BCV49TA
  • Share:

Diodes Incorporated BCV49TA

Manufacturer No:
BCV49TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN DARL 60V 0.5A SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCV49TA is a bipolar junction transistor (BJT) produced by Diodes Incorporated. It is an NPN Darlington transistor, designed for high current amplification and switching applications. This transistor is packaged in a surface mount SOT-89-3 format, making it suitable for a variety of modern electronic designs where space is a concern.

Key Specifications

ParameterValue
Transistor TypeNPN Darlington
Collector-Emitter Voltage (Vce)60 V
Collector Current (Ic)500 mA
Transition Frequency (ft)170 MHz
Power Dissipation (Pd)1 W
Package TypeSOT-89-3 (Surface Mount)
ComplianceAEC-Q101

Key Features

  • High current gain due to Darlington configuration
  • High collector-emitter voltage of 60 V
  • High transition frequency of 170 MHz, suitable for high-frequency applications
  • Compact SOT-89-3 surface mount package for space-efficient designs
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments

Applications

The BCV49TA is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Power amplifiers: Its high current gain and transition frequency make it ideal for power amplification tasks.
  • Switching circuits: The transistor's high collector-emitter voltage and current handling capabilities make it suitable for switching applications.
  • Industrial control systems: It can be used in various industrial control and automation systems where high reliability is required.

Q & A

  1. What is the transistor type of the BCV49TA? The BCV49TA is an NPN Darlington transistor.
  2. What is the collector-emitter voltage (Vce) of the BCV49TA? The collector-emitter voltage is 60 V.
  3. What is the maximum collector current (Ic) of the BCV49TA? The maximum collector current is 500 mA.
  4. What is the transition frequency (ft) of the BCV49TA? The transition frequency is 170 MHz.
  5. What is the power dissipation (Pd) of the BCV49TA? The power dissipation is 1 W.
  6. What package type does the BCV49TA use? The BCV49TA is packaged in a SOT-89-3 surface mount format.
  7. Is the BCV49TA AEC-Q101 qualified? Yes, the BCV49TA is AEC-Q101 qualified.
  8. What are some common applications of the BCV49TA? Common applications include automotive systems, power amplifiers, switching circuits, and industrial control systems.
  9. Why is the Darlington configuration beneficial in the BCV49TA? The Darlington configuration provides high current gain, making it suitable for applications requiring significant current amplification.
  10. What is the significance of the SOT-89-3 package? The SOT-89-3 package is compact and suitable for surface mount technology, making it ideal for space-efficient designs.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:1 W
Frequency - Transition:170MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
0 Remaining View Similar

In Stock

$0.14
4,052

Please send RFQ , we will respond immediately.

Similar Products

Part Number BCV49TA BCV29TA BCV46TA BCV47TA BCV48TA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Active Active Obsolete
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 30 V 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1V @ 100µA, 100mA 1V @ 100µA, 100mA 1V @ 100µA, 100mA 1V @ 100µA, 100mA 1V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) - 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 20000 @ 100mA, 5V 10000 @ 100mA, 5V 10000 @ 100mA, 5V 10000 @ 100mA, 5V
Power - Max 1 W 1 W 330 mW 330 mW 1 W
Frequency - Transition 170MHz 150MHz 200MHz 170MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-243AA
Supplier Device Package SOT-89-3 SOT-89-3 SOT-23-3 SOT-23-3 SOT-89-3

Related Product By Categories

BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BFS20,235
BFS20,235
Nexperia USA Inc.
TRANS NPN 20V 0.025A TO236AB
BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BDX53C
BDX53C
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92
BC857BW/SNX
BC857BW/SNX
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

BAT54CTA
BAT54CTA
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
BAS40TW-7-F
BAS40TW-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAS70-04-7-F
BAS70-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
MBR20200CT-G1
MBR20200CT-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 200V TO220
BAW56W-7-G
BAW56W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BAT54LP-7B
BAT54LP-7B
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA 2DFN
BZX84B11-7-F
BZX84B11-7-F
Diodes Incorporated
DIODE ZENER 11V 350MW SOT23
BC817-40-7-F
BC817-40-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BC807-16W-7
BC807-16W-7
Diodes Incorporated
TRANS PNP 45V 0.5A SOT323
BCX5410TA
BCX5410TA
Diodes Incorporated
TRANS NPN 45V 1A SOT89-3
BSS123ATC
BSS123ATC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3