BSS138LT1G
  • Share:

onsemi BSS138LT1G

Manufacturer No:
BSS138LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138LT1G is a single N-Channel Power MOSFET produced by onsemi, designed for low voltage applications. This MOSFET operates in enhancement mode and is packaged in a miniature SOT-23 surface mount package, which saves board space and is ideal for compact designs. It features a low threshold voltage, making it suitable for use in a variety of portable and battery-powered products. The device is also RoHS compliant, Pb-free, halogen-free, and BFR-free, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 50 Vdc
Gate-to-Source Voltage - Continuous VGS ±20 Vdc
Drain Current - Continuous ID 200 mA
Pulsed Drain Current (tp ≤ 10 μs) IDM 800 mA
Total Power Dissipation @ TA = 25°C PD 225 mW
Operating and Storage Temperature Range TJ, Tstg -55 to 150 °C
Thermal Resistance, Junction-to-Ambient RθJA 556 °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C
Threshold Voltage VGS(th) 0.85 - 1.5 V
On-Resistance @ VGS = 10 V RDS(on) 3.5 Ω

Key Features

  • Low Threshold Voltage (VGS(th): 0.85 V - 1.5 V) - Ideal for low voltage applications.
  • Miniature SOT-23 Surface Mount Package - Saves board space and is suitable for compact designs.
  • BVSS Prefix for Automotive and Other Applications - AEC-Q101 qualified and PPAP capable, meeting unique site and control change requirements.
  • Environmental Compliance - Pb-free, halogen-free, BFR-free, and RoHS compliant.

Applications

  • DC-DC Converters - Suitable for power conversion in various electronic systems.
  • Power Management in Portable and Battery-Powered Products - Ideal for use in computers, printers, PCMCIA cards, cellular and cordless telephones.

Q & A

  1. What is the maximum drain-to-source voltage of the BSS138LT1G MOSFET?

    The maximum drain-to-source voltage is 50 Vdc.

  2. What is the continuous drain current rating of the BSS138LT1G?

    The continuous drain current rating is 200 mA.

  3. What is the threshold voltage range of the BSS138LT1G?

    The threshold voltage range is 0.85 V to 1.5 V.

  4. What package type is used for the BSS138LT1G?

    The BSS138LT1G is packaged in a SOT-23 surface mount package.

  5. Is the BSS138LT1G RoHS compliant?

    Yes, the BSS138LT1G is RoHS compliant, Pb-free, halogen-free, and BFR-free.

  6. What are typical applications for the BSS138LT1G?

    Typical applications include DC-DC converters and power management in portable and battery-powered products such as computers, printers, and cellular phones.

  7. What is the maximum operating temperature range for the BSS138LT1G?

    The operating and storage temperature range is -55°C to 150°C.

  8. What is the thermal resistance, junction-to-ambient, for the BSS138LT1G?

    The thermal resistance, junction-to-ambient, is 556 °C/W.

  9. Is the BSS138LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

  10. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260 °C for 10 seconds.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.36
1,364

Please send RFQ , we will respond immediately.

Same Series
BSS138LT3G
BSS138LT3G
MOSFET N-CH 50V 200MA SOT23-3
BVSS138LT1G
BVSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
BSS138LT3
BSS138LT3
MOSFET N-CH 50V 200MA SOT23-3

Similar Products

Part Number BSS138LT1G BSS138LT3G BSS138LT7G BSS138LT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 2.75V, 5V -
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA 1.5V @ 1mA 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - -
Vgs (Max) ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 225mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8