Overview
The STP20NM60 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the multiple drain process with STMicroelectronics' PowerMESH™ horizontal layout, resulting in outstanding low ON-resistance, high dV/dt, and excellent avalanche characteristics. The MOSFET is designed to offer low input capacitance and gate charge, making it ideal for high-speed switching applications. The proprietary strip technique used in its fabrication enhances its dynamic performance significantly compared to similar products in the market.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Channel Type | N Channel | |
Drain Source Voltage (Vds) | 600 | V |
Continuous Drain Current (Id) | 20 | A |
Pulsed Drain Current (Idm) | 80 | A |
Drain Source On State Resistance (Rds(on)) | 0.29 | Ω |
Gate Source Threshold Voltage (Vgs(th)) | ±4 | V |
Power Dissipation (Ptot) | 192 | W |
Operating Temperature Max (Tj) | 150 | °C |
Gate Charge (Qg) | 39 | nC |
Transistor Case Style | TO-220 | |
Transistor Mounting | Through Hole | |
No. of Pins | 3 |
Key Features
- Low input capacitance and gate charge, enhancing high-speed switching performance.
- High dV/dt and avalanche capabilities, ensuring robust operation under various conditions.
- Low gate input resistance, facilitating easy gate drive.
- 100% avalanche tested, ensuring reliability and robust device performance.
- Minimum lot-to-lot variations, providing consistent device performance.
- ECOPACK® packages, meeting environmental requirements with lead-free second level interconnect.
Applications
- Industrial applications, particularly in power management systems.
- Switching applications, such as power supplies and motor control systems.
- ABS (Anti-lock Braking System) and other automotive applications requiring high reliability and performance.
Q & A
- What is the maximum drain-source voltage of the STP20NM60?
The maximum drain-source voltage (Vds) is 600V.
- What is the continuous drain current rating of the STP20NM60?
The continuous drain current (Id) is 20A.
- What is the on-state resistance (Rds(on)) of the STP20NM60?
The on-state resistance (Rds(on)) is 0.29Ω.
- What is the maximum operating temperature of the STP20NM60?
The maximum operating temperature (Tj) is 150°C.
- What type of packaging does the STP20NM60 come in?
The STP20NM60 comes in a TO-220 package, available in tubes of 50 units.
- What are the key features of the MDmesh™ technology used in the STP20NM60?
The MDmesh™ technology features low input capacitance, low gate charge, high dV/dt, and excellent avalanche capabilities.
- What are some common applications for the STP20NM60?
Common applications include industrial power management, switching applications, and automotive systems such as ABS.
- Is the STP20NM60 100% avalanche tested?
Yes, the STP20NM60 is 100% avalanche tested to ensure robust device performance.
- What is the gate charge (Qg) of the STP20NM60?
The gate charge (Qg) is 39 nC.
- Does the STP20NM60 meet environmental standards?
Yes, the STP20NM60 is available in ECOPACK® packages, which meet environmental requirements with lead-free second level interconnect.