STL76DN4LF7AG
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STMicroelectronics STL76DN4LF7AG

Manufacturer No:
STL76DN4LF7AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 40A PWRFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL76DN4LF7AG is a dual N-channel Power MOSFET produced by STMicroelectronics. It utilizes the advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This technology results in very low on-state resistance, making the MOSFET highly efficient for various power management applications. The component is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.

Key Specifications

ParameterValue
Drain-Source Voltage (VDS)40 V
On-State Resistance (RDS(on))6 mΩ (max.)
Drain Current (ID)40 A
QualificationAEC-Q101 qualified

Key Features

  • Utilizes STripFET™ F7 technology with an enhanced trench gate structure for very low on-state resistance.
  • Among the lowest RDS(on) on the market, enhancing efficiency and performance.
  • Excellent figure of merit (FoM) for optimal power handling.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding applications.

Applications

The STL76DN4LF7AG is suitable for a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
  • Power supplies: Its low on-state resistance makes it efficient for use in power supply units.
  • Motor control: It can be used in motor control circuits due to its high current handling capability.
  • Industrial power management: Suitable for industrial applications requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STL76DN4LF7AG? The maximum drain-source voltage is 40 V.
  2. What is the typical on-state resistance of the STL76DN4LF7AG? The typical on-state resistance is 6 mΩ (max.).
  3. What is the maximum drain current of the STL76DN4LF7AG? The maximum drain current is 40 A.
  4. Is the STL76DN4LF7AG AEC-Q101 qualified? Yes, it is AEC-Q101 qualified.
  5. What technology does the STL76DN4LF7AG use? It uses STripFET™ F7 technology with an enhanced trench gate structure.
  6. What are some typical applications of the STL76DN4LF7AG? It is used in automotive systems, power supplies, motor control, and industrial power management.
  7. Why is the STL76DN4LF7AG considered efficient? It is considered efficient due to its very low on-state resistance and excellent figure of merit (FoM).
  8. Where can I find detailed specifications for the STL76DN4LF7AG? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like TME.
  9. What is the significance of AEC-Q101 qualification? AEC-Q101 qualification ensures the component meets the stringent requirements for reliability and performance in automotive and other demanding environments.
  10. Can the STL76DN4LF7AG be used in high-current applications? Yes, it can be used in high-current applications due to its ability to handle up to 40 A of drain current.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Rds On (Max) @ Id, Vgs:6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:956pF @ 25V
Power - Max:71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PowerFlat™ (5x6)
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