BC847BWQ-13-F
  • Share:

Diodes Incorporated BC847BWQ-13-F

Manufacturer No:
BC847BWQ-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
GENERAL PURPOSE TRANSISTOR SOT32
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BWQ-13-F is a small-signal NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is part of the BC847 series and is packaged in a SOT323 (SC-70) package. It is designed for general-purpose amplifier and switching applications, and it is also suitable for automotive use due to its AEC-Q101 qualification and compliance with specific change control requirements.

The BC847BWQ-13-F is lead-free, RoHS compliant, and halogen and antimony free, making it an environmentally friendly option. It is ideal for automatic insertion and features a complementary PNP type, the BC857BWQ.

Key Specifications

Characteristic Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO - - 50 V IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO - - 45 V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO - - 6 V IE = 100µA
DC Current Gain hFE 200 290 450 - VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage VCE(sat) - - 200 mV IC = 10mA, IB = 0.5mA
Maximum DC Collector Current IC - - 100 mA -
Power Dissipation PD - - 200 mW -
Operating Temperature Range TJ, TSTG -65 - +150 °C -

Key Features

  • Ideally suited for automatic insertion.
  • Complementary PNP type: BC857BWQ.
  • Suitable for switching and AF amplifier applications.
  • Totally lead-free and fully RoHS compliant.
  • Halogen and antimony free, making it a 'Green' device.
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.
  • Package: SOT323 with matte tin plated leads, solderable per MIL-STD-202, Method 208.
  • Moisture sensitivity level 1 per J-STD-020.
  • UL flammability classification rating 94V-0.

Applications

  • General-purpose amplifier applications.
  • Switching applications.
  • Audio frequency (AF) amplifier applications.
  • Automotive applications requiring specific change control and high reliability.

Q & A

  1. What is the package type of the BC847BWQ-13-F transistor?

    The BC847BWQ-13-F transistor is packaged in a SOT323 (SC-70) package.

  2. What are the key applications of the BC847BWQ-13-F transistor?

    The BC847BWQ-13-F is used in general-purpose amplifier, switching, and AF amplifier applications, as well as in automotive applications.

  3. Is the BC847BWQ-13-F transistor RoHS compliant?

    Yes, the BC847BWQ-13-F is totally lead-free and fully RoHS compliant.

  4. What is the maximum collector-emitter breakdown voltage of the BC847BWQ-13-F transistor?

    The maximum collector-emitter breakdown voltage is 45V.

  5. What is the DC current gain range of the BC847BWQ-13-F transistor?

    The DC current gain (hFE) ranges from 200 to 450.

  6. What is the maximum collector current of the BC847BWQ-13-F transistor?

    The maximum DC collector current is 100mA.

  7. Is the BC847BWQ-13-F transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.

  8. What is the operating temperature range of the BC847BWQ-13-F transistor?

    The operating temperature range is from -65°C to +150°C.

  9. What is the power dissipation of the BC847BWQ-13-F transistor?

    The power dissipation is 200mW.

  10. Does the BC847BWQ-13-F transistor have any environmental certifications?

    Yes, it is halogen and antimony free, and it is classified as a 'Green' device.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:300MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.03
15,894

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BUL128D-B
BUL128D-B
STMicroelectronics
TRANS NPN 400V 4A TO220
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
BC857BW/SNX
BC857BW/SNX
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

BAT54V-7
BAT54V-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT563
BAT54SDWQ-7-F
BAT54SDWQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT363
BAS40-04T-7-F-36
BAS40-04T-7-F-36
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
BAW56T-7-G
BAW56T-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BAS16HLPQ-7B
BAS16HLPQ-7B
Diodes Incorporated
FAST SWITCHING DIODE X1-DFN1006-
MURS320-13-F
MURS320-13-F
Diodes Incorporated
DIODE GEN PURP 200V 3A SMC
BAS16W-7-G
BAS16W-7-G
Diodes Incorporated
DIODE GEN PURP SOT323
BZX84C9V1W-7
BZX84C9V1W-7
Diodes Incorporated
DIODE ZENER 9.1V 200MW SOT323
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
MMBT2222AQ-7-F
MMBT2222AQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
MMBT3904-7
MMBT3904-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
74LVC1G07SE-7
74LVC1G07SE-7
Diodes Incorporated
IC BUF NON-INVERT 5.5V SOT353