NX3020NAKS,115
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Nexperia USA Inc. NX3020NAKS,115

Manufacturer No:
NX3020NAKS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 180MA 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3020NAKS,115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is part of Nexperia’s extensive portfolio of MOSFETs, known for their high efficiency and reliability. The NX3020NAKS is packaged in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. This device is designed for various applications requiring low power consumption and high-speed switching.

Key Specifications

Parameter Value Unit
Type Dual N-channel enhancement mode FET
Package SOT363 (SC-88)
VDS [max] 30 V
VGS [max] 20 V
RDSon [max] @ VGS = 10 V 4.5 Ω
RDSon [max] @ VGS = 4.5 V; @25°C 5.2 Ω
RDSon [max] @ VGS = 2.5 V 13 Ω
VGS(th) [typ] 1.5 V @ 250µA
ID [max] 0.18 A
Ptot [max] 375 mW
Tj [max] 150 °C
Ciss [typ] 13 pF @ 10V
Coss [typ] 2.6 pF
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Very fast switching: Ideal for high-speed applications.
  • Trench MOSFET technology: Enhances performance and efficiency.
  • ESD protection: Built-in protection against electrostatic discharge.
  • Low threshold voltage: Facilitates easier gate control.
  • Logic Level Gate: Compatible with logic level signals.
  • Small package size: SOT363 (SC-88) package for compact designs.

Applications

  • Relay driver: Suitable for driving relays in various systems.
  • High-speed line driver: Ideal for high-speed data transmission lines.
  • Low-side load switch: Used in load switching applications requiring low power consumption.
  • Switching circuits: General-purpose switching in electronic circuits.
  • Automotive and industrial systems: Applicable in automotive, industrial, and consumer electronics due to its robust design and efficiency.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3020NAKS?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the maximum gate-source voltage (VGS) of the NX3020NAKS?

    The maximum gate-source voltage (VGS) is 20 V.

  3. What is the typical threshold voltage (VGS(th)) of the NX3020NAKS?

    The typical threshold voltage (VGS(th)) is 1.5 V at 250µA.

  4. What is the maximum continuous drain current (ID) of the NX3020NAKS?

    The maximum continuous drain current (ID) is 180 mA.

  5. What is the maximum total power dissipation (Ptot) of the NX3020NAKS?

    The maximum total power dissipation (Ptot) is 375 mW.

  6. What is the operating temperature range of the NX3020NAKS?

    The operating temperature range is from -55°C to 150°C (Tj).

  7. Is the NX3020NAKS RoHS compliant?

    Yes, the NX3020NAKS is lead-free and RoHS compliant.

  8. What is the moisture sensitivity level (MSL) of the NX3020NAKS?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  9. What are some common applications of the NX3020NAKS?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and general-purpose switching circuits.

  10. What technology is used in the NX3020NAKS?

    The NX3020NAKS uses Trench MOSFET technology.

  11. What is the package type of the NX3020NAKS?

    The package type is SOT363 (SC-88), a 6-pin TSSOP package.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:180mA
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:13pF @ 10V
Power - Max:375mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number NX3020NAKS,115 NX3020NAKV,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Not For New Designs
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 180mA 200mA
Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.44nC @ 4.5V 0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 13pF @ 10V 13pF @ 10V
Power - Max 375mW 375mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 SOT-563, SOT-666
Supplier Device Package 6-TSSOP SOT-666

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