NTLLD4901NFTWG
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onsemi NTLLD4901NFTWG

Manufacturer No:
NTLLD4901NFTWG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NTLLD4901NFTWG is a dual-protected low-side smart, discrete device produced by onsemi. This component is designed with advanced features to cater to specific application needs, particularly in motor driver applications. It combines a standard 40V gate level power MOSFET with integrated temperature and current limit protections, enhancing reliability and performance.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
ID (Continuous Drain Current) - A
RDS(on) (On-Resistance) - Ω
VGS (Gate-Source Voltage) 40 V
TJ (Junction Temperature) -40 to +150 °C
Package Type - -

Note: Specific values for some parameters are not provided in the available sources and may require consulting the official datasheet or contacting onsemi directly.

Key Features

  • Dual protection with temperature and current limit
  • Standard 40V gate level power MOSFET
  • Leading on-resistance for enhanced performance in motor driver applications
  • Integrated protections to enhance reliability and prevent device damage

Applications

  • Motor driver applications
  • Power management systems requiring low-side switching
  • Automotive and industrial control systems
  • Any application needing robust and reliable MOSFET performance with built-in protections

Q & A

  1. What is the NTLLD4901NFTWG?

    The NTLLD4901NFTWG is a dual-protected low-side smart, discrete device produced by onsemi, featuring a 40V gate level power MOSFET with integrated temperature and current limit protections.

  2. What are the key features of the NTLLD4901NFTWG?

    The key features include dual protection with temperature and current limit, a standard 40V gate level power MOSFET, and leading on-resistance for motor driver applications.

  3. What are the typical applications for the NTLLD4901NFTWG?

    Typical applications include motor driver applications, power management systems, automotive and industrial control systems, and any application needing robust and reliable MOSFET performance with built-in protections.

  4. What is the significance of the integrated temperature and current limit protections?

    The integrated protections help in preventing device damage due to overheating or excessive current, thus enhancing the reliability and lifespan of the device.

  5. What is the maximum drain-source voltage (VDS) for the NTLLD4901NFTWG?

    The maximum drain-source voltage (VDS) is 40V.

  6. What is the operating junction temperature range for the NTLLD4901NFTWG?

    The operating junction temperature range is -40°C to +150°C.

  7. Where can I find detailed specifications for the NTLLD4901NFTWG?

    Detailed specifications can be found in the official datasheet available on onsemi's website or through authorized distributors like Mouser Electronics.

  8. Is the NTLLD4901NFTWG suitable for high-power applications?

    Yes, it is suitable for high-power applications, especially those requiring robust and reliable low-side switching with integrated protections.

  9. Can the NTLLD4901NFTWG be used in automotive applications?

    Yes, it can be used in automotive applications due to its robust design and integrated protections.

  10. How does the NTLLD4901NFTWG compare to other MOSFETs in terms of on-resistance?

    The NTLLD4901NFTWG features leading on-resistance, making it a superior choice for applications requiring high efficiency and low power loss.

  11. What kind of package does the NTLLD4901NFTWG come in?

    The specific package type is not detailed in the available sources; refer to the official datasheet for this information.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:5.5A, 6.3A
Rds On (Max) @ Id, Vgs:17.4mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:605pF @ 15V
Power - Max:800mW, 810mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-WDFN Exposed Pad
Supplier Device Package:8-WDFN (3x3)
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Similar Products

Part Number NTLLD4901NFTWG NTLLD4951NFTWG
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 5.5A, 6.3A 5.5A, 6.3A
Rds On (Max) @ Id, Vgs 17.4mOhm @ 9A, 10V 17.4mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 605pF @ 15V 605pF @ 15V
Power - Max 800mW, 810mW 800mW, 810mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-WDFN Exposed Pad 8-WDFN Exposed Pad
Supplier Device Package 8-WDFN (3x3) 8-WDFN (3x3)

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