STW20NM60
  • Share:

STMicroelectronics STW20NM60

Manufacturer No:
STW20NM60
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW20NM60 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This device combines the multiple drain process with ST's proprietary PowerMESH™ horizontal layout, resulting in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. The STW20NM60 is available in various packages, including TO-247, TO-220, TO-220FP, D²PAK, and I²PAK, making it versatile for different application needs.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Drain Current (ID) - Continuous at TC = 25°C 20 A
Drain Current (ID) - Continuous at TC = 100°C 12.6 A
Drain Current (IDM) - Pulsed 80 A
Maximum Junction Temperature (Tj) 150 °C
Drain-Source On-State Resistance (RDS(on)) < 0.29 Ω
Total Gate Charge (Qg) 39 nC
Output Capacitance (Coss) 215 pF
Rise Time (tr) 20 ns
Package TO-247, TO-220, TO-220FP, D²PAK, I²PAK

Key Features

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Advanced MDmesh™ technology for improved dynamic performance
  • ECOPACK® packages with Lead-free second level interconnect

Applications

The STW20NM60 is suitable for various switching applications due to its high performance and robust characteristics. These include:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching circuits
  • Aerospace and automotive systems requiring high reliability

Q & A

  1. What is the maximum drain-source voltage of the STW20NM60?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 20 A.

  3. What is the maximum gate-source voltage?

    The maximum gate-source voltage (VGS) is ±30 V.

  4. What is the typical on-state resistance (RDS(on)) of the STW20NM60?

    The typical on-state resistance (RDS(on)) is less than 0.29 Ω.

  5. What are the available packages for the STW20NM60?

    The STW20NM60 is available in TO-247, TO-220, TO-220FP, D²PAK, and I²PAK packages.

  6. What is the maximum junction temperature (Tj) for the STW20NM60?

    The maximum junction temperature (Tj) is 150°C.

  7. What is the total gate charge (Qg) of the STW20NM60?

    The total gate charge (Qg) is 39 nC.

  8. What is the output capacitance (Coss) of the STW20NM60?

    The output capacitance (Coss) is 215 pF.

  9. What are some typical applications of the STW20NM60?

    Typical applications include power supplies, DC-DC converters, motor control, and high-frequency switching circuits.

  10. Does the STW20NM60 come in environmentally friendly packaging?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):192W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$6.63
135

Please send RFQ , we will respond immediately.

Same Series
STP20NM60FP
STP20NM60FP
MOSFET N-CH 600V 20A TO220FP
STW20NM60
STW20NM60
MOSFET N-CH 600V 20A TO247-3
STB20NM60T4
STB20NM60T4
MOSFET N-CH 600V 20A D2PAK
STB20NM60-1
STB20NM60-1
MOSFET N-CH 600V 20A I2PAK

Similar Products

Part Number STW20NM60 STW26NM60 STW20NM50
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 550 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 30A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V 135mOhm @ 13A, 10V 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 102 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V 2900 pF @ 25 V 1480 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 192W (Tc) 313W (Tc) 214W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB