FGA60N65SMD
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onsemi FGA60N65SMD

Manufacturer No:
FGA60N65SMD
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT FIELD STOP 650V 120A TO3P
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The FGA60N65SMD is a Field Stop Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes novel field stop IGBT technology to offer optimal performance in various high-power applications. It is particularly suited for solar inverters, uninterruptible power supplies (UPS), welders, and power factor correction (PFC) systems where low conduction and switching losses are crucial.

Key Specifications

SymbolParameterValueUnit
VCESCollector to Emitter Voltage650V
VGESGate to Emitter Voltage±20V
ICCollector Current (TC = 25°C)120A
ICCollector Current (TC = 100°C)60A
ICMPulsed Collector Current180A
IFDiode Forward Current (TC = 25°C)60A
IFDiode Forward Current (TC = 100°C)30A
IFMPulsed Diode Maximum Forward Current180A
PDMaximum Power Dissipation (TC = 25°C)600W
PDMaximum Power Dissipation (TC = 100°C)300W
TJOperating Junction Temperature-55 to +175°C
TstgStorage Temperature Range-55 to +175°C
TLMaximum Lead Temp. for Soldering Purposes300°C
VGE(th)Gate to Emitter Threshold Voltage3.5 - 6.0V
VCE(sat)Collector to Emitter Saturation Voltage1.9 - 2.5V
EoffTurn-Off Switching Loss0.45 - 0.60mJ
QgTotal Gate Charge189 - 284nC

Key Features

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Coefficient: For easy parallel operating
  • High Current Capability: Up to 60 A at TC = 100°C
  • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
  • Fast Switching: EOFF = 7.5 μJ/A
  • Tightened Parameter Distribution: For consistent performance
  • RoHS Compliant: Lead-free and compliant with RoHS standards

Applications

  • Solar Inverters: Efficient energy conversion in solar power systems
  • Uninterruptible Power Supplies (UPS): Reliable power backup systems
  • Welders: High-power welding applications
  • Switch Mode Power Supplies (SMPS): Efficient power conversion in SMPS systems
  • Power Factor Correction (PFC): Improving power factor in various applications

Q & A

  1. What is the maximum collector to emitter voltage of the FGA60N65SMD IGBT?
    The maximum collector to emitter voltage (VCES) is 650 V.
  2. What is the maximum collector current at 25°C and 100°C?
    The maximum collector current is 120 A at 25°C and 60 A at 100°C.
  3. What is the typical collector to emitter saturation voltage?
    The typical collector to emitter saturation voltage (VCE(sat)) is 1.9 V at IC = 60 A.
  4. What are the typical turn-off switching losses?
    The typical turn-off switching losses (Eoff) are 0.45 - 0.60 mJ.
  5. Is the FGA60N65SMD RoHS compliant?
    Yes, the FGA60N65SMD is RoHS compliant and lead-free.
  6. What is the maximum operating junction temperature?
    The maximum operating junction temperature (TJ) is 175°C.
  7. What are the typical applications of the FGA60N65SMD?
    The typical applications include solar inverters, UPS, welders, SMPS, and PFC systems.
  8. What is the package type of the FGA60N65SMD?
    The package type is TO-3P-3L.
  9. What is the maximum power dissipation at 25°C and 100°C?
    The maximum power dissipation is 600 W at 25°C and 300 W at 100°C.
  10. Does the FGA60N65SMD have a co-packaged diode?
    Yes, it has a co-packaged diode.

Product Attributes

IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):120 A
Current - Collector Pulsed (Icm):180 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 60A
Power - Max:600 W
Switching Energy:1.54mJ (on), 450µJ (off)
Input Type:Standard
Gate Charge:189 nC
Td (on/off) @ 25°C:18ns/104ns
Test Condition:400V, 60A, 3Ohm, 15V
Reverse Recovery Time (trr):47 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P
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Similar Products

Part Number FGA60N65SMD FGA40N65SMD
Manufacturer onsemi onsemi
Product Status Active Active
IGBT Type Field Stop Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 120 A 80 A
Current - Collector Pulsed (Icm) 180 A 120 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A 2.5V @ 15V, 40A
Power - Max 600 W 349 W
Switching Energy 1.54mJ (on), 450µJ (off) 820µJ (on), 260µJ (off)
Input Type Standard Standard
Gate Charge 189 nC 119 nC
Td (on/off) @ 25°C 18ns/104ns 12ns/92ns
Test Condition 400V, 60A, 3Ohm, 15V 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 47 ns 42 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Supplier Device Package TO-3P TO-3PN

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