Overview
The STP20NM50 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the Multiple Drain process with STMicroelectronics' PowerMESH™ horizontal layout, resulting in outstanding electrical characteristics. The STP20NM50 is known for its low on-resistance, high dv/dt and avalanche capabilities, and excellent dynamic performances, making it suitable for a variety of high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 20 | A |
| Continuous Drain Current (ID) at TC = 100°C | 12.6 | A |
| Pulsed Drain Current (IDM) | 80 | A |
| Total Dissipation at TC = 25°C | 192 (D²PAK/I²PAK), 45 (TO-220/TO-220FP) | W |
| Derating Factor | 1.54 (D²PAK/I²PAK), 0.36 (TO-220/TO-220FP) | W/°C |
| Peak diode recovery voltage slope (dv/dt) | 15 | V/ns |
| Insulation Withstand Voltage (VISO) | 2500 | V (RMS) |
| Operating Junction Temperature (Tj) | -65 to 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.65 (D²PAK/I²PAK), 2.8 (TO-220/TO-220FP) | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 500 | V |
| Static Drain-Source On Resistance (RDS(on)) | < 0.25 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 to 5 | V |
| Input Capacitance (Ciss) | 1480 | pF |
| Output Capacitance (Coss) | 285 | pF |
| Reverse Transfer Capacitance (Crss) | 34 | pF |
| Total Gate Charge (Qg) | 40 | nC |
Key Features
- High dv/dt and Avalanche Capabilities: The STP20NM50 is designed to handle high voltage and current transitions, making it robust in high-power switching applications.
- Low Input Capacitance and Gate Charge: This feature reduces the gate drive requirements, enhancing the overall efficiency of the system.
- Low Gate Input Resistance: This characteristic simplifies the gate drive circuitry and improves switching performance.
- Excellent Dynamic Performances: The MOSFET exhibits superior switching times and low on-resistance, contributing to efficient operation in high-frequency applications.
- 100% Avalanche Tested: Ensures reliability and robustness under extreme operating conditions.
- ECOPACK® Packages: Available in lead-free packages, compliant with environmental regulations and JEDEC standards.
Applications
- Switching Applications: Ideal for use in power supplies, DC-DC converters, and other high-power switching circuits.
- Power Management Systems: Suitable for use in motor control, power factor correction, and other power management applications.
- Industrial and Automotive Systems: Can be used in various industrial and automotive applications where high reliability and performance are required.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP20NM50?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 20 A.
- What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?
The thermal resistance junction-case (Rthj-case) for the TO-220 package is 2.8 °C/W.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from 3 to 5 V.
- Is the STP20NM50 100% avalanche tested?
Yes, the STP20NM50 is 100% avalanche tested.
- What are the typical applications of the STP20NM50?
The STP20NM50 is typically used in switching applications, power management systems, and various industrial and automotive systems.
- What is the maximum operating junction temperature (Tj) of the STP20NM50?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the total gate charge (Qg) of the STP20NM50?
The total gate charge (Qg) is 40 nC.
- Does the STP20NM50 come in lead-free packages?
Yes, the STP20NM50 is available in lead-free ECOPACK® packages.
- What is the peak diode recovery voltage slope (dv/dt) of the STP20NM50?
The peak diode recovery voltage slope (dv/dt) is 15 V/ns.
