2N7002E-7-F
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Diodes Incorporated 2N7002E-7-F

Manufacturer No:
2N7002E-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 250MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002E-7-F is a small signal N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. This component is designed to offer low on-state resistance and superior switching performance, making it suitable for a variety of applications requiring efficient power management. The MOSFET is packaged in a SOT-23 (SC-59, TO-236) surface mount package, which is compact and ideal for space-constrained designs. It is also RoHS compliant, Pb-free, and halogen-free, aligning with modern environmental standards.

Key Specifications

Attribute Value
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (Rds(on)) 4 Ω (Max)
Continuous Drain Current (Id) 250 mA @ 25°C
Gate Threshold Voltage (Vgs(th)) 2.5 V @ 250 µA
Rated Power Dissipation 300 mW
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Operating and Storage Temperature Range -55 to 150 °C
Gate-to-Source Voltage (Vgs) ±20 V

Key Features

  • Low On-Resistance: The 2N7002E-7-F features a low drain-source on resistance, which enhances its efficiency in power management applications.
  • Low Gate Threshold Voltage: With a gate threshold voltage of 2.5 V, this MOSFET is easy to drive and suitable for low-voltage systems.
  • Low Input Capacitance: The low input capacitance reduces the gate charge and improves switching speed.
  • Fast Switching Speed: Designed for fast switching, this MOSFET is ideal for applications requiring quick on/off times.
  • Compact Surface Mount Package: The SOT-23 package is small and suitable for space-constrained designs.
  • Environmental Compliance: The component is RoHS compliant, Pb-free, and halogen-free, ensuring it meets current environmental standards.

Applications

  • Motor Control: The 2N7002E-7-F is used in motor control circuits due to its ability to handle moderate currents and voltages efficiently.
  • Power Management Functions: It is suitable for various power management applications, including DC-DC converters and level shift circuits.
  • Portable Electronics: This MOSFET is used in portable devices such as digital cameras, PDAs, and cell phones due to its low power consumption and compact size.
  • Low Side Load Switch: It can be used as a low side load switch in various electronic circuits.

Q & A

  1. What is the drain-to-source voltage rating of the 2N7002E-7-F MOSFET?

    The drain-to-source voltage rating is 60 V.

  2. What is the maximum continuous drain current of the 2N7002E-7-F?

    The maximum continuous drain current is 250 mA at 25°C.

  3. What is the gate threshold voltage of the 2N7002E-7-F?

    The gate threshold voltage is 2.5 V at 250 µA.

  4. What is the package style of the 2N7002E-7-F?

    The package style is SOT-23 (SC-59, TO-236).

  5. Is the 2N7002E-7-F RoHS compliant?

    Yes, the 2N7002E-7-F is RoHS compliant, Pb-free, and halogen-free.

  6. What are the typical applications of the 2N7002E-7-F?

    Typical applications include motor control, power management functions, DC-DC converters, and portable electronics.

  7. What is the operating temperature range of the 2N7002E-7-F?

    The operating and storage temperature range is -55 to 150 °C.

  8. What is the maximum gate-to-source voltage of the 2N7002E-7-F?

    The maximum gate-to-source voltage is ±20 V.

  9. How many units are typically available per reel?

    Typically, 3000 units are available per reel.

  10. What is the rated power dissipation of the 2N7002E-7-F?

    The rated power dissipation is 300 mW.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.22 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002E-7-F 2N7002W-7-F 2N7002Q-7-F 2N7002T-7-F 2N7002EQ-7-F 2N7002-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta) 115mA (Ta) 170mA (Ta) 115mA (Ta) 292mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 5V, 10V 5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V 7.5Ohm @ 50mA, 5V 5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 3Ohm @ 250mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.22 nC @ 4.5 V - 0.233 nC @ 10 V - 0.5 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 35 pF @ 30 V 50 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 370mW (Ta) 200mW (Ta) 370mW (Ta) 150mW (Ta) 500mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3 SOT-523 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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