STW20NM60
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STMicroelectronics STW20NM60

Manufacturer No:
STW20NM60
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW20NM60 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ technology. This device combines the multiple drain process with ST's proprietary PowerMESH™ horizontal layout, resulting in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. The STW20NM60 is available in various packages, including TO-247, TO-220, TO-220FP, D²PAK, and I²PAK, making it versatile for different application needs.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Drain Current (ID) - Continuous at TC = 25°C 20 A
Drain Current (ID) - Continuous at TC = 100°C 12.6 A
Drain Current (IDM) - Pulsed 80 A
Maximum Junction Temperature (Tj) 150 °C
Drain-Source On-State Resistance (RDS(on)) < 0.29 Ω
Total Gate Charge (Qg) 39 nC
Output Capacitance (Coss) 215 pF
Rise Time (tr) 20 ns
Package TO-247, TO-220, TO-220FP, D²PAK, I²PAK

Key Features

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Advanced MDmesh™ technology for improved dynamic performance
  • ECOPACK® packages with Lead-free second level interconnect

Applications

The STW20NM60 is suitable for various switching applications due to its high performance and robust characteristics. These include:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching circuits
  • Aerospace and automotive systems requiring high reliability

Q & A

  1. What is the maximum drain-source voltage of the STW20NM60?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 20 A.

  3. What is the maximum gate-source voltage?

    The maximum gate-source voltage (VGS) is ±30 V.

  4. What is the typical on-state resistance (RDS(on)) of the STW20NM60?

    The typical on-state resistance (RDS(on)) is less than 0.29 Ω.

  5. What are the available packages for the STW20NM60?

    The STW20NM60 is available in TO-247, TO-220, TO-220FP, D²PAK, and I²PAK packages.

  6. What is the maximum junction temperature (Tj) for the STW20NM60?

    The maximum junction temperature (Tj) is 150°C.

  7. What is the total gate charge (Qg) of the STW20NM60?

    The total gate charge (Qg) is 39 nC.

  8. What is the output capacitance (Coss) of the STW20NM60?

    The output capacitance (Coss) is 215 pF.

  9. What are some typical applications of the STW20NM60?

    Typical applications include power supplies, DC-DC converters, motor control, and high-frequency switching circuits.

  10. Does the STW20NM60 come in environmentally friendly packaging?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):192W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STP20NM60FP
STP20NM60FP
MOSFET N-CH 600V 20A TO220FP
STW20NM60
STW20NM60
MOSFET N-CH 600V 20A TO247-3
STB20NM60T4
STB20NM60T4
MOSFET N-CH 600V 20A D2PAK
STB20NM60-1
STB20NM60-1
MOSFET N-CH 600V 20A I2PAK

Similar Products

Part Number STW20NM60 STW26NM60 STW20NM50
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 550 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 30A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V 135mOhm @ 13A, 10V 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 102 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V 2900 pF @ 25 V 1480 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 192W (Tc) 313W (Tc) 214W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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