Overview
The STW20NM50FD is a high-performance N-channel power MOSFET produced by STMicroelectronics. It features the company's advanced MDmesh™ technology, which combines the benefits of reduced on-resistance and fast switching capabilities. This MOSFET is particularly suited for applications requiring high power handling and efficient switching, such as in power supplies, welding equipment, and other high-power electronic systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source Voltage (VDS) | 500 | V |
| Drain-gate Voltage (VDGR) | 500 | V |
| Gate-source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 20 | A |
| Continuous Drain Current (ID) at TC = 100°C | 14 | A |
| Pulsed Drain Current (IDM) | 80 | A |
| Total Dissipation at TC = 25°C | 214 | W |
| Derating Factor | 1.42 | W/°C |
| Maximum Operating Junction Temperature (Tj) | 150 | °C |
| Static Drain-source On Resistance (RDS(on)) | 0.22 - 0.25 | Ω |
| Input Capacitance (Ciss) | 1380 | pF |
| Output Capacitance (Coss) | 290 | pF |
| Reverse Transfer Capacitance (Crss) | 40 | pF |
| Gate Input Resistance (Rg) | 2.8 | Ω |
Key Features
- Low On-Resistance: The STW20NM50FD features a typical on-resistance of 0.22 Ω, making it highly efficient for high-power applications.
- Fast Switching Capabilities: It has high dv/dt and avalanche capabilities, ensuring fast and reliable switching.
- Intrinsic Fast-Recovery Body Diode: The MOSFET includes an intrinsic fast-recovery body diode, which is beneficial for bridge topologies and ZVS phase-shift converters.
- Low Input Capacitance and Gate Charge: This reduces the gate drive requirements and enhances the overall efficiency of the system.
- High Avalanche Energy Capability: The MOSFET is 100% avalanche tested, ensuring robustness against transient conditions.
- Tight Process Control and High Manufacturing Yields: This ensures consistent performance and reliability across different units.
Applications
- ZVS Phase-Shift Full Bridge Converters: Ideal for use in zero-voltage switching (ZVS) phase-shift full bridge converters, particularly in SMPS and welding equipment.
- Power Supplies: Suitable for high-power supply applications where efficient switching and low on-resistance are critical.
- High-Power Electronic Systems: Can be used in various high-power electronic systems requiring reliable and efficient power handling.
Q & A
- What is the maximum drain-source voltage (VDS) of the STW20NM50FD?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance (RDS(on)) of the STW20NM50FD?
The typical on-resistance (RDS(on)) is 0.22 Ω.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 20 A.
- What is the maximum operating junction temperature (Tj) of the STW20NM50FD?
The maximum operating junction temperature (Tj) is 150°C.
- What are the key features of the STW20NM50FD's MDmesh™ technology?
The MDmesh™ technology combines reduced on-resistance, fast switching capabilities, and an intrinsic fast-recovery body diode.
- What types of applications is the STW20NM50FD suited for?
The STW20NM50FD is suited for ZVS phase-shift full bridge converters, power supplies, and other high-power electronic systems.
- What is the input capacitance (Ciss) of the STW20NM50FD?
The input capacitance (Ciss) is 1380 pF.
- What is the gate input resistance (Rg) of the STW20NM50FD?
The gate input resistance (Rg) is 2.8 Ω.
- Is the STW20NM50FD 100% avalanche tested?
Yes, the STW20NM50FD is 100% avalanche tested.
- What is the maximum single pulse avalanche energy (EAS) of the STW20NM50FD?
The maximum single pulse avalanche energy (EAS) is 700 mJ.
