Overview
The FGH25T120SMD-F155 is a high-performance Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) produced by ON Semiconductor. This device is designed to offer optimum performance for hard switching applications, leveraging innovative field stop trench technology. It is particularly suited for use in solar inverters, UPS (Uninterruptible Power Supplies), welders, and PFC (Power Factor Correction) applications. The IGBT features a collector-emitter voltage rating of 1200 V and a collector current of 25 A, making it a robust choice for high-power switching needs.
Key Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | - | - | - | 1200 | V |
| Gate to Emitter Voltage | VGES | - | - | - | ±25 | V |
| Transient Gate to Emitter Voltage | - | - | - | - | ±30 | V |
| Collector Current (TC = 25°C) | IC | - | - | - | 50 | A |
| Collector Current (TC = 100°C) | IC | - | - | - | 25 | A |
| Clamped Inductive Load Current (TC = 25°C) | ILM | VCC = 600 V, VGE = 15 V, IC = 100 A, RG = 23 Ω | - | - | 100 | A |
| Pulsed Collector Current | ICM | - | - | - | 100 | A |
| Diode Continuous Forward Current (TC = 25°C) | IF | - | - | - | 50 | A |
| Diode Continuous Forward Current (TC = 100°C) | IF | - | - | - | 25 | A |
| Diode Maximum Forward Current | IFM | - | - | - | 200 | A |
| Maximum Power Dissipation (TC = 25°C) | PD | - | - | - | 428 | W |
| Maximum Power Dissipation (TC = 100°C) | PD | - | - | - | 214 | W |
| Operating Junction Temperature | TJ | - | - | - | -55 to +175 | °C |
| Storage Temperature Range | Tstg | - | - | - | -55 to +175 | °C |
| Maximum Lead Temperature for Soldering | TL | - | - | - | 300 | °C |
| Thermal Resistance, Junction to Case (IGBT) | RθJC | - | - | - | 0.35 | °C/W |
| Thermal Resistance, Junction to Case (Diode) | RθJC | - | - | - | 1.4 | °C/W |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | - | 40 | °C/W |
Key Features
- Field Stop Trench Technology: Utilizes innovative field stop trench IGBT technology for enhanced performance.
- High Speed Switching: Designed for high-speed switching applications.
- Low Saturation Voltage: Offers a low collector-emitter saturation voltage (VCE(sat)) of 1.8 V at IC = 25 A.
- 100% ILM Testing: All parts are tested for clamped inductive load current (ILM).
- High Input Impedance: Features high input impedance.
- Rohs Compliance: The device is Pb-free and RoHS compliant.
Applications
- Solar Inverters: Suitable for use in solar inverter systems.
- UPS (Uninterruptible Power Supplies): Ideal for UPS applications requiring high reliability and performance.
- Welders: Used in welding equipment due to its high current handling capabilities.
- PFC (Power Factor Correction): Applicable in PFC circuits to improve power factor.
Q & A
- What is the collector-emitter voltage rating of the FGH25T120SMD-F155 IGBT?
The collector-emitter voltage rating is 1200 V.
- What is the maximum collector current at 25°C for this IGBT?
The maximum collector current at 25°C is 50 A.
- What is the typical saturation voltage (VCE(sat)) at IC = 25 A?
The typical saturation voltage (VCE(sat)) at IC = 25 A is 1.8 V.
- Is the FGH25T120SMD-F155 RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What are the typical applications for the FGH25T120SMD-F155 IGBT?
Typical applications include solar inverters, UPS, welders, and PFC applications.
- What is the thermal resistance from junction to case for the IGBT?
The thermal resistance from junction to case (RθJC) for the IGBT is 0.35 °C/W.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 428 W.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to +175 °C.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 300 °C.
- Does the FGH25T120SMD-F155 have an integrated anti-parallel diode?
Yes, the device includes an integrated anti-parallel diode.
