BVSS138LT1G
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onsemi BVSS138LT1G

Manufacturer No:
BVSS138LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BVSS138LT1G is a power, N-Channel MOSFET produced by onsemi, designed for a variety of applications requiring low voltage and high efficiency. This device is packaged in a miniature SOT-23 surface mount package, making it ideal for space-constrained designs. The BVSS138LT1G is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other demanding applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS50Vdc
Gate-to-Source Voltage - ContinuousVGS±20Vdc
Drain Current - ContinuousID200mA
Pulsed Drain Current (tp ≤ 10 μs)IDM800mA
Total Power Dissipation @ TA = 25°CPD225mW
Operating and Storage Temperature RangeTJ, Tstg-55 to 150°C
Thermal Resistance, Junction-to-AmbientRθJA556°C/W
Maximum Lead Temperature for Soldering PurposesTL260°C
Gate-Source Threshold VoltageVGS(th)0.85 - 1.5Vdc
Static Drain-to-Source On-ResistancerDS(on)3.5 Ω (VGS = 2.75 Vdc, ID = 200 mA)

Key Features

  • Low Threshold Voltage: The BVSS138LT1G has a low gate-source threshold voltage (VGS(th)) of 0.85 V to 1.5 V, making it ideal for low voltage applications.
  • Miniature SOT-23 Package: The device is packaged in a small SOT-23 surface mount package, which saves board space and is suitable for compact designs.
  • ESD Protection: The device has HBM Class 0A, MM Class M1A, and CDM Class IV ESD protection.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Environmental Compliance: The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

The BVSS138LT1G is typically used in DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Q & A

  1. What is the maximum drain-to-source voltage of the BVSS138LT1G?
    The maximum drain-to-source voltage (VDSS) is 50 Vdc.
  2. What is the continuous drain current rating of the BVSS138LT1G?
    The continuous drain current (ID) is 200 mA.
  3. What is the gate-source threshold voltage range of the BVSS138LT1G?
    The gate-source threshold voltage (VGS(th)) ranges from 0.85 V to 1.5 V.
  4. Is the BVSS138LT1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  5. What is the thermal resistance of the BVSS138LT1G?
    The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W.
  6. What is the maximum lead temperature for soldering purposes?
    The maximum lead temperature for soldering purposes is 260 °C.
  7. Is the BVSS138LT1G environmentally compliant?
    Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  8. What are typical applications of the BVSS138LT1G?
    Typical applications include DC-DC converters and power management in portable and battery-powered products.
  9. What is the package type of the BVSS138LT1G?
    The device is packaged in a SOT-23 surface mount package.
  10. Does the BVSS138LT1G have ESD protection?
    Yes, it has HBM Class 0A, MM Class M1A, and CDM Class IV ESD protection.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
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MOSFET N-CH 50V 200MA SOT23-3
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BSS138LT3
BSS138LT3
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Similar Products

Part Number BVSS138LT1G BVSS138LT3G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V -
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 5V 3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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