Overview
The FGA60N65SMD is a Field Stop Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes novel field stop IGBT technology to offer optimal performance in various high-power applications. It is particularly suited for solar inverters, uninterruptible power supplies (UPS), welders, and power factor correction (PFC) systems where low conduction and switching losses are crucial.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCES | Collector to Emitter Voltage | 650 | V |
| VGES | Gate to Emitter Voltage | ±20 | V |
| IC | Collector Current (TC = 25°C) | 120 | A |
| IC | Collector Current (TC = 100°C) | 60 | A |
| ICM | Pulsed Collector Current | 180 | A |
| IF | Diode Forward Current (TC = 25°C) | 60 | A |
| IF | Diode Forward Current (TC = 100°C) | 30 | A |
| IFM | Pulsed Diode Maximum Forward Current | 180 | A |
| PD | Maximum Power Dissipation (TC = 25°C) | 600 | W |
| PD | Maximum Power Dissipation (TC = 100°C) | 300 | W |
| TJ | Operating Junction Temperature | -55 to +175 | °C |
| Tstg | Storage Temperature Range | -55 to +175 | °C |
| TL | Maximum Lead Temp. for Soldering Purposes | 300 | °C |
| VGE(th) | Gate to Emitter Threshold Voltage | 3.5 - 6.0 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | 1.9 - 2.5 | V |
| Eoff | Turn-Off Switching Loss | 0.45 - 0.60 | mJ |
| Qg | Total Gate Charge | 189 - 284 | nC |
Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Coefficient: For easy parallel operating
- High Current Capability: Up to 60 A at TC = 100°C
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
- Fast Switching: EOFF = 7.5 μJ/A
- Tightened Parameter Distribution: For consistent performance
- RoHS Compliant: Lead-free and compliant with RoHS standards
Applications
- Solar Inverters: Efficient energy conversion in solar power systems
- Uninterruptible Power Supplies (UPS): Reliable power backup systems
- Welders: High-power welding applications
- Switch Mode Power Supplies (SMPS): Efficient power conversion in SMPS systems
- Power Factor Correction (PFC): Improving power factor in various applications
Q & A
- What is the maximum collector to emitter voltage of the FGA60N65SMD IGBT?
The maximum collector to emitter voltage (VCES) is 650 V. - What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 120 A at 25°C and 60 A at 100°C. - What is the typical collector to emitter saturation voltage?
The typical collector to emitter saturation voltage (VCE(sat)) is 1.9 V at IC = 60 A. - What are the typical turn-off switching losses?
The typical turn-off switching losses (Eoff) are 0.45 - 0.60 mJ. - Is the FGA60N65SMD RoHS compliant?
Yes, the FGA60N65SMD is RoHS compliant and lead-free. - What is the maximum operating junction temperature?
The maximum operating junction temperature (TJ) is 175°C. - What are the typical applications of the FGA60N65SMD?
The typical applications include solar inverters, UPS, welders, SMPS, and PFC systems. - What is the package type of the FGA60N65SMD?
The package type is TO-3P-3L. - What is the maximum power dissipation at 25°C and 100°C?
The maximum power dissipation is 600 W at 25°C and 300 W at 100°C. - Does the FGA60N65SMD have a co-packaged diode?
Yes, it has a co-packaged diode.
