Overview
The NTUD3170NZT5G is a dual N-channel small signal MOSFET produced by onsemi. This device is packaged in the ultra-small SOT-963 package, measuring 1.0 mm x 1.0 mm, making it ideal for extremely thin environments such as portable electronics. It features a low RDS(ON) solution, which enhances its performance in power management and general-purpose interfacing applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Breakdown Voltage | VDSS | 20 | V |
| Gate-to-Source Voltage | VGS | ±8 | V |
| Continuous Drain Current (TA = 25°C) | ID | 220 | mA |
| Continuous Drain Current (TA = 85°C) | ID | 160 | mA |
| Pulsed Drain Current (tp = 10 μs) | IDM | 800 | mA |
| Power Dissipation (Steady State, TA = 25°C) | PD | 125 | mW |
| Gate Threshold Voltage | VGS(TH) | 0.4 - 1.0 | V |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 100 mA) | RDS(ON) | 0.75 - 1.5 | Ω |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
Key Features
- Dual N-channel MOSFET in an ultra-small SOT-963 package (1.0 mm x 1.0 mm x 0.37 mm)
- Low RDS(ON) solution for enhanced performance
- 1.5 V gate voltage rating
- Ultra-thin profile, suitable for extremely thin environments such as portable electronics
- Pb-free device
- Low gate threshold voltage (0.4 - 1.0 V)
- High forward transconductance (gFS = 0.48 S at VDS = 5.0 V, ID = 125 mA)
Applications
- General-purpose interfacing switch
- Optimized for power management in ultra-portable equipment
- Analog switch applications
Q & A
- What is the package type of the NTUD3170NZT5G?
The NTUD3170NZT5G is packaged in the SOT-963 package, measuring 1.0 mm x 1.0 mm x 0.37 mm.
- What is the maximum drain-to-source breakdown voltage of the NTUD3170NZT5G?
The maximum drain-to-source breakdown voltage (VDSS) is 20 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 220 mA.
- What is the gate threshold voltage range of the NTUD3170NZT5G?
The gate threshold voltage (VGS(TH)) range is 0.4 to 1.0 V.
- What are the typical applications of the NTUD3170NZT5G?
Typical applications include general-purpose interfacing switches, power management in ultra-portable equipment, and analog switch applications.
- Is the NTUD3170NZT5G a Pb-free device?
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) at 25°C is 125 mW.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to 150°C.
- What is the typical on-resistance at VGS = 4.5 V and ID = 100 mA?
The typical on-resistance (RDS(ON)) at VGS = 4.5 V and ID = 100 mA is 0.75 to 1.5 Ω.
- What is the forward transconductance at VDS = 5.0 V and ID = 125 mA?
The forward transconductance (gFS) at VDS = 5.0 V and ID = 125 mA is 0.48 S.
