STP20NM60
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STMicroelectronics STP20NM60

Manufacturer No:
STP20NM60
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP20NM60 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the multiple drain process with STMicroelectronics' PowerMESH™ horizontal layout, resulting in outstanding low ON-resistance, high dV/dt, and excellent avalanche characteristics. The MOSFET is designed to offer low input capacitance and gate charge, making it ideal for high-speed switching applications. The proprietary strip technique used in its fabrication enhances its dynamic performance significantly compared to similar products in the market.

Key Specifications

Parameter Value Unit
Channel Type N Channel
Drain Source Voltage (Vds) 600 V
Continuous Drain Current (Id) 20 A
Pulsed Drain Current (Idm) 80 A
Drain Source On State Resistance (Rds(on)) 0.29 Ω
Gate Source Threshold Voltage (Vgs(th)) ±4 V
Power Dissipation (Ptot) 192 W
Operating Temperature Max (Tj) 150 °C
Gate Charge (Qg) 39 nC
Transistor Case Style TO-220
Transistor Mounting Through Hole
No. of Pins 3

Key Features

  • Low input capacitance and gate charge, enhancing high-speed switching performance.
  • High dV/dt and avalanche capabilities, ensuring robust operation under various conditions.
  • Low gate input resistance, facilitating easy gate drive.
  • 100% avalanche tested, ensuring reliability and robust device performance.
  • Minimum lot-to-lot variations, providing consistent device performance.
  • ECOPACK® packages, meeting environmental requirements with lead-free second level interconnect.

Applications

  • Industrial applications, particularly in power management systems.
  • Switching applications, such as power supplies and motor control systems.
  • ABS (Anti-lock Braking System) and other automotive applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STP20NM60?

    The maximum drain-source voltage (Vds) is 600V.

  2. What is the continuous drain current rating of the STP20NM60?

    The continuous drain current (Id) is 20A.

  3. What is the on-state resistance (Rds(on)) of the STP20NM60?

    The on-state resistance (Rds(on)) is 0.29Ω.

  4. What is the maximum operating temperature of the STP20NM60?

    The maximum operating temperature (Tj) is 150°C.

  5. What type of packaging does the STP20NM60 come in?

    The STP20NM60 comes in a TO-220 package, available in tubes of 50 units.

  6. What are the key features of the MDmesh™ technology used in the STP20NM60?

    The MDmesh™ technology features low input capacitance, low gate charge, high dV/dt, and excellent avalanche capabilities.

  7. What are some common applications for the STP20NM60?

    Common applications include industrial power management, switching applications, and automotive systems such as ABS.

  8. Is the STP20NM60 100% avalanche tested?

    Yes, the STP20NM60 is 100% avalanche tested to ensure robust device performance.

  9. What is the gate charge (Qg) of the STP20NM60?

    The gate charge (Qg) is 39 nC.

  10. Does the STP20NM60 meet environmental standards?

    Yes, the STP20NM60 is available in ECOPACK® packages, which meet environmental requirements with lead-free second level interconnect.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):192W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP20NM60 STP20NM60A STP20NM50
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 500 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V 290mOhm @ 10A, 10V 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 60 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V 1630 pF @ 25 V 1480 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 192W (Tc) 192W (Tc) 192W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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