BSS84V-7-79
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Diodes Incorporated BSS84V-7-79

Manufacturer No:
BSS84V-7-79
Manufacturer:
Diodes Incorporated
Package:
Bulk
Description:
DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84V-7-79 is a dual P-channel MOSFET array produced by Diodes Incorporated. This component is designed for low-power applications where space is limited. It features a compact SOT-23-3 package, making it suitable for a variety of electronic designs that require efficient and reliable switching capabilities.

Key Specifications

ParameterValue
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C130mA
Rds On (Max) @ Id, Vgs10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-3
Power Dissipation (Max)225mW
Vgs (Max)±20V

Key Features

  • Compact SOT-23-3 package for space-efficient designs.
  • Dual P-channel configuration for versatile application in switching circuits.
  • Low on-resistance (Rds On) of 10Ohm @ 100mA, 5V for efficient switching.
  • High drain to source voltage (Vdss) of 50V for robust performance.
  • Wide operating temperature range of -55°C to 150°C.
  • Logic level gate for easy integration with digital circuits.

Applications

The BSS84V-7-79 MOSFET array is suitable for a variety of low-power applications, including:

  • Switching circuits in consumer electronics.
  • Power management in portable devices.
  • Audio and video equipment.
  • Automotive electronics (though not AEC-Q101 qualified for this specific part).
  • General-purpose switching and amplification.

Q & A

  1. What is the configuration of the BSS84V-7-79 MOSFET?
    The BSS84V-7-79 is a dual P-channel MOSFET array.
  2. What is the maximum drain to source voltage (Vdss) of the BSS84V-7-79?
    The maximum Vdss is 50V.
  3. What is the continuous drain current (Id) at 25°C for the BSS84V-7-79?
    The continuous drain current is 130mA.
  4. What is the on-resistance (Rds On) of the BSS84V-7-79?
    The on-resistance is 10Ohm @ 100mA, 5V.
  5. What is the operating temperature range of the BSS84V-7-79?
    The operating temperature range is -55°C to 150°C.
  6. What package type does the BSS84V-7-79 come in?
    The BSS84V-7-79 comes in a SOT-23-3 package.
  7. Is the BSS84V-7-79 AEC-Q101 qualified?
    No, the BSS84V-7-79 is not AEC-Q101 qualified.
  8. What is the maximum power dissipation of the BSS84V-7-79?
    The maximum power dissipation is 225mW.
  9. What is the maximum gate to source voltage (Vgs) for the BSS84V-7-79?
    The maximum Vgs is ±20V.
  10. Is the BSS84V-7-79 suitable for high-power applications?
    No, the BSS84V-7-79 is designed for low-power applications.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:45pF @ 25V
Power - Max:150mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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