Overview
The STL8DN6LF6AG is a dual N-channel Power MOSFET developed by STMicroelectronics using the STripFET F6 technology. This device features a new trench gate structure, resulting in very low on-resistance (RDS(on)) across all packages. It is designed for high-performance applications, particularly in the automotive sector, and is AEC-Q101 qualified. The MOSFET is packaged in a PowerFLAT 5x6 double island WF type R package, which enhances thermal performance and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 60 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Continuous drain current (ID) at TC = 25 °C | 32 | A |
| Continuous drain current (ID) at TC = 100 °C | 23 | A |
| Pulsed drain current (IDM) | 38 / 128 | A |
| Total power dissipation (PTOT) at TC = 25 °C | 55 | W |
| Thermal resistance, junction-to-case (RthJC) | 2.7 | °C/W |
| On-resistance (RDS(on)) max. | 27 mΩ | mΩ |
| Total gate charge (Qg) | 27 nC | nC |
| Storage temperature range (Tstg) | -55 to 175 | °C |
Key Features
- AEC-Q101 qualified for automotive applications
- Very low on-resistance (RDS(on))
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package for improved soldering and inspection
Applications
The STL8DN6LF6AG is primarily used in switching applications, particularly in the automotive sector. Its high performance, low on-resistance, and robust avalanche characteristics make it suitable for a variety of power management and control systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL8DN6LF6AG?
The maximum drain-source voltage (VDS) is 60 V. - What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 32 A. - What is the typical on-resistance (RDS(on)) of the STL8DN6LF6AG?
The typical on-resistance (RDS(on)) is 27 mΩ. - Is the STL8DN6LF6AG AEC-Q101 qualified?
Yes, the STL8DN6LF6AG is AEC-Q101 qualified for automotive applications. - What is the total gate charge (Qg) of the STL8DN6LF6AG?
The total gate charge (Qg) is 27 nC. - What is the thermal resistance, junction-to-case (RthJC), of the STL8DN6LF6AG?
The thermal resistance, junction-to-case (RthJC), is 2.7 °C/W. - What are the primary applications of the STL8DN6LF6AG?
The primary applications are in switching, particularly in the automotive sector. - What is the storage temperature range (Tstg) of the STL8DN6LF6AG?
The storage temperature range (Tstg) is -55 to 175 °C. - What package type is used for the STL8DN6LF6AG?
The package type is PowerFLAT 5x6 double island WF type R. - What is the maximum pulsed drain current (IDM) of the STL8DN6LF6AG?
The maximum pulsed drain current (IDM) is 38 A or 128 A under different conditions.
