STP20NM60
  • Share:

STMicroelectronics STP20NM60

Manufacturer No:
STP20NM60
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP20NM60 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the multiple drain process with STMicroelectronics' PowerMESH™ horizontal layout, resulting in outstanding low ON-resistance, high dV/dt, and excellent avalanche characteristics. The MOSFET is designed to offer low input capacitance and gate charge, making it ideal for high-speed switching applications. The proprietary strip technique used in its fabrication enhances its dynamic performance significantly compared to similar products in the market.

Key Specifications

Parameter Value Unit
Channel Type N Channel
Drain Source Voltage (Vds) 600 V
Continuous Drain Current (Id) 20 A
Pulsed Drain Current (Idm) 80 A
Drain Source On State Resistance (Rds(on)) 0.29 Ω
Gate Source Threshold Voltage (Vgs(th)) ±4 V
Power Dissipation (Ptot) 192 W
Operating Temperature Max (Tj) 150 °C
Gate Charge (Qg) 39 nC
Transistor Case Style TO-220
Transistor Mounting Through Hole
No. of Pins 3

Key Features

  • Low input capacitance and gate charge, enhancing high-speed switching performance.
  • High dV/dt and avalanche capabilities, ensuring robust operation under various conditions.
  • Low gate input resistance, facilitating easy gate drive.
  • 100% avalanche tested, ensuring reliability and robust device performance.
  • Minimum lot-to-lot variations, providing consistent device performance.
  • ECOPACK® packages, meeting environmental requirements with lead-free second level interconnect.

Applications

  • Industrial applications, particularly in power management systems.
  • Switching applications, such as power supplies and motor control systems.
  • ABS (Anti-lock Braking System) and other automotive applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STP20NM60?

    The maximum drain-source voltage (Vds) is 600V.

  2. What is the continuous drain current rating of the STP20NM60?

    The continuous drain current (Id) is 20A.

  3. What is the on-state resistance (Rds(on)) of the STP20NM60?

    The on-state resistance (Rds(on)) is 0.29Ω.

  4. What is the maximum operating temperature of the STP20NM60?

    The maximum operating temperature (Tj) is 150°C.

  5. What type of packaging does the STP20NM60 come in?

    The STP20NM60 comes in a TO-220 package, available in tubes of 50 units.

  6. What are the key features of the MDmesh™ technology used in the STP20NM60?

    The MDmesh™ technology features low input capacitance, low gate charge, high dV/dt, and excellent avalanche capabilities.

  7. What are some common applications for the STP20NM60?

    Common applications include industrial power management, switching applications, and automotive systems such as ABS.

  8. Is the STP20NM60 100% avalanche tested?

    Yes, the STP20NM60 is 100% avalanche tested to ensure robust device performance.

  9. What is the gate charge (Qg) of the STP20NM60?

    The gate charge (Qg) is 39 nC.

  10. Does the STP20NM60 meet environmental standards?

    Yes, the STP20NM60 is available in ECOPACK® packages, which meet environmental requirements with lead-free second level interconnect.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):192W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$6.66
116

Please send RFQ , we will respond immediately.

Same Series
STP20NM60FP
STP20NM60FP
MOSFET N-CH 600V 20A TO220FP
STW20NM60
STW20NM60
MOSFET N-CH 600V 20A TO247-3
STB20NM60T4
STB20NM60T4
MOSFET N-CH 600V 20A D2PAK
STB20NM60-1
STB20NM60-1
MOSFET N-CH 600V 20A I2PAK

Similar Products

Part Number STP20NM60 STP20NM60A STP20NM50
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 500 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V 290mOhm @ 10A, 10V 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 60 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V 1630 pF @ 25 V 1480 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 192W (Tc) 192W (Tc) 192W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN