2N7002EQ-7-F
  • Share:

Diodes Incorporated 2N7002EQ-7-F

Manufacturer No:
2N7002EQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT23 T&R 3K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002EQ-7-F is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET is packaged in a small SOT23 case, which is totally lead-free, fully RoHS compliant, and qualified to AEC-Q101 standards for high reliability.

Key Specifications

ParameterValue
V(BR)DSS60V
RDS(ON) max3Ω @ VGS = 10V
ID max300mA @ TA = +25°C
Gate Threshold VoltageLow
Input Capacitance (Ciss)22 - 50 pF @ VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance (Coss)11 - 25 pF @ VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance (Crss)2.0 - 5.0 pF @ VDS = 25V, VGS = 0V, f = 1.0MHz
Gate Resistance (Rg)120 Ω @ VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (Qg)223 pC @ VGS = 4.5V, VDS = 10V, ID = 250mA
Turn-On Delay Time (tD(ON))7.0 - 20 ns
PackageSOT23
Case MaterialMolded Plastic, “Green” Molding Compound
Moisture SensitivityLevel 1 per J-STD-020
TerminalsMatte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating)

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Applications

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the maximum drain-source voltage (V(BR)DSS) of the 2N7002EQ-7-F MOSFET?
    The maximum drain-source voltage (V(BR)DSS) is 60V.
  2. What is the maximum on-state resistance (RDS(ON)) of the 2N7002EQ-7-F MOSFET?
    The maximum on-state resistance (RDS(ON)) is 3Ω at VGS = 10V.
  3. What is the maximum continuous drain current (ID) of the 2N7002EQ-7-F MOSFET at 25°C?
    The maximum continuous drain current (ID) is 300mA at TA = +25°C.
  4. What are the key features of the 2N7002EQ-7-F MOSFET?
    The key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and a small surface mount package.
  5. Is the 2N7002EQ-7-F MOSFET RoHS compliant?
    Yes, the 2N7002EQ-7-F MOSFET is totally lead-free and fully RoHS compliant.
  6. What are the typical applications of the 2N7002EQ-7-F MOSFET?
    The typical applications include motor control and power management functions.
  7. What is the package type of the 2N7002EQ-7-F MOSFET?
    The package type is SOT23.
  8. Is the 2N7002EQ-7-F MOSFET qualified to any automotive standards?
    Yes, it is qualified to AEC-Q101 standards for high reliability.
  9. What is the moisture sensitivity level of the 2N7002EQ-7-F MOSFET?
    The moisture sensitivity level is Level 1 per J-STD-020.
  10. What is the finish of the terminals on the 2N7002EQ-7-F MOSFET?
    The terminals have a matte tin finish annealed over Alloy 42 leadframe (Lead Free Plating).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:292mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:35 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.07
8,126

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number 2N7002EQ-7-F 2N7002Q-7-F 2N7002TQ-7-F 2N7002E-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 292mA (Ta) 170mA (Ta) 115mA (Ta) 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V 5Ohm @ 500mA, 10V 13.5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.5 nC @ 10 V 0.233 nC @ 10 V - 0.22 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 35 pF @ 30 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 500mW (Ta) 370mW (Ta) 150mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-523 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAV70LP-7
BAV70LP-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA 3XDFN
BAT54ST-7-F
BAT54ST-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAS40T-7-F
BAS40T-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT523
BZX84C4V3TS-7-F
BZX84C4V3TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 4.3V SOT363
BZX84C27-7-G
BZX84C27-7-G
Diodes Incorporated
DIODE ZENER
BZX84C7V5-7-F-79
BZX84C7V5-7-F-79
Diodes Incorporated
DIODE ZENER 7.5V 300MW SOT23
BFS17NTA
BFS17NTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23-3
BFS17TA
BFS17TA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
DMG2305UX-13
DMG2305UX-13
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23
74LVC1G07FW5-7
74LVC1G07FW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN
74HCT595S16-13
74HCT595S16-13
Diodes Incorporated
HC HIGH PIN COUNT SO-16
ULN2002AD16-U
ULN2002AD16-U
Diodes Incorporated
IC PWR RELAY 7NPN 1:1 16DIP