2N7002EQ-7-F
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Diodes Incorporated 2N7002EQ-7-F

Manufacturer No:
2N7002EQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT23 T&R 3K
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The 2N7002EQ-7-F is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET is packaged in a small SOT23 case, which is totally lead-free, fully RoHS compliant, and qualified to AEC-Q101 standards for high reliability.

Key Specifications

ParameterValue
V(BR)DSS60V
RDS(ON) max3Ω @ VGS = 10V
ID max300mA @ TA = +25°C
Gate Threshold VoltageLow
Input Capacitance (Ciss)22 - 50 pF @ VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance (Coss)11 - 25 pF @ VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance (Crss)2.0 - 5.0 pF @ VDS = 25V, VGS = 0V, f = 1.0MHz
Gate Resistance (Rg)120 Ω @ VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (Qg)223 pC @ VGS = 4.5V, VDS = 10V, ID = 250mA
Turn-On Delay Time (tD(ON))7.0 - 20 ns
PackageSOT23
Case MaterialMolded Plastic, “Green” Molding Compound
Moisture SensitivityLevel 1 per J-STD-020
TerminalsMatte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating)

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Applications

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the maximum drain-source voltage (V(BR)DSS) of the 2N7002EQ-7-F MOSFET?
    The maximum drain-source voltage (V(BR)DSS) is 60V.
  2. What is the maximum on-state resistance (RDS(ON)) of the 2N7002EQ-7-F MOSFET?
    The maximum on-state resistance (RDS(ON)) is 3Ω at VGS = 10V.
  3. What is the maximum continuous drain current (ID) of the 2N7002EQ-7-F MOSFET at 25°C?
    The maximum continuous drain current (ID) is 300mA at TA = +25°C.
  4. What are the key features of the 2N7002EQ-7-F MOSFET?
    The key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and a small surface mount package.
  5. Is the 2N7002EQ-7-F MOSFET RoHS compliant?
    Yes, the 2N7002EQ-7-F MOSFET is totally lead-free and fully RoHS compliant.
  6. What are the typical applications of the 2N7002EQ-7-F MOSFET?
    The typical applications include motor control and power management functions.
  7. What is the package type of the 2N7002EQ-7-F MOSFET?
    The package type is SOT23.
  8. Is the 2N7002EQ-7-F MOSFET qualified to any automotive standards?
    Yes, it is qualified to AEC-Q101 standards for high reliability.
  9. What is the moisture sensitivity level of the 2N7002EQ-7-F MOSFET?
    The moisture sensitivity level is Level 1 per J-STD-020.
  10. What is the finish of the terminals on the 2N7002EQ-7-F MOSFET?
    The terminals have a matte tin finish annealed over Alloy 42 leadframe (Lead Free Plating).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:292mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:35 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002EQ-7-F 2N7002Q-7-F 2N7002TQ-7-F 2N7002E-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 292mA (Ta) 170mA (Ta) 115mA (Ta) 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V 5Ohm @ 500mA, 10V 13.5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.5 nC @ 10 V 0.233 nC @ 10 V - 0.22 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 35 pF @ 30 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 500mW (Ta) 370mW (Ta) 150mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-523 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3

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