BSS84V-7-79
  • Share:

Diodes Incorporated BSS84V-7-79

Manufacturer No:
BSS84V-7-79
Manufacturer:
Diodes Incorporated
Package:
Bulk
Description:
DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84V-7-79 is a dual P-channel MOSFET array produced by Diodes Incorporated. This component is designed for low-power applications where space is limited. It features a compact SOT-23-3 package, making it suitable for a variety of electronic designs that require efficient and reliable switching capabilities.

Key Specifications

ParameterValue
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C130mA
Rds On (Max) @ Id, Vgs10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-3
Power Dissipation (Max)225mW
Vgs (Max)±20V

Key Features

  • Compact SOT-23-3 package for space-efficient designs.
  • Dual P-channel configuration for versatile application in switching circuits.
  • Low on-resistance (Rds On) of 10Ohm @ 100mA, 5V for efficient switching.
  • High drain to source voltage (Vdss) of 50V for robust performance.
  • Wide operating temperature range of -55°C to 150°C.
  • Logic level gate for easy integration with digital circuits.

Applications

The BSS84V-7-79 MOSFET array is suitable for a variety of low-power applications, including:

  • Switching circuits in consumer electronics.
  • Power management in portable devices.
  • Audio and video equipment.
  • Automotive electronics (though not AEC-Q101 qualified for this specific part).
  • General-purpose switching and amplification.

Q & A

  1. What is the configuration of the BSS84V-7-79 MOSFET?
    The BSS84V-7-79 is a dual P-channel MOSFET array.
  2. What is the maximum drain to source voltage (Vdss) of the BSS84V-7-79?
    The maximum Vdss is 50V.
  3. What is the continuous drain current (Id) at 25°C for the BSS84V-7-79?
    The continuous drain current is 130mA.
  4. What is the on-resistance (Rds On) of the BSS84V-7-79?
    The on-resistance is 10Ohm @ 100mA, 5V.
  5. What is the operating temperature range of the BSS84V-7-79?
    The operating temperature range is -55°C to 150°C.
  6. What package type does the BSS84V-7-79 come in?
    The BSS84V-7-79 comes in a SOT-23-3 package.
  7. Is the BSS84V-7-79 AEC-Q101 qualified?
    No, the BSS84V-7-79 is not AEC-Q101 qualified.
  8. What is the maximum power dissipation of the BSS84V-7-79?
    The maximum power dissipation is 225mW.
  9. What is the maximum gate to source voltage (Vgs) for the BSS84V-7-79?
    The maximum Vgs is ±20V.
  10. Is the BSS84V-7-79 suitable for high-power applications?
    No, the BSS84V-7-79 is designed for low-power applications.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:45pF @ 25V
Power - Max:150mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

-
394

Please send RFQ , we will respond immediately.

Same Series
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

STS4DPF20L
STS4DPF20L
STMicroelectronics
MOSFET 2P-CH 20V 4A 8SOIC
IRF7343TRPBF
IRF7343TRPBF
Infineon Technologies
MOSFET N/P-CH 55V 8-SOIC
FDG6321C
FDG6321C
onsemi
MOSFET N/P-CH 25V 500/410MA SC88
BUK7K6R8-40E,115
BUK7K6R8-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
NX3008NBKV,115
NX3008NBKV,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 400MA SOT666
FDMS3669S
FDMS3669S
onsemi
MOSFET 2N-CH 30V 13A/18A POWER56
2N7002DWAQ-7
2N7002DWAQ-7
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 3K
FDS4897AC
FDS4897AC
onsemi
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
FDG6321C-F169
FDG6321C-F169
onsemi
DUAL N & P CHANNEL DIGITAL FET 2
FDS8949-F085
FDS8949-F085
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 6
NTJD4001NT2G
NTJD4001NT2G
onsemi
MOSFET 2N-CH 30V 0.25A SOT363
2N7002DW-7-G
2N7002DW-7-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

BAS21DWA-7
BAS21DWA-7
Diodes Incorporated
DIODE SW DL 2500V 100MA SOT353
BAW56T-7
BAW56T-7
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
BAT54TW-7
BAT54TW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAV21WQ-7-F
BAV21WQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BZT52HC18WFQ-7
BZT52HC18WFQ-7
Diodes Incorporated
DIODE ZENER 18V 375MW SOD123F
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BZX84C11W-7
BZX84C11W-7
Diodes Incorporated
DIODE ZENER 11V 200MW SOT323
BZX84C22W-7
BZX84C22W-7
Diodes Incorporated
DIODE ZENER 22V 200MW SOT323
BSS123ATC
BSS123ATC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74LVC2G34W6-7
74LVC2G34W6-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT26
74LVC1G14Z-7
74LVC1G14Z-7
Diodes Incorporated
IC INVERT SCHMITT 1CH 1IN SOT553