Channel PowerTrench® MOSFET produced by onsemi. This component is designed to enhance the efficiency of DC/DC converters, whether used in synchronous or conventional configurations. Although the product is currently obsolete and not in production, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
ID (Drain Current) 6.9 A
RDS(ON) (On-Resistance) 22 mΩ @ 10V, 6.9A
VGS(TH) (Threshold Voltage) 1.9 V @ 250μA
PD (Power Dissipation) 900 mW
Package SOIC-8

Key Features

The FDS4935BZ features onsemi's PowerTrench technology, which enhances the component's performance by reducing on-resistance and increasing efficiency. Key features include:

  • Dual P-Channel configuration for improved system design flexibility.
  • Low on-resistance (RDS(ON)) of 22 mΩ at 10V and 6.9A, contributing to higher efficiency in DC/DC converters.
  • Compact SOIC-8 package, suitable for surface mount applications.
  • RoHS compliance, ensuring environmental sustainability.

Applications

The FDS4935BZ is primarily used in DC/DC converters, both synchronous and conventional, to improve overall system efficiency. Other potential applications include:

  • Power management systems in electronic devices.
  • Switching power supplies.
  • Motor control circuits.
  • General-purpose switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDS4935BZ?

    30 V.

  2. What is the maximum drain current (ID) of the FDS4935BZ?

    6.9 A.

  3. What is the on-resistance (RDS(ON)) of the FDS4935BZ?

    22 mΩ @ 10V, 6.9A.

  4. What is the threshold voltage (VGS(TH)) of the FDS4935BZ?

    1.9 V @ 250μA.

  5. What package type is used for the FDS4935BZ?

    SOIC-8.

  6. Is the FDS4935BZ RoHS compliant?
  7. What is the primary application of the FDS4935BZ?

    The primary application is in DC/DC converters to improve efficiency.

  8. Is the FDS4935BZ still in production?

    No, the FDS4935BZ is obsolete and not in production.

  9. What technology is used in the FDS4935BZ?

    onsemi's PowerTrench technology.

  10. What are some other potential applications of the FDS4935BZ?

    Power management systems, switching power supplies, motor control circuits, and general-purpose switching applications.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:6.9A
Rds On (Max) @ Id, Vgs:22mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1360pF @ 15V
Power - Max:900mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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In Stock

$0.91
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