BSS138LT7G
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onsemi BSS138LT7G

Manufacturer No:
BSS138LT7G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138LT7G is an N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) produced by onsemi. This device is part of the PowerTrench® T1 family and is designed for low voltage, low current applications. It features a compact SOT-23 surface mount package, making it suitable for a variety of portable and battery-powered devices. The BSS138LT7G is known for its low on-state resistance, rugged reliability, and fast switching performance, which are critical for efficient power management and switching applications.

Key Specifications

Parameter Unit Min Typ Max
VDS (Drain-Source Voltage) V - - 50
ID (On-State Drain Current) A - - 0.2
VGS(th) (Gate Threshold Voltage) V 0.8 1.3 1.5
RDS(on) @ VGS = 10 V mΩ 0.7 3.5 -
RDS(on) @ VGS = 4.5 V mΩ 1.0 6.0 -
Ciss (Input Capacitance) pF - 27 -
Coss (Output Capacitance) pF - 13 -
Crss (Reverse Transfer Capacitance) pF - 6 -

Key Features

  • Low on-state resistance (RDS(on)) of 3.5 Ω @ VGS = 10 V and 6.0 Ω @ VGS = 4.5 V.
  • High density cell design for extremely low RDS(on).
  • Rugged and reliable performance.
  • Compact industry standard SOT-23 surface mount package.
  • Pb-free and halogen-free, complying with RoHS standards.
  • Fast switching performance with low turn-on and turn-off delay times.

Applications

  • DC-DC converters.
  • Power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
  • Small servo motor control.
  • Power MOSFET gate drivers.
  • Other low voltage, low current switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS138LT7G?

    The maximum drain-source voltage (VDS) is 50 V.

  2. What is the typical on-state drain current (ID) of the BSS138LT7G?

    The typical on-state drain current (ID) is 0.2 A.

  3. What is the gate threshold voltage (VGS(th)) range of the BSS138LT7G?

    The gate threshold voltage (VGS(th)) range is from 0.8 V to 1.5 V.

  4. What is the on-state resistance (RDS(on)) at VGS = 10 V?

    The on-state resistance (RDS(on)) at VGS = 10 V is typically 3.5 Ω.

  5. What is the package type of the BSS138LT7G?

    The package type is SOT-23 (TO-236).

  6. Is the BSS138LT7G RoHS compliant?

    Yes, the BSS138LT7G is Pb-free and halogen-free, complying with RoHS standards.

  7. What are some typical applications of the BSS138LT7G?

    Typical applications include DC-DC converters, power management in portable devices, and small servo motor control.

  8. What is the input capacitance (Ciss) of the BSS138LT7G?

    The input capacitance (Ciss) is typically 27 pF.

  9. What are the turn-on and turn-off delay times of the BSS138LT7G?

    The turn-on delay time is typically 2.5 ns to 5 ns, and the turn-off delay time is typically 20 ns to 36 ns.

  10. Is the BSS138LT7G obsolete?

    Yes, the BSS138LT7G is listed as obsolete.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.75V, 5V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS138LT7G BSS138LT1G BSS138LT3G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.75V, 5V 5V 5V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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