STGWA19NC60HD
  • Share:

STMicroelectronics STGWA19NC60HD

Manufacturer No:
STGWA19NC60HD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 600V 52A 208W TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGWA19NC60HD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device utilizes the advanced PowerMESH process, which provides an excellent trade-off between switching performance and low on-state behavior. It is designed for applications requiring high current handling and fast switching times.

Key Specifications

ParameterValue
Current Rating31 A
Voltage Rating600 V
Package TypeTO-247-3
Switching SpeedVery Fast
Diode TypeUltraFAST Diode

Key Features

  • Advanced PowerMESH process for improved switching performance and low on-state behavior.
  • High current rating of 31 A and voltage rating of 600 V.
  • Very fast switching times, making it suitable for high-frequency applications.
  • UltraFAST diode for enhanced performance.
  • Low thermal resistance, ensuring efficient heat dissipation.

Applications

The STGWA19NC60HD is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-frequency switching applications.

Q & A

  1. What is the current rating of the STGWA19NC60HD?
    The current rating of the STGWA19NC60HD is 31 A.
  2. What is the voltage rating of the STGWA19NC60HD?
    The voltage rating of the STGWA19NC60HD is 600 V.
  3. What package type does the STGWA19NC60HD use?
    The STGWA19NC60HD uses the TO-247-3 package type.
  4. What is the switching speed of the STGWA19NC60HD?
    The STGWA19NC60HD has very fast switching times.
  5. What type of diode does the STGWA19NC60HD include?
    The STGWA19NC60HD includes an UltraFAST diode.
  6. What process is used in the STGWA19NC60HD?
    The STGWA19NC60HD uses the advanced PowerMESH process.
  7. What are some common applications for the STGWA19NC60HD?
    The STGWA19NC60HD is commonly used in power supplies, motor drives, renewable energy systems, and high-frequency switching applications.
  8. How does the STGWA19NC60HD handle thermal resistance?
    The STGWA19NC60HD has low thermal resistance, ensuring efficient heat dissipation.
  9. Where can I find detailed specifications for the STGWA19NC60HD?
    Detailed specifications for the STGWA19NC60HD can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser and Digi-Key.
  10. What are the benefits of using the STGWA19NC60HD in high-power applications?
    The STGWA19NC60HD offers excellent switching performance, low on-state behavior, and efficient heat dissipation, making it highly suitable for high-power applications.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):52 A
Current - Collector Pulsed (Icm):60 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 12A
Power - Max:208 W
Switching Energy:85µJ (on), 189µJ (off)
Input Type:Standard
Gate Charge:53 nC
Td (on/off) @ 25°C:25ns/97ns
Test Condition:390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr):31 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247 Long Leads
0 Remaining View Similar

In Stock

$3.21
161

Please send RFQ , we will respond immediately.

Similar Products

Part Number STGWA19NC60HD STGW19NC60HD
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 52 A 42 A
Current - Collector Pulsed (Icm) 60 A 60 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A 2.5V @ 15V, 12A
Power - Max 208 W 140 W
Switching Energy 85µJ (on), 189µJ (off) 85µJ (on), 189µJ (off)
Input Type Standard Standard
Gate Charge 53 nC 53 nC
Td (on/off) @ 25°C 25ns/97ns 25ns/97ns
Test Condition 390V, 12A, 10Ohm, 15V 390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr) 31 ns 31 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 Long Leads TO-247 Long Leads

Related Product By Categories

FGA60N65SMD
FGA60N65SMD
onsemi
IGBT FIELD STOP 650V 120A TO3P
STGB10H60DF
STGB10H60DF
STMicroelectronics
IGBT 600V 20A 115W D2PAK
NGTB40N65FL2WG
NGTB40N65FL2WG
onsemi
IGBT TRENCH/FS 650V 80A TO247
STGW15H120DF2
STGW15H120DF2
STMicroelectronics
IGBT H-SERIES 1200V 15A TO-247
FGAF40N60SMD
FGAF40N60SMD
onsemi
IGBT FIELD STOP 600V 80A TO3PF
AFGHL75T65SQD
AFGHL75T65SQD
onsemi
650V75A FS4 IGBT TO-247LL
STGB10M65DF2
STGB10M65DF2
STMicroelectronics
IGBT 650V 10A D2PAK
FGB3040G2-F085C
FGB3040G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO263
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
NGD15N41CLT4G
NGD15N41CLT4G
Littelfuse Inc.
IGBT 440V 15A 107W DPAK
STGB20NC60VT4
STGB20NC60VT4
STMicroelectronics
IGBT 600V 60A 200W D2PAK
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
LDL1117S33R
LDL1117S33R
STMicroelectronics
IC REG LINEAR 3.3V 1.2A SOT223
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT