BSS138LT7G
  • Share:

onsemi BSS138LT7G

Manufacturer No:
BSS138LT7G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138LT7G is an N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) produced by onsemi. This device is part of the PowerTrench® T1 family and is designed for low voltage, low current applications. It features a compact SOT-23 surface mount package, making it suitable for a variety of portable and battery-powered devices. The BSS138LT7G is known for its low on-state resistance, rugged reliability, and fast switching performance, which are critical for efficient power management and switching applications.

Key Specifications

Parameter Unit Min Typ Max
VDS (Drain-Source Voltage) V - - 50
ID (On-State Drain Current) A - - 0.2
VGS(th) (Gate Threshold Voltage) V 0.8 1.3 1.5
RDS(on) @ VGS = 10 V 0.7 3.5 -
RDS(on) @ VGS = 4.5 V 1.0 6.0 -
Ciss (Input Capacitance) pF - 27 -
Coss (Output Capacitance) pF - 13 -
Crss (Reverse Transfer Capacitance) pF - 6 -

Key Features

  • Low on-state resistance (RDS(on)) of 3.5 Ω @ VGS = 10 V and 6.0 Ω @ VGS = 4.5 V.
  • High density cell design for extremely low RDS(on).
  • Rugged and reliable performance.
  • Compact industry standard SOT-23 surface mount package.
  • Pb-free and halogen-free, complying with RoHS standards.
  • Fast switching performance with low turn-on and turn-off delay times.

Applications

  • DC-DC converters.
  • Power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
  • Small servo motor control.
  • Power MOSFET gate drivers.
  • Other low voltage, low current switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS138LT7G?

    The maximum drain-source voltage (VDS) is 50 V.

  2. What is the typical on-state drain current (ID) of the BSS138LT7G?

    The typical on-state drain current (ID) is 0.2 A.

  3. What is the gate threshold voltage (VGS(th)) range of the BSS138LT7G?

    The gate threshold voltage (VGS(th)) range is from 0.8 V to 1.5 V.

  4. What is the on-state resistance (RDS(on)) at VGS = 10 V?

    The on-state resistance (RDS(on)) at VGS = 10 V is typically 3.5 Ω.

  5. What is the package type of the BSS138LT7G?

    The package type is SOT-23 (TO-236).

  6. Is the BSS138LT7G RoHS compliant?

    Yes, the BSS138LT7G is Pb-free and halogen-free, complying with RoHS standards.

  7. What are some typical applications of the BSS138LT7G?

    Typical applications include DC-DC converters, power management in portable devices, and small servo motor control.

  8. What is the input capacitance (Ciss) of the BSS138LT7G?

    The input capacitance (Ciss) is typically 27 pF.

  9. What are the turn-on and turn-off delay times of the BSS138LT7G?

    The turn-on delay time is typically 2.5 ns to 5 ns, and the turn-off delay time is typically 20 ns to 36 ns.

  10. Is the BSS138LT7G obsolete?

    Yes, the BSS138LT7G is listed as obsolete.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.75V, 5V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
220

Please send RFQ , we will respond immediately.

Same Series
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BSS138LT7G BSS138LT1G BSS138LT3G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.75V, 5V 5V 5V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5