Overview
The FGH15T120SMD-F155 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes innovative field stop trench IGBT technology, offering optimal performance for hard switching applications. It is designed to operate at high speeds with low saturation voltage, making it suitable for a variety of power management and conversion applications.
Key Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | VGE = 0 V, IC = 250 μA | - | - | 1200 | V |
| Gate to Emitter Voltage | VGES | - | - | ±25 | V | |
| Transient Gate to Emitter Voltage | - | - | - | ±30 | V | |
| Collector Current (TC = 25°C) | IC | - | - | 30 | A | |
| Collector Current (TC = 100°C) | IC | - | - | 15 | A | |
| Clamped Inductive Load Current (TC = 25°C) | ILM | VCC = 600 V, VGE = 15 V, IC = 60 A, RG = 34 Ω | - | - | 60 | A |
| Pulsed Collector Current | ICM | - | - | 60 | A | |
| Diode Continuous Forward Current (TC = 25°C) | IF | - | - | 30 | A | |
| Diode Continuous Forward Current (TC = 100°C) | IF | - | - | 15 | A | |
| Maximum Power Dissipation (TC = 25°C) | PD | - | - | 333 | W | |
| Operating Junction Temperature | TJ | - | -55 to +175 | - | °C | |
| Storage Temperature Range | Tstg | - | -55 to +175 | - | °C | |
| Thermal Resistance, Junction to Case (IGBT) | RθJC | - | - | 0.45 | °C/W | |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 40 | °C/W | |
| Gate to Emitter Threshold Voltage | VGE(th) | IC = 15 mA, VCE = VGE | 4.9 | 6.2 | 7.5 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 15 A, VGE = 15 V, TC = 25°C | - | 1.8 | 2.4 | V |
Key Features
- Field Stop Trench Technology: Offers high-speed switching and low saturation voltage.
- Positive Temperature Coefficient: Ensures stable operation over a wide temperature range.
- High Input Impedance: Reduces the need for complex gate drive circuits.
- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 15 A.
- 100% Tested for ILM: Ensures reliability in clamped inductive load conditions.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Solar Inverters: Suitable for high-efficiency power conversion in solar energy systems.
- Uninterruptible Power Supplies (UPS): Provides reliable power switching for UPS systems.
- Welders: Used in welding equipment for efficient and reliable power management.
- Power Factor Correction (PFC): Enhances power factor in various power supply applications.
Q & A
- What is the maximum collector to emitter voltage of the FGH15T120SMD-F155?
The maximum collector to emitter voltage is 1200 V.
- What is the typical collector to emitter saturation voltage at 15 A?
The typical collector to emitter saturation voltage is 1.8 V at IC = 15 A and VGE = 15 V.
- What are the operating junction temperature limits for this IGBT?
The operating junction temperature range is from -55°C to +175°C.
- Is the FGH15T120SMD-F155 Pb-Free and RoHS compliant?
Yes, it is Pb-Free and RoHS compliant.
- What are some typical applications for this IGBT?
Typical applications include solar inverters, UPS, welders, and PFC applications.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 333 W.
- What is the thermal resistance from junction to case for the IGBT?
The thermal resistance from junction to case is 0.45 °C/W.
- What is the gate to emitter threshold voltage range?
The gate to emitter threshold voltage range is from 4.9 V to 7.5 V.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 300 °C for 5 seconds.
- What is the typical turn-on delay time at 25°C?
The typical turn-on delay time at 25°C is 32 ns under specified test conditions.
