Overview
The 2N7002BKV,115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is part of the TrenchMOS family and is packaged in an ultra-small SOT666 Surface-Mounted Device (SMD) plastic package. It is designed for high efficiency and reliability in various electronic applications.
Key Specifications
| Attribute | Value |
|---|---|
| FET Type | Dual N-Channel |
| Drain-to-Source Voltage (Vdss) | 60V |
| Drain-Source On Resistance (Rds(on)) | 1.6Ω @ 10V, 500mA |
| Rated Power Dissipation | 350mW |
| Gate Charge (Qg) | 0.6nC @ 4.5V |
| Turn-on Delay Time | 5ns |
| Turn-off Delay Time | 12ns |
| Rise Time | 6ns |
| Fall Time | 7ns |
| Operating Temperature Range | -55°C to +150°C |
| Gate Source Threshold Voltage (Vgs(th)) | 1.6V @ 250µA |
| Technology | TrenchMOS |
| Input Capacitance (Ciss) | 50pF @ 10V |
| Package Style | SOT-666 |
| Mounting Method | Surface Mount |
Key Features
- Ultra-small SOT666 package, ideal for space-constrained designs.
- Low on-resistance (Rds(on)) of 1.6Ω, enhancing efficiency and reducing power losses.
- High drain-to-source voltage (Vdss) of 60V, suitable for a wide range of applications.
- Low gate charge (Qg) of 0.6nC, facilitating fast switching times.
- Wide operating temperature range from -55°C to +150°C, ensuring reliability in diverse environments.
- TrenchMOS technology for improved performance and efficiency.
- ROHS3 compliant, ensuring environmental sustainability.
Applications
The 2N7002BKV,115 is versatile and can be used in various applications across different industries, including:
- Automotive systems: For power management and control in vehicles.
- Industrial automation: In motor control, power supplies, and other industrial equipment.
- Consumer electronics: In devices such as smartphones, tablets, and laptops.
- Power management: In DC-DC converters, power supplies, and battery management systems.
- Computing and data storage: In servers, data centers, and storage devices.
Q & A
- What is the drain-to-source voltage (Vdss) of the 2N7002BKV,115?
The drain-to-source voltage (Vdss) is 60V.
- What is the maximum drain-source on-resistance (Rds(on)) of the 2N7002BKV,115?
The maximum drain-source on-resistance (Rds(on)) is 1.6Ω at 10V and 500mA.
- What is the rated power dissipation of the 2N7002BKV,115?
The rated power dissipation is 350mW.
- What is the gate charge (Qg) of the 2N7002BKV,115?
The gate charge (Qg) is 0.6nC at 4.5V.
- What is the operating temperature range of the 2N7002BKV,115?
The operating temperature range is from -55°C to +150°C.
- What package style does the 2N7002BKV,115 use?
The package style is SOT-666.
- Is the 2N7002BKV,115 ROHS compliant?
Yes, the 2N7002BKV,115 is ROHS3 compliant.
- What technology is used in the 2N7002BKV,115?
The 2N7002BKV,115 uses TrenchMOS technology.
- What is the input capacitance (Ciss) of the 2N7002BKV,115?
The input capacitance (Ciss) is 50pF at 10V.
- What are the typical applications of the 2N7002BKV,115?
The 2N7002BKV,115 is used in automotive, industrial, consumer electronics, power management, and computing applications.
