Overview
The STP20NM60FP is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the revolutionary MDmesh™ technology. This technology combines the Multiple Drain process with STMicroelectronics' PowerMESH™ horizontal layout, resulting in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. The device is designed to enhance the dynamic performance of high-voltage applications, making it ideal for systems requiring high power density and efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (ID) - Continuous at TC = 25°C | 20 | A |
| Drain Current (ID) - Continuous at TC = 100°C | 12.6 | A |
| Drain Current (IDM) - Pulsed | 80 | A |
| On-Resistance (RDS(on)) | < 0.29 | Ω |
| Avalanche Current (IAS) | 10 | A |
| Single Pulse Avalanche Energy (EAS) | 650 | mJ |
| Gate Input Resistance (Rg) | 1.6 | Ω |
| Package | TO-220FP |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Outstanding low on-resistance
- Excellent dynamic performance due to proprietary strip technique
- Available in ECOPACK® packages with Lead-free second level interconnect
Applications
The STP20NM60FP is highly suitable for increasing the power density of high-voltage converters, allowing for system miniaturization and higher efficiencies. It is ideal for various switching applications, including power supplies, motor control, and other high-power electronic systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP20NM60FP?
The maximum drain-source voltage (VDS) is 600 V. - What is the typical on-resistance (RDS(on)) of the STP20NM60FP?
The typical on-resistance (RDS(on)) is less than 0.29 Ω. - What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 20 A. - What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 80 A. - What are the key features of the MDmesh™ technology used in the STP20NM60FP?
The key features include high dv/dt and avalanche capabilities, 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance. - In what packages is the STP20NM60FP available?
The STP20NM60FP is available in the TO-220FP package. - What are the typical applications of the STP20NM60FP?
The typical applications include high-voltage converters, power supplies, motor control, and other high-power electronic systems. - What is the maximum gate-source voltage (VGS)?
The maximum gate-source voltage (VGS) is ±30 V. - What is the single pulse avalanche energy (EAS) of the STP20NM60FP?
The single pulse avalanche energy (EAS) is 650 mJ. - Is the STP20NM60FP available in Lead-free packages?
Yes, the STP20NM60FP is available in ECOPACK® packages with Lead-free second level interconnect.
