Overview
The STGB18N40LZT4 is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component is specifically designed for coil driving in the harsh environment of automotive ignition systems. It utilizes the advanced PowerMESH technology, ensuring high performance and reliability over a wide operating temperature range. The IGBT is AEC-Q101 qualified, indicating its suitability for automotive applications. It features a very low on-state voltage and high Single Pulse Energy Capability (SCIS) of 180 mJ at 150°C, making it ideal for demanding automotive ignition systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 390 | V |
| Continuous collector current (IC) at TC = 100°C | 30 | A |
| Pulsed collector current (ICP) | 40 | A |
| Gate-emitter voltage (VGE) | ±16 | V |
| Total power dissipation (PTOT) at TC = 25°C | 150 | W |
| Single pulse energy (ESCIS) at TC = 150°C, L = 3 mH, VCC = 50 V | 180 | mJ |
| Thermal resistance, junction-to-case (RthJC) | 1 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 62.5 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) at VGE = 4.5 V, IC = 10 A | 1.35 - 1.7 | V |
| Gate threshold voltage (VGE(th)) at IC = 1 mA | 1.2 - 2.3 | V |
Key Features
- AEC-Q101 qualified for automotive applications.
- High Single Pulse Energy Capability (SCIS) of 180 mJ at 150°C.
- Very low on-state voltage (VCE(sat)) of 1.35 - 1.7 V.
- ESD-protected logic level gate input.
- Integrated gate resistor, eliminating the need for external protection circuitry.
- High pulsed current capability of up to 40 A.
- Gate-collector high voltage clamping.
- Logic level gate drive.
Applications
The STGB18N40LZT4 is specifically designed for coil driving in automotive ignition systems. Its robust design and high performance make it suitable for the harsh environments encountered in such applications.
Q & A
- What is the collector-emitter voltage rating of the STGB18N40LZT4?
The collector-emitter voltage (VCE) rating is 390 V.
- What is the continuous collector current rating at 100°C?
The continuous collector current (IC) rating at 100°C is 30 A.
- What is the pulsed collector current capability?
The pulsed collector current (ICP) capability is up to 40 A.
- What is the Single Pulse Energy Capability (SCIS) at 150°C?
The SCIS at 150°C, with L = 3 mH and VCC = 50 V, is 180 mJ.
- Is the STGB18N40LZT4 AEC-Q101 qualified?
Yes, the STGB18N40LZT4 is AEC-Q101 qualified for automotive applications.
- What is the thermal resistance, junction-to-case (RthJC)?
The thermal resistance, junction-to-case (RthJC), is 1 °C/W.
- Does the STGB18N40LZT4 have ESD protection?
Yes, the STGB18N40LZT4 has ESD-protected logic level gate input.
- What is the collector-emitter saturation voltage (VCE(sat))?
The collector-emitter saturation voltage (VCE(sat)) is 1.35 - 1.7 V at VGE = 4.5 V and IC = 10 A.
- What is the gate threshold voltage (VGE(th))?
The gate threshold voltage (VGE(th)) is 1.2 - 2.3 V at IC = 1 mA.
- In what package is the STGB18N40LZT4 available?
The STGB18N40LZT4 is available in the D²PAK (TO-263) package.
