Overview
The STGW30NC60WD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is designed for high-frequency applications and features an ultra-fast recovery antiparallel diode. Utilizing the advanced Power MESH™ process, it offers an excellent trade-off between switching performance and low on-state behavior. The IGBT is packaged in a TO-247 package, making it suitable for a variety of power electronics applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCE) | 600 | V |
| Collector Current (continuous) at 25°C | 60 | A |
| Collector Current (continuous) at 100°C | 30 | A |
| Collector Current (pulsed) | 150 | A |
| Gate-Emitter Voltage (VGE) | ±20 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.1 | V |
| Gate Threshold Voltage (VGE(th)) | 3.75 - 5.75 | V |
| Total Gate Charge (Qg) | 102 | nC |
| Turn-on Delay Time (td(on)) | 29.5 | ns |
| Turn-off Delay Time (td(off)) | 118 | ns |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.63 | °C/W |
Key Features
- High frequency operation
- Lower CRES / CIES ratio, reducing cross-conduction susceptibility
- Very soft ultra-fast recovery antiparallel diode
- Advanced Power MESH™ process for excellent switching performance and low on-state behavior
- TO-247 package for robust and reliable mounting
- ECOPACK® packages with Lead-free second level interconnect for environmental compliance
Applications
- High frequency motor controls
- Inverters and UPS systems
- High Frequency (HF), Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) in both hard switch and resonant topologies
Q & A
- What is the maximum collector-emitter voltage of the STGW30NC60WD IGBT?
The maximum collector-emitter voltage (VCE) is 600 V.
- What is the continuous collector current rating at 25°C and 100°C?
The continuous collector current is 60 A at 25°C and 30 A at 100°C.
- What is the maximum gate-emitter voltage?
The maximum gate-emitter voltage (VGE) is ±20 V.
- What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage (VCE(sat)) is 2.1 V.
- What are the key features of the STGW30NC60WD IGBT?
The key features include high frequency operation, lower CRES / CIES ratio, very soft ultra-fast recovery antiparallel diode, and advanced Power MESH™ process.
- In what package is the STGW30NC60WD IGBT available?
The IGBT is available in a TO-247 package.
- What are the typical applications of the STGW30NC60WD IGBT?
Typical applications include high frequency motor controls, inverters, UPS systems, HF, SMPS, and PFC in both hard switch and resonant topologies.
- What is the maximum junction temperature of the STGW30NC60WD IGBT?
The maximum junction temperature (Tj) is 150°C.
- What is the thermal resistance junction-case (Rthj-case) of the IGBT?
The thermal resistance junction-case (Rthj-case) is 0.63°C/W.
- Does the STGW30NC60WD IGBT come in an environmentally friendly package?
Yes, it is available in ECOPACK® packages with Lead-free second level interconnect.
